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B4S-G

Description
Bridge Rectifiers MBS GPP 0.8A 400V Rect. Bridge Diode
CategoryDiscrete semiconductor    diode   
File Size98KB,4 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Environmental Compliance
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B4S-G Overview

Bridge Rectifiers MBS GPP 0.8A 400V Rect. Bridge Diode

B4S-G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerComchip Technology
package instructionR-PDSO-G4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage400 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PDSO-G4
Maximum non-repetitive peak forward current30 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage400 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
SMD Glass Passivated Bridge Rectifiers
B05S-G Thru. B10S-G
Reverse Voltage: 50 to 1000 Volts
Forward Current: 0.8 A
RoHS Device
MBS
Features
-Rating to 1000V PRV.
-Ideal for printed circuit board.
-Reliable low cost construction utilizing
molded plastic technique results in
inexpensive product.
-Pb free product.
-UL recognized file # E349301
R
0.031 (0.80)
0.019 (0.50)
-
0.165 (4.20)
0.146 (3.70)
+
~
0.014 (0.35)
0.006 (0.15)
0.106(2.70)
0.090(2.30)
0.275 (7.0) max
~
0.067(1.70)
0.051(1.30)
Mechanical data
-Polarity: Symbol molded on body.
-Weight: 0.125 grams.
-Mounting position: Any.
0.106 (2.70)
0.090 (2.30)
0.193 (4.90)
0.177 (4.50)
0.067(1.70)
0.051(1.30)
0.008(0.20)max
Dimensions in inches and (millimeter)
Maximum Rating And Electrical Characteristics
Rating at T
A
=25°C, unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current (Note 1)
Symbol B05S-G
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
B1S-G
100
70
100
B2S-G
200
140
200
B4S-G
400
280
400
0.8
B6S-G
600
420
600
B8S-G
800
560
800
B10S-G
1000
700
1000
Unit
V
V
V
A
@T
A
=40°C
Peak Forward Surge Current, 8.3mS single
half sine-wave, superimposed on rated load
(JEDEC Method)
Peak Forward Voltage at 0.8A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
per element (Note 2)
Junction to ambient
Typical Thermal Resistance
Junction to case
Operating Temperature Range
Storage Temperature Range
@T
J
=25°C
@T
J
=125°C
I
FSM
30
A
V
F
I
R
1.1
5.0
500
15
125
V
μA
C
J
R
θJA
R
θJC
T
J
T
STG
pF
°C/W
75
-55 to +150
-55 to +150
°C
°C
Notes: 1. Mounted on P.C. Board.
2. Measured at 1.0MHz and applied reverse voltage of 4V DC.
Company reserves the right to improve product design , functions and reliability without notice.
QW-BBR01
REV:E
Page 1
Comchip Technology CO., LTD.

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