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BFP 740 E6327

Description
RF Bipolar Transistors TRANS GP BJT NPN 4V 0.03A
Categorysemiconductor    Discrete semiconductor   
File Size1MB,28 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BFP 740 E6327 Overview

RF Bipolar Transistors TRANS GP BJT NPN 4V 0.03A

BFP 740 E6327 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryRF Bipolar Transistors
RoHSDetails
Transistor TypeBipolar
TechnologySiGe
Transistor PolarityNPN
Collector- Emitter Voltage VCEO Max4 V
Emitter- Base Voltage VEBO1.2 V
Continuous Collector Current0.03 A
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Mounting StyleSMD/SMT
Package / CaseSOT-343
PackagingCut Tape
PackagingReel
Collector- Base Voltage VCBO13 V
Height0.9 mm
Length2 mm
Operating Frequency42000 MHz
TypeRF Silicon Germanium
Width1.25 mm
Pd - Power Dissipation160 mW
Factory Pack Quantity3000
BFP740
Low Noise Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 1.1, 2015-01-20
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