EEWORLDEEWORLDEEWORLD

Part Number

Search

BS250FTA

Description
MOSFET P-Chnl 45V
CategoryDiscrete semiconductor    The transistor   
File Size106KB,3 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
Download Datasheet Parametric View All

BS250FTA Online Shopping

Suppliers Part Number Price MOQ In stock  
BS250FTA - - View Buy Now

BS250FTA Overview

MOSFET P-Chnl 45V

BS250FTA Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerDiodes Incorporated
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time17 weeks
ConfigurationSINGLE
Minimum drain-source breakdown voltage45 V
Maximum drain current (Abs) (ID)0.09 A
Maximum drain current (ID)0.09 A
Maximum drain-source on-resistance14 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)0.33 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - JANUARY 1996
BS250F
D
G
S
PARTMARKING DETAIL – MX
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
-45
-90
-1.6
±
20
SOT23
UNIT
V
mA
A
V
mW
°C
330
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
SYMBOL
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
t
d(on)
t
r
t
d(off)
t
f
9
90
25
10
10
10
10
MIN. TYP. MAX. UNIT CONDITIONS.
-45
-1
-70
-3.5
-20
V
V
nA
I
D
=-100
µ
A, V
GS
=0V
I
D
=-1mA, V
DS
= V
GS
V
GS
=-15V, V
DS
=0V
V
DS
=-25V, V
GS
=0V
V
GS
=-10V,I
D
=-200mA
V
DS
=-10V,I
D
=-200mA
V
DS
=-10V, V
GS
=0V,
f=1MHz
-0.5.
µ
A
14
mS
pF
ns
ns
ns
ns
V
DD
-25V, I
D
=-200mA
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 - 55
zuanfentieqingwushan
...
lyylsc Embedded System
IO port level problem
If P1DIR=0X00 is written, then P1 is in the input direction. However, if P1OUT=0xff is written at this time, will it affect the level of P1? Will P1IN read 0xff?...
s364147694 Microcontroller MCU
Solution Competition: Who can come up with the lowest cost inductance measurement solution?
Hello everyone! Today I propose that we discuss and research together to find a low-cost inductance detection solution: Requirements: Measurement range: 500μH ~ 3mH Operating temperature range: 0 ~ 60...
jianglit Test/Measurement
0
...
happybean Embedded System
Surge protection for MOSFET DC switches
Borrow the picture in the post below for use https://bbs.eeworld.com.cn/thread-1200844-1-1.htmlThe function of C1 is to prevent surges and avoid damaging the MOSFET due to too fast a turn-on speed whe...
PowerAnts Power technology
#The best content of the "Interview with famous teachers" in the electronic competition#The first issue - Professor Hu Renjie of Southeast University
[font=微软雅黑][/font][font=微软雅黑][size=4] [b]Professor Hu Renjie[/b][/size][/font] [hr][font=微软雅黑][size=4] Hu Renjie, chief professor of Southeast University, national famous teacher of the "Ten Thousand ...
木犯001号 Electronics Design Contest

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2654  178  72  2582  2897  54  4  2  52  59 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号