BCW71
BCW71
C
E
SOT-23
Mark: K1
B
NPN General Purpose Amplifier
This device is designed for general purpose amplifier
applications at collector currents to 300 mA. Sourced from
Process 10.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CES
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Collector-Emitter Voltage
TA = 25°C unless otherwise noted
Parameter
Value
45
50
5.0
500
-55 to +150
Units
V
V
V
mA
°C
3
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
*BCW71
350
2.8
357
Units
mW
mW/°C
°C/W
*
Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997
Fairchild Semiconductor Corporation
BCW71
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
Collector-Emitter Breakdown
Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
C
= 10
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
= 20 V, I
E
= 0
V
CB
= 20 V, I
E
= 0, T
A
= 100°C
45
50
5.0
100
10
V
V
V
µA
ON CHARACTERISTICS
h
FE
V
CE(
sat
)
V
BE(
sat
)
V
BE(
on
)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
I
C
= 2.0 mA, V
CE
= 5.0 V
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 50 mA, I
B
= 2.5 mA
I
C
= 2.0 mA, V
CE
= 5.0 V
0.6
0.85
0.75
110
220
0.25
V
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
C
ibo
NF
Current Gain - Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
I
C
= 10 mA, V
CE
= 5.0 V,
f = 35 MHz
V
CE
= 10 V, I
E
= 0, f = 1.0 MHz
V
EB
= 0.5 V, I
C
= 0, f = 1.0 MHz
I
C
= 0.2 mA, V
CE
= 5.0 V,
R
S
= 2.0 kΩ, f = 1.0 kHz,
BW = 200 Hz
330
4.0
9.0
10
MHz
pF
pF
dB
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
400
Vce = 5V
125 °C
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Collector-Emitter Saturation
Voltage vs Collector Current
0.4
β
= 10
0.3
25 °C
300
25 °C
200
- 40 °C
0.2
100
0.1
125 °C
- 40 °C
0
10
20 30
50
100
200 300
I
C
- COLLECTOR CURRENT (mA)
500
1
10
100
I
C
- COLLECTOR CURRENT (mA)
400
BCW71
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
V
BESAT
- COLLECTOR-EMITTER VOLTAGE (V)
1
0.8
0.6
0.4
0.2
0.1
1
10
100
I
C
- COLLECTOR CURRENT (mA)
300
- 40 °C
V
BEON
- BASE-EMITTER ON VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
V
CE
= 5V
0.2
1
10
100
I
C
- COLLECTOR CURRENT (mA)
500
- 40 °C
25 °C
125 °C
25 °C
125 °C
β
= 10
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLE CTOR CURRENT (nA)
10
V
CB
= 60V
Input and Output Capacitance
vs Reverse Voltage
100
f = 1.0 MHz
CAPACITANCE (pF)
10
Cib
Cob
3
1
1
0.1
25
50
75
100
125
T
A
- AMBIE NT TEMPERATURE (
°
C)
150
0.1
0.1
1
10
V
ce
- COLLECTOR VOLTAGE (V)
100
Switching Times vs
Collector Current
300
270
240
210
TIME (nS)
180
150
120
90
60
30
0
10
td
tf
tr
IB1 = IB2 = Ic / 10
V
cc
= 10 V
Power Dissipation vs
Ambient Temperature
350
ts
P
D
- POWER DISSIPATION (mW)
300
250
200
150
100
50
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
SOT-23
20
30
50
100
200
I
C
- COLLECTOR CURRENT (mA)
300
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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2
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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