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ZTX555STOA

Description
Bipolar Transistors - BJT PNP High Voltage
CategoryDiscrete semiconductor    The transistor   
File Size77KB,2 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
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ZTX555STOA Overview

Bipolar Transistors - BJT PNP High Voltage

ZTX555STOA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDiodes Incorporated
Parts packaging codeTO-92
package instructionIN-LINE, R-PSIP-W3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage150 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PSIP-W3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 – MARCH 94
FEATURES
* 150 Volt V
CEO
* 1 Amp continuous current
* P
tot
= 1 Watt
ZTX554
ZTX555
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation: at T
amb
= 25°C
derate above 25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j:
T
stg
ZTX554
-140
-125
-5
-2
-1
1
5.7
E-Line
TO92 Compatible
ZTX555
-160
-150
UNIT
V
V
V
A
A
W
mW/ °C
°C
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-on Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
50
50
100
10
3-198
ZTX554
MIN.
-140
-125
-5
-0.1
-0.1
-0.3
-1
-1
300
50
50
100
10
MAX
ZTX555
MIN.
-160
-150
-5
-0.1
-0.1
-0.3
-1
-1
300
MHz
pF
MAX
V
V
V
µ
A
µ
A
µ
A
UNIT
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-120V
V
CB
=-140V
V
EB
=-4V
I
C
=-100mA, I
B
=-10mA*
I
C
=-100mA, I
B
=-10mA*
IC=-100mA, V
CE
=-10V*
I
C
=-10mA, V
CE
=-10V*
I
C
=-300mA, V
CE
=-10V*
I
C
=-50mA, V
CE
=-10V
f=100MHz
V
CB
=-10V, f=1MHz
V
V
V
Static Forward
h
FE
Current Transfer Ratio
Transition Frequency
Output Capacitance
f
T
C
obo

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Description Bipolar Transistors - BJT PNP High Voltage Bipolar Transistors - BJT PNP High Voltage Bipolar Transistors - BJT Bipolar Transistors - BJT PNP High Voltage
Maker Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Parts packaging code TO-92 TO-92 TO-92 TO-92
package instruction IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3
Contacts 3 3 3 3
Reach Compliance Code not_compliant compliant compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 1 A 1 A 1 A 1 A
Collector-emitter maximum voltage 150 V 150 V 125 V 150 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 50 50 50 50
JESD-30 code R-PSIP-W3 R-PSIP-W3 R-PSIP-W3 R-PSIP-W3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE
Polarity/channel type PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE
Terminal location SINGLE SINGLE SINGLE SINGLE
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz
Is it Rohs certified? conform to conform to - conform to
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