BAS19-G, BAS20-G, BAS21-G
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Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
FEATURES
• Silicon epitaxial planar diode
3
• Fast switching diode in case SOT-23, especially
suited for automatic insertion
• General purpose switching applications
• High conductance
1
2
• AEC-Q101 qualified available
(part number on request)
• Base P/N-G3 - green, commercial grade
• Material categorization:
for definitions of compliance
www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS
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Models
Available
please see
MECHANICAL DATA
Case:
SOT-23
Weight:
approx. 8.1 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
BAS19-G
BAS20-G
BAS21-G
TYPE
DIFFERENTIATION
V
R
= 100 V
V
R
= 150 V
V
R
= 200 V
ORDERING CODE
BAS19-G3-08 or BAS19-G3-18
BAS20-G3-08 or BAS20-G3-18
BAS21-G3-08 or BAS21-G3-18
TYPE MARKING
A8G
A9G
AAG
CIRCUIT CONFIGURATION
Single
Single
Single
REMARKS
Tape and reel
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Continuous reverse voltage
TEST CONDITION
PART
BAS19-G
BAS20-G
BAS21-G
BAS19-G
Repetitive peak reverse voltage
Non-repetitive peak forward current
Non-repetitive peak forward surge current
DC forward current
(2)
SYMBOL
V
R
V
R
V
R
V
RRM
V
RRM
V
RRM
I
FSM
I
F(AV)
I
F
I
FRM
P
tot
VALUE
100
150
200
120
200
250
2.5
0.5
200
200
625
250
UNIT
V
V
V
V
V
V
A
mA
mA
mA
mW
BAS20-G
BAS21-G
t = 1 μs
t=1s
Maximum average forward rectified current
(1)
(av. over any 20 ms period)
Repetitive peak forward current
Power dissipation
(2)
Notes
(1)
Measured under pulse conditions; pulse time = t
0.3 ms
p
(2)
Device on fiberglass substrate, see layout on next page
Rev. 1.3, 13-Feb-18
Document Number: 83390
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BAS19-G, BAS20-G, BAS21-G
www.vishay.com
Vishay Semiconductors
TEST CONDITION
SYMBOL
R
thJA
T
j
T
stg
T
op
VALUE
430
150
-65 to +150
-55 to +150
UNIT
K/W
°C
°C
°C
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
(1)
Junction temperature
Storage temperature range
Operating temperature range
Note
(1)
Device on fiberglass substrate, see layout drawing below
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
TEST CONDITION
I
F
= 100 mA
I
F
= 200 mA
V
R
= 100 V
Leakage current
V
R
= 150 V
V
R
= 200 V
V
R
= V
Rmax.
, T
J
= 150 °C
Dynamic forward resistance
Diode capacitance
Reverse recovery time
I
F
= 10 mA
V
R
= 0, f = 1 MHz
I
F
= I
R
= 30 mA, R
L
= 100
,
i
R
= 3 mA
BAS19-G
BAS20-G
BAS21-G
PART
SYMBOL
V
F
V
F
I
R
I
R
I
R
I
R
r
f
C
D
t
rr
5
5
50
MIN.
TYP.
MAX.
1.0
1.25
100
100
100
100
UNIT
V
V
nA
nA
nA
μA
pF
ns
LAYOUT FOR R
thJA
TEST
Thickness:
Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
7.5 (0.3)
3 (0.12)
1 (0.4)
12 (0.47)
15 (0.59)
0.8 (0.03)
2 (0.8)
1 (0.4)
2 (0.8)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
Rev. 1.3, 13-Feb-18
Document Number: 83390
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BAS19-G, BAS20-G, BAS21-G
www.vishay.com
PACKAGE DIMENSIONS
in millimeters (inches):
SOT-23
Vishay Semiconductors
1.15 (0.045)
2.6 (0.102)
2.35 (0.093)
0.7 (0.028)
0.95 (0.037)
0.1 (0.004) max.
0.175 (0.007)
0.098 (0.004)
0.2 (0.008)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
0.3 (0.012)
0.45 (0.018)
1.43 (0.056)
1.20 (0.047)
0.35 (0.014)
Foot print recommendation:
2 (0.079)
1 (0.039)
0.9 (0.035)
1 (0.039)
0.9 (0.035)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
0.95 (0.037)
Rev. 1.3, 13-Feb-18
Document Number: 83390
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
0.9 (0.035)
0° t
0.5 (0.020)
o8
°
0.9 (0.035)
3.1 (0.122)
2.8 (0.110)
0.550 ref. (0.022 ref.)
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Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000
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