BLF7G24L-160P,112 datasheet, PDF

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BLF7G24L-160P,112: DescriptionRF MOSFET Transistors 2.35GHz 65V 18.5dB; CategoryDiscrete semiconductor The transistor; File Size1MB，14 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BLF7G24L-160P,112 Overview

RF MOSFET Transistors 2.35GHz 65V 18.5dB

BLF7G24L-160P,112 Parametric

Parameter Name	Attribute value
Source Url Status Check Date	2013-06-14 00:00:00
Brand Name	NXP Semiconductor
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	SOT
Contacts	2
Manufacturer packaging code	SOT539A
Reach Compliance Code	compliant
Base Number Matches	1

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BLF7G24L-160P;

BLF7G24LS-160P

Power LDMOS transistor

Rev. 6 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

160 W LDMOS power transistor for base station applications at frequencies from

2300 MHz to 2400 MHz.

Table 1.

Typical performance

Typical RF performance at T

case

= 25



C in a common source class-AB production test circuit.

Test signal

IS-95

[1]

(MHz)

2300 to 2400

(mA)

1200

(V)

L(AV)

(W)

(dB)

18.5



(%)

27.5

ACPR

885k

(dBc)

45.5

[1]

Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at

0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.

1.2 Features and benefits



Excellent ruggedness

High efficiency

Low R

providing excellent thermal stability

Designed for broadband operation (2300 MHz to 2400 MHz)

Lower output capacitance for improved performance in Doherty applications

Designed for low memory effects providing excellent pre-distortability

Internally matched for ease of use

Integrated ESD protection

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications



RF power amplifiers for base stations and multi carrier applications in the 2300 MHz to

2400 MHz frequency range

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