BLF7G15LS-200
Power LDMOS transistor
Rev. 3 — 22 July 2011
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from
1450 MHz to 1550 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
1476 to 1511
I
Dq
(mA)
1600
V
DS
(V)
28
P
L(AV)
(W)
50
G
p
(dB)
19.5
D
(%)
29
ACPR
(dBc)
35
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier.
Carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for broadband operation (1450 MHz to 1550 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
1450 MHz to 1550 MHz frequency range
NXP Semiconductors
BLF7G15LS-200
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
1
3
2
Symbol
1
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF7G15LS-200
-
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
0.5
-
65
-
Max
65
+13
56
+150
200
Unit
V
V
A
C
C
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 50 W;
V
DS
= 28 V; I
Dq
= 1600 mA
Typ
Unit
0.30 K/W
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
GS(th)
I
DSS
BLF7G15LS-200
Conditions
V
DS
= 10 V; I
D
= 270 mA
V
GS
= 0 V; V
DS
= 28 V
Min
65
1.5
-
Typ
67
1.9
-
Max
-
2.3
4.2
Unit
V
V
A
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 2.7 mA
gate-source threshold voltage
drain leakage current
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 22 July 2011
2 of 11
NXP Semiconductors
BLF7G15LS-200
Power LDMOS transistor
Table 6.
Characteristics
…continued
T
j
= 25
C unless otherwise specified.
Symbol Parameter
I
DSX
I
GSS
g
fs
R
DS(on)
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 13.5 A
Min
42
-
17
Typ
49
-
19.3
Max
-
420
19.7
Unit
A
nA
S
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 9.45 A
0.012 0.048 0.093
7. Test information
Table 7.
Functional test information
Mode of operation: 2-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 64 DPCH; f
1
= 1473.5 MHz; f
2
= 1478.5 MHz; f
3
= 1508.5 MHz; f
4
= 1513.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 1600 mA; T
case
= 25
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol
P
L(AV)
G
p
RL
in
D
ACPR
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
P
L(AV)
= 50 W
P
L(AV)
= 50 W
P
L(AV)
= 50 W
P
L(AV)
= 50 W
Conditions
Min
-
18.3
-
27
-
Typ
50
19.5
8
29
35
Max
-
-
5.5
-
33
Unit
W
dB
dB
%
dBc
Table 8.
PAR performance
Mode of operation: 1-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 64 DPCH; f
1
= 1511 MHz; RF performance at V
DS
= 28 V; I
Dq
= 1600 mA; T
case
= 25
C;
unless otherwise specified; in a class-AB production test circuit.
Symbol
PAR
O
Parameter
output peak-to-average ratio
Conditions
P
L(AV)
= 100 W at 0.01 %
probability on CCDF
Min Typ Max Unit
4.2
4.6
-
dB
7.1 Ruggedness in class-AB operation
The BLF7G15LS-200 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 1600 mA; P
L
= 150 W (CW); f = 1476 MHz to 1511 MHz.
7.2 Impedance information
Table 9.
Typical impedance information
I
Dq
= 1600 mA; main transistor V
DS
= 28 V.
Z
S
and Z
L
defined in
Figure 1.
f
(MHz)
1410
1480
1560
Z
S
()
0.74
j1.52
0.65
j1.7
0.61
j1.74
Z
L
()
3.5
j1.7
4.0
j0.74
3.8 + j0.5
BLF7G15LS-200
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 22 July 2011
3 of 11
NXP Semiconductors
BLF7G15LS-200
Power LDMOS transistor
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
7.3 Graphs
22
(1)
014aab253
60
η
(%)
40
Gain
(dB)
16
(2)
10
20
4
0
100
200
P
L
(W)
300
0
V
DS
= 28 V; I
Dq
= 1600 mA; f = 1511 MHz.
(1) gain
(2) efficiency
Fig 2.
One-tone CW power gain and drain efficiency as function of load power;
typical values
BLF7G15LS-200
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 22 July 2011
4 of 11
NXP Semiconductors
BLF7G15LS-200
Power LDMOS transistor
22
(1)
014aab254
60
η
(%)
40
0
IMD
(dBc)
−20
014aab255
Gain
(dB)
16
(2)
(1)
(2)
−40
(3)
10
20
−60
4
0
50
100
P
L(AV)
(W)
150
0
−80
0
50
100
P
L(AV)
(W)
150
V
DS
= 28 V; I
Dq
= 1600 mA; f = 1511 MHz;
tone spacing 0.1 MHz.
(1) gain
(2) efficiency
V
DS
= 28 V; I
Dq
= 1600 mA; f = 1511 MHz;
tone spacing 0.1 MHz.
(1) IMD3
(2) IMD5
(3) IMD7
Fig 3.
Two-tone CW power gain and drain efficiency
as function of average load power;
typical values
Fig 4.
Two-tone intermodulation distortion as a
function of average load power; typical values
21
Gain
(dB)
20
(1)
014aab256
50
η
(%)
40
−15
ACPR
(dBc)
−25
014aab257
19
(2)
30
−35
18
20
17
0
50
100
P
L
(W)
10
150
−45
0
50
100
P
L
(W)
150
V
DS
= 28 V; I
Dq
= 1600 mA; f = 1511 MHz;
carrier spacing 5 MHz.
(1) gain
(2) efficiency
V
DS
= 28 V; I
Dq
= 1600 mA; f = 1511 MHz;
carrier spacing 5 MHz.
Fig 5.
2-carrier W-CDMA power gain and drain
efficiency as function of load power;
typical values
Fig 6.
2-carrier W-CDMA adjacent channel power
ratio as function of load power 5 MHz
frequency offset; typical values
BLF7G15LS-200
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 22 July 2011
5 of 11
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