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BLF6G27L-50BN,118

Description
RF MOSFET Transistors BLF6G27L-50BN/ACC-6L/REEL 13
CategoryDiscrete semiconductor    The transistor   
File Size959KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BLF6G27L-50BN,118 Overview

RF MOSFET Transistors BLF6G27L-50BN/ACC-6L/REEL 13

BLF6G27L-50BN,118 Parametric

Parameter NameAttribute value
Source Url Status Check Date2013-06-14 00:00:00
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
Parts packaging codeDFM
Contacts2
Manufacturer packaging codeSOT1112A
Reach Compliance Codecompliant
Base Number Matches1
BLF6G27L-50BN
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
50 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz.
Table 1.
Typical performance
RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
2500 to 2700
I
Dq
(mA)
430
V
DS
(V)
28
P
L(AV)
(W)
3
G
p
(dB)
16.5
D
(%)
14.5
ACPR
(dBc)
47
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2500 MHz to 2700 MHz)
Internally matched for ease of use
Integrated current sense
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the 2500 MHz to
2700 MHz frequency range
Counter Problem
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