TO
-22
0A
B
BUK7510-100B
N-channel TrenchMOS standard level FET
Rev. 4 — 4 January 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V, 24 V and 42 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
Quick reference data
Parameter
drain-source voltage
drain current
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 3
T
mb
= 25 °C;
see
Figure 2
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C;
see
Figure 11;
see
Figure 12
[1]
Min
-
-
Typ
-
-
Max Unit
100
75
V
A
P
tot
total power dissipation
-
-
300
W
Static characteristics
R
DSon
drain-source on-state
resistance
-
8.6
10
mΩ
NXP Semiconductors
BUK7510-100B
N-channel TrenchMOS standard level FET
Quick reference data
…continued
Parameter
gate-drain charge
Conditions
V
GS
= 10 V; I
D
= 25 A;
V
DS
= 80 V; T
j
= 25 °C;
see
Figure 13
I
D
= 75 A; V
sup
≤
100 V;
R
GS
= 50
Ω;
V
GS
= 10 V;
T
j(init)
= 25 °C;
unclamped
Min
-
Typ
22
Max Unit
-
nC
Table 1.
Symbol
Q
GD
Dynamic characteristics
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
-
-
629
mJ
[1]
Continuous current is limited by package.
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base;
connected to drain
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
1 2 3
SOT78A (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK7510-100B
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78A
Type number
BUK7510-100B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 4 — 4 January 2012
2 of 13
NXP Semiconductors
BUK7510-100B
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1;
see
Figure 3
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
T
mb
= 25 °C
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
I
D
= 75 A; V
sup
≤
100 V; R
GS
= 50
Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
[1]
[2]
[1]
[2]
[2]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-
-55
-55
-
-
-
-
Max
100
100
20
110
75
75
438
300
175
175
110
75
438
629
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
mJ
T
mb
= 25 °C; pulsed; t
p
≤
10 µs;
see
Figure 3
T
mb
= 25 °C; see
Figure 2
Source-drain diode
Avalanche ruggedness
[1]
[2]
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
120
I
D
(A)
03ng70
120
P
der
(%)
80
03na19
Capped at 75 A due to package
80
40
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
© NXP B.V. 2012. All rights reserved.
BUK7510-100B
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 4 — 4 January 2012
3 of 13
NXP Semiconductors
BUK7510-100B
N-channel TrenchMOS standard level FET
10
3
I
D
(A)
10
2
Limit R
DSon
= V
DS
/ I
D
003aag933
t
p
=10
μ
s
100
μ
s
10
Capped at 75 A due to package
DC
1
1 ms
10 ms
100 ms
10
-1
1
10
10
2
V
DS
(V)
10
3
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
see
Figure 4
vertical in still air
Min
-
-
Typ
-
60
Max
0.5
-
Unit
K/W
K/W
1
Z
th(j-mb)
(K/W)
10
−1
03ng69
δ
= 0.5
0.2
0.1
0.05
10
−2
0.02
P
δ
=
t
p
T
Single Shot
10
−3
10
−6
t
p
T
t
10
−5
10
−4
10
−3
10
−2
10
−1
t
p
(s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7510-100B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 4 — 4 January 2012
4 of 13
NXP Semiconductors
BUK7510-100B
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
GS(th)
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
see
Figure 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 10
I
DSS
I
GSS
R
DSon
drain leakage current
gate leakage current
drain-source on-state
resistance
V
DS
= 100 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 100 V; V
GS
= 0 V; T
j
= 175 °C
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 10 V; I
D
= 25 A; T
j
= 175 °C;
see
Figure 11;
see
Figure 12
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 11;
see
Figure 12
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
from contact screw on mounting base to
centre of die SOT78; T
j
= 25 °C
from drain lead 6 mm from package
to centre of die; T
j
= 25 °C
L
S
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
from source lead to source bond pad;
T
j
= 25 °C
I
S
= 40 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 15
I
S
= 20 A; dI
S
/dt = -100 A/µs; V
GS
= -10 V;
V
DS
= 30 V; T
j
= 25 °C
V
DS
= 30 V; R
L
= 1.2
Ω;
V
GS
= 10 V;
R
G(ext)
= 10
Ω;
T
j
= 25 °C
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 14
I
D
= 25 A; V
DS
= 80 V; V
GS
= 10 V;
T
j
= 25 °C; see
Figure 13
-
-
-
-
-
-
-
-
-
-
-
-
-
80
18
22
5080
677
168
33
45
120
36
3.5
4.5
7.5
-
-
-
6773
812
230
-
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
Min
100
89
1
2
-
-
-
-
-
-
-
Typ
-
-
-
3
-
0.02
-
2
2
-
8.6
Max
-
-
-
4
4.4
1
500
100
100
25
10
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
Static characteristics
Source-drain diode
V
SD
t
rr
Q
r
-
-
-
0.85
69
212
1.2
-
-
V
ns
nC
BUK7510-100B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 4 — 4 January 2012
5 of 13
Embedded System
京公网安备 11010802033920号
EEWORLD
