BSZ0909NS
OptiMOS™
Power-MOSFET
Features
• Optimized for 5V driver application (Notebook, VGA, POL)
• Low FOM
SW
for High Frequency SMPS
• 100% avalanche tested
• Improved switching behaviour
• N-channel
• Very low on-resistance
R
DS(on)
@
V
GS
=4.5 V
• Excellent gate charge x
R
DS(on)
product (FOM)
• Qualified according to JEDEC
1)
for target applications
• Superior thermal resistance
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
BSZ0909NS
Package
PG-TSDSON-8
Marking
0909NS
Product Summary
V
DS
R
DS(on),max
V
GS
=10 V
V
GS
=4.5 V
I
D
34
12
15
36
PG-TSDSON-8
A
V
mW
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=4.5 V,
T
C
=25 °C
V
GS
=4.5 V,
T
C
=100 °C
V
GS
=4.5 V,
T
A
=25 °C,
R
thJA
=60 K/W
2)
Pulsed drain current
3)
Avalanche current, single pulse
4)
Avalanche energy, single pulse
Gate source voltage
1)
Value
36
23
32
21
Unit
A
9
I
D,pulse
I
AS
E
AS
V
GS
T
C
=25 °C
T
C
=25 °C
I
D
=20 A,
R
GS
=25
W
144
20
9
±20
mJ
V
J-STD20 and JESD22
Rev. 2.0
page 1
2013-05-14
BSZ0909NS
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Power dissipation
Symbol Conditions
P
tot
T
C
=25 °C
T
A
=25 °C,
R
thJA
=60 K/W
2)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j
,
T
stg
Value
25
2.1
-55 ... 150
55/150/56
°C
Unit
W
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R
thJC
R
thJA
6 cm
2
cooling area
2)
-
-
-
-
5.1
60
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=250 µA
V
DS
=34 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=34 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=16 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=12 A
V
GS
=10 V,
I
D
=20 A
Gate resistance
Transconductance
2)
34
1.2
-
-
-
0.1
-
2
1
V
µA
-
-
-
-
1.5
10
10
12.0
10.0
3.0
47
100
100
15
12.0
6.0
-
W
S
nA
mW
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=30 A
24
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
Rev. 2.0
page 2
2013-05-14
BSZ0909NS
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g
V
DD
=15 V,
I
D
=30 A,
V
GS
=0 to 10 V
V
DS
=0.1 V,
V
GS
=0 to 4.5 V
V
DD
=15 V,
V
GS
=0 V
V
DD
=15 V,
I
D
=30 A,
V
GS
=0 to 4.5 V
-
-
-
-
-
-
-
3.3
1.5
1.6
3.2
6.1
3.4
13
4.4
-
2.1
-
8.1
-
17
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=15 V,
V
GS
=10 V,
I
D
=30 A,
R
G,ext
=1.6
W
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
-
-
-
-
-
-
-
975
340
21
4.5
2.2
16
2.0
1310
450
-
-
-
-
-
ns
pF
Values
typ.
max.
Unit
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Q
g(sync)
Q
oss
-
-
5.3
8.9
-
12
nC
I
S
I
S,pulse
V
SD
-
T
C
=25 °C
-
V
GS
=0 V,
I
F
=20 A,
T
j
=25 °C
V
R
=15 V,
I
F
=I
S
,
di
F
/dt =400 A/µs
-
-
-
0.9
23
148
-
A
V
Reverse recovery charge
4)
5)
Q
rr
-
-
10
nC
See figure 13 for more detailed information
See figure 16 for gate charge parameter definition
Rev. 2.0
page 3
2013-05-14
BSZ0909NS
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
)
parameter:
V
GS
30
40
35
24
30
10V
18
25
P
tot
[W]
I
D
[A]
4.5V
20
12
15
10
6
5
0
0
40
80
120
160
0
0
40
80
120
160
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
limited by on-state
resistance
1 µs
0.5
10
2
10 µs
0.2
1
100 µs
0.1
I
D
[A]
1 ms
Z
thJC
[K/W]
0.05
0.02
0.01
10
1
DC
0.1
10
0
single pulse
10
-1
10
-1
10
0
10
1
10
2
0.01
0
0
0
0
0
0
1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 2.0
page 4
2013-05-14
BSZ0909NS
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
120
10 V
5V
4.5 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
30
100
24
3V
80
3.2 V
R
DS(on)
[mW]
18
3.5 V
4V
I
D
[A]
60
4V
12
4.5 V
5V
6V
10 V
40
3.5 V
3.2 V
6
20
3V
2.8 V
0
0
1
2
3
0
0
10
20
30
40
50
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
120
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
120
100
100
80
80
60
150 °C
g
fs
[S]
5
I
D
[A]
25 °C
60
40
40
20
20
0
0
1
2
3
4
0
0
40
80
120
V
GS
[V]
I
D
[A]
Rev. 2.0
page 5
2013-05-14
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