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BUL146FG

Description
Bipolar Transistors - BJT 6A 400V 40W NPN
CategoryDiscrete semiconductor    The transistor   
File Size216KB,11 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BUL146FG Overview

Bipolar Transistors - BJT 6A 400V 40W NPN

BUL146FG Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
Parts packaging codeTO-220AB
package instructionROHS COMPLIANT, CASE 221D-03, ISOLATED TO-220, FULL PACK-3
Contacts3
Manufacturer packaging code221D-03
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time1 week
Other featuresUL RECOGNIZED
Shell connectionISOLATED
Maximum collector current (IC)6 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)8
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)40 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)14 MHz
Base Number Matches1
BUL146G, BUL146FG
SWITCHMODEt NPN
Bipolar Power Transistor
For Switching Power Supply Applications
The BUL146G / BUL146FG have an applications specific
state−of−the−art die designed for use in fluorescent electric lamp
ballasts to 130 W and in Switchmode Power supplies for all types of
electronic equipment.
Features
http://onsemi.com
Improved Efficiency Due to Low Base Drive Requirements:
High and Flat DC Current Gain
Fast Switching
No Coil Required in Base Circuit for Turn−Off (No Current Tail)
Full Characterization at 125°C
Two Packages Choices: Standard TO−220 or Isolated TO−220
Parametric Distributions are Tight and Consistent Lot−to−Lot
BUL146F, Case 221D, is UL Recognized to 3500 V
RMS
: File # E69369
These Devices are Pb−Free and are RoHS Compliant*
Rating
Symbol
V
CEO
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
V
ISOL1
V
ISOL2
V
ISOL3
P
D
Value
400
700
9.0
6.0
15
4.0
8.0
BUL146F
4500
3500
1500
100
40
0.8
0.32
−65
to 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
V
1
W
W/_C
POWER TRANSISTOR
8.0 AMPERES
1000 VOLTS
45 and 125 WATTS
MARKING
DIAGRAMS
MAXIMUM RATINGS
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Emitter−Base Voltage
Collector Current
Base Current
Continuous
Peak (Note 1)
Continuous
Peak (Note 1)
1
2
BUL146G
AYWW
TO−220AB
CASE 221A−09
STYLE 1
3
RMS Isolation Voltage (Note 2)
(for 1 sec, R.H. < 30%, T
C
= 25_C)
BUL146FG
AYWW
TO−220 FULLPACK
CASE 221D
STYLE 2
UL RECOGNIZED
Total Device Dissipation @ T
C
= 25_C
BUL146
BUL146F
Derate above 25°C
BUL146
BUL146F
Operating and Storage Temperature
2
3
T
J
, T
stg
_C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
BUL146
BUL146F
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
Symbol
R
qJC
Max
1.25
3.125
62.5
260
Unit
_C/W
G
A
Y
WW
= Pb−Free Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
R
qJA
T
L
_C/W
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
2. Proper strike and creepage distance must be provided.
1
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Publication Order Number:
BUL146/D
©
Semiconductor Components Industries, LLC, 2010
April, 2010
Rev. 9

BUL146FG Related Products

BUL146FG BUL146G BUL146
Description Bipolar Transistors - BJT 6A 400V 40W NPN Bipolar Transistors - BJT 6A 400V 100W NPN Bipolar Transistors - BJT 6A 400V 100W NPN
Parts packaging code TO-220AB TO-220AB TO-220AB
package instruction ROHS COMPLIANT, CASE 221D-03, ISOLATED TO-220, FULL PACK-3 ROHS COMPLIANT, CASE 221A-09, 3 PIN CASE 221A-09, 3 PIN
Contacts 3 3 3
Manufacturer packaging code 221D-03 221A-09 CASE 221A-09
Reach Compliance Code not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99
Other features UL RECOGNIZED LEADFORM OPTIONS ARE AVAILABLE LEADFORM OPTIONS ARE AVAILABLE
Shell connection ISOLATED COLLECTOR COLLECTOR
Maximum collector current (IC) 6 A 6 A 6 A
Collector-emitter maximum voltage 400 V 400 V 400 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 8 8 8
JEDEC-95 code TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3 e0
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) 260 260 240
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 40 W 100 W 100 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface Tin (Sn) Tin (Sn) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 40 40 30
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 14 MHz 14 MHz 14 MHz
Base Number Matches 1 1 1
Brand Name ON Semiconductor ON Semiconductor -
Is it lead-free? Lead free Lead free -
Factory Lead Time 1 week 1 week -
Maker - ON Semiconductor ON Semiconductor
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