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BSC057N08NS3GATMA1

Description
MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
CategoryDiscrete semiconductor    The transistor   
File Size585KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSC057N08NS3GATMA1 Overview

MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3

BSC057N08NS3GATMA1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-F5
Contacts8
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time26 weeks
Samacsys DescriptionMOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
Avalanche Energy Efficiency Rating (Eas)216 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage80 V
Maximum drain current (ID)16 A
Maximum drain-source on-resistance0.0057 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F5
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)400 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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BSC057N08NS3GATMA1 Related Products

BSC057N08NS3GATMA1 BSC057N08NS3 G
Description MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
Maker Infineon Infineon
Configuration SINGLE WITH BUILT-IN DIODE Single
Maximum operating temperature 150 °C + 150 C

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