Type
BSC110N06NS3 G
OptiMOS
TM
3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x
R
DS(on)
product (FOM)
• Superior thermal resistance
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC
1)
for target applications
• Halogen-free according to IEC61249-2-21
Type
BSC110N06NS3 G
Product Summary
V
DS
R
DS(on),max
I
D
60
11
50
V
mW
A
Package
Marking
PG-TDSON-8
110N06NS
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=10 V,
T
C
=25 °C,
R
thJA
=50K/W
2)
Pulsed drain current
3)
Avalanche energy, single pulse
4)
Gate source voltage
1)
2)
Value
50
33
Unit
A
12
200
22
±20
mJ
V
I
D,pulse
E
AS
V
GS
T
C
=25 °C
I
D
=50 A,
R
GS
=25
W
J-STD20 and JESD22
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
4)
See figure 3 for more detailed information
See figure 13 for more detailed information
Rev.2.4
page 1
2013-05-21
BSC110N06NS3 G
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Power dissipation
Symbol Conditions
P
tot
T
C
=25 °C
T
A
=25 °C,
R
thJA
=50 K/W
2)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j
,
T
stg
Value
50
2.5
-55 ... 150
55/150/56
°C
Unit
W
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R
thJC
R
thJA
minimal footprint
6 cm² cooling area
2)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=23 µA
V
DS
=60 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=60 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
I
GSS
R
DS(on)
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=50 A
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=50 A
60
2
-
-
3
0.1
-
4
1
µA
V
-
-
-
-
-
-
2.5
62
50
K/W
-
-
-
-
25
10
10
9.0
1.3
50
100
100
11
-
-
nA
mW
W
S
Rev.2.4
page 2
2013-05-21
BSC110N06NS3 G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
5)
Values
typ.
max.
Unit
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=30 V,
V
GS
=10 V,
I
D
=50 A,
R
G,ext
=3
W
V
GS
=0 V,
V
DS
=30 V,
f
=1 MHz
-
-
-
-
-
-
-
2000
440
17
10
77
14
6
2700
590
-
-
-
-
-
pF
ns
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
V
DD
=30 V,
V
GS
=0 V
V
DD
=30 V,
I
D
=50 A,
V
GS
=0 to 10 V
-
-
-
-
-
-
-
12
6
3
8
25
5.9
20
-
-
-
-
33
-
27
nC
V
I
S
I
S,pulse
V
SD
t
rr
Q
rr
-
T
C
=25 °C
-
V
GS
=0 V,
I
F
=50 A,
T
j
=25 °C
V
R
=30 V,
I
F
=50A ,
di
F
/dt =100 A/µs
-
-
-
-
-
0.95
36
38
53
212
1.2
-
-
A
V
ns
nC
See figure 16 for gate charge parameter definition
Rev.2.4
page 3
2013-05-21
BSC110N06NS3 G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10 V
60
60
50
50
40
40
P
tot
[W]
30
I
D
[A]
0
50
100
150
200
30
20
20
10
10
0
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1
limited by on-state
resistance
1 µs
0.5
10 µs
10
2
10
0
Z
thJC
[K/W]
0.2
0.1
I
D
[A]
10
1
100 µs
0.05
10
-1
10
0
1 ms
0.02
0.01
10 ms
DC
single pulse
10
-1
10
-1
10
0
10
1
10
2
10
-2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev.2.4
page 4
2013-05-21
BSC110N06NS3 G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
200
10 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
28
26
24
22
5V
5.5 V
6V
7V
150
20
18
7V
R
DS(on)
[mW]
16
14
12
10
10 V
I
D
[A]
100
50
6V
8
6
5.5 V
4
2
0
4
0
50
100
150
200
5V
0
0
1
2
3
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
120
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
80
100
60
80
60
g
fs
[S]
150 °C
25 °C
I
D
[A]
40
40
20
20
0
0
2
4
6
8
0
0
20
40
60
80
100
120
V
GS
[V]
I
D
[A]
Rev.2.4
page 5
2013-05-21
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