SS22 - SS215
Taiwan Semiconductor
2A, 20V - 150V Surface Mount Schottky Barrier Rectifier
FEATURES
●
●
●
●
●
Low power loss, high efficiency
Ideal for automated placement
Guard ring for over-voltage protection
High surge current capability
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
Package
Configuration
VALUE
2
20 - 150
50
UNIT
A
V
A
DO-214AA (SMB)
Single Die
APPLICATIONS
●
●
●
●
Switching mode power supply (SMPS)
Adapters
Lighting application
Converter
MECHANICAL DATA
●
●
●
●
●
●
●
●
●
Case: DO-214AA (SMB)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix “H” means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.093 g (approximately)
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3 ms
single half sine-wave superimposed on
rated load per diode
Critical rate of rise of off-state voltage
Junction temperature
Storage temperature
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
dV/dt
T
J
T
STG
- 55 to +125
SYMBOL SS22 SS23 SS24 SS25 SS26 SS29 SS210 SS215 UNIT
SS22
20
14
20
SS23
30
21
30
SS24
40
28
40
SS25
50
35
50
2
50
10000
- 55 to +150
- 55 to +150
SS26
60
42
60
SS29
90
63
90
SS210
100
70
100
SS215
150
105
150
V
V
V
A
A
V/μs
°C
°C
1
Version:L1705
SS22 - SS215
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJL
R
ӨJA
LIMIT
24
70
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
SS22
SS23
SS24
Forward voltage per diode
(1)
CONDITIONS
SYMBOL
TYP
-
MAX
0.50
UNIT
V
SS25
SS26
SS29
SS210
SS215
SS22
SS23
SS24
SS25
SS26
SS29
SS210
SS215
SS22
SS23
SS24
I
F
= 2A,T
J
= 25°C
V
F
-
-
-
-
0.70
0.85
0.95
0.40
V
V
V
V
Forward voltage per diode
(1)
I
F
= 2A,T
J
= 100°C
V
F
-
-
-
0.65
0.70
0.80
V
V
V
-
T
J
= 25°C
I
R
0.4
mA
Reverse current @ rated V
R
per
diode
(2)
SS25
SS26
SS29
SS210
SS215
SS22
SS23
SS24
-
10
mA
-
0.1
mA
Reverse current @ rated V
R
per
diode
(2)
SS25
SS26
SS29
SS210
SS215
T
J
= 100°C
I
R
-
5
mA
-
-
mA
2
Version:L1705
SS22 - SS215
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
SS22
SS23
SS24
Reverse current @ rated V
R
per
diode
(2)
CONDITIONS
SYMBOL
TYP
-
MAX
-
UNIT
mA
SS25
SS26
SS29
SS210
SS215
T
J
= 125°C
I
R
-
-
mA
-
5
mA
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
ORDERING INFORMATION
PART NO.
SS2xx
(Note 1)
PART NO.
SUFFIX
PACKING
CODE
R5
H
R4
M4
G
PACKING CODE
SUFFIX(*)
PACKAGE
SMB
SMB
SMB
PACKING
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
Note:
1. "x" defines voltage from 20V (SS22) to 150V (SS215)
*: Optional available
EXAMPLE P/N
EXAMPLE P/N
SS22HR5G
PART NO.
SS22
PART NO.
SUFFIX
H
PACKING
CODE
R5
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
3
Version:L1705
SS22 - SS215
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
3.0
AVERAGE FORWARD CURRENT (A)
Fig.2 Typical Junction Capacitance
1000
f=1.0MHz
Vsig=50mVp-p
SS25-SS215
CAPACITANCE (pF)
2.0
100
1.0
SS22-SS24
RESISTIVE OR
INDUCTIVE LOAD
SS29-SS215
SS22-SS24
SS25-SS26
0.0
30
60
90
120
150
10
0.1
1
10
100
LEAD TEMPERATURE .(
°
C)
REVERSE VOLTAGE (V)
Fig.3 Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (mA)
INSTANTANEOUS FORWARD CURRENT (A)
100
SS22-SS24
SS25-SS215
10
T
J
=125°C
10010
Fig.4 Typical Forward Characteristics
1
10
0.1
UF1DLW
SS25-SS26
T
J
=125°C
SS22-SS24
T
J
=25°C
SS29-SS210
1
0.1
T
J
=75°C
0.01
T
J
=25°C
0.001
0
20
40
60
80
100
120
140
1
0.01
SS215
0.001
0.1
0
0.3
0.4
0.2
0.5
0.4
0.6
0.6
Pulse width
PULSE WIDTH=300μs
1% DUTY CYCLE
0.7
0.8
0.9
1
1.1
0.8
1
1.2
1.4
1.6
1.2
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
4
Version:L1705
(A)
SS22 - SS215
Taiwan Semiconductor
Fig.5 Maximum Non-repetitive Forward Surge Current
PEAK FORWARD SURGE CURRENT (A)
50
8.3ms Single Half Sine Wave
40
30
20
10
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
5
Version:L1705
Embedded System
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