MOSFET
2N7002-G
(N-Channel)
RoHS Device
Features
Power dissipation : 0.35W
SOT-23
0.119(3.00)
0.110(2.80)
Equivalent Circuit
0.056(1.40)
0.047(1.20)
D
D
G
S
0.083(2.10)
0.066(1.70)
0.006(0.15)
0.002(0.05)
G
S
G : Gate
S : Source
D : Drain
0.044(1.10)
0.035(0.90)
0.103(2.60)
0.086(2.20)
Maximum Ratings
(at T =25°C)
A
0.020(0.50)
0.013(0.35)
0.006(0.15)max
Parameter
Drain-Source voltage
Drain current
Power dissipation
Junction and storage temperature
Symbol
V
DS
I
D
P
D
T
J
, T
STG
Value
60
250
350
-55 ~ +150
Unit
V
mA
mW
°C
0.007(0.20)min
Dimensions in inches and (millimeter)
Electrical Characteristics
(at TA=25°C unless otherwise noted)
Parameter
Drain-Source breakdown voltage
Gate-Threshold voltage
Gate-body leakage
Zero gate voltage drain current
V
DS
=60V, V
GS
=0V, T
J
=125°C
V
GS
=10V, V
DS
=7.5V
On-state drain current
V
GS
=4.5V, V
DS
=10V
V
GS
=10V, I
D
=250mA
Drain-Source on resistance
V
GS
=4.5V, I
D
=200mA
Forward tran conductance
Diode forward voltage
Total gate charge
Gate-Source charge
Gate-Drain charge
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
V
DD
=30V, R
L
=200Ω
I
D
=100mA, V
GEN
=10V
R
G
=10Ω
V
DS
=25V, V
GS
=0V, f=1MHz
V
DS
=30V, V
GS
=10V, I
D
=250mA
V
DS
=15V, I
D
=200mA
I
S
=200mA, V
GS
=0V
g
ts
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
OSS
C
rSS
t
d(ON)
t
r
t
d(off)
r
DS(ON)
2.0
300
0.85
0.6
0.06
0.06
25
6
1.2
7.5
6
7.5
20
REV:B
Conditions
V
GS
=0V, I
D
=10μA
V
DS
=V
GS
, I
D
=250μA
V
DS
=0V, V
GS
=15V
V
DS
=60V, V
GS
=0V
Symbol
V
(BR)DSS
V
th(GS)
I
GSS
I
DSS
Min
60
1
Typ
70
Max
Unit
V
1.5
2.5
10
1
μA
nA
500
800
I
D(ON)
500
700
1.5
3
4
mS
1.2
1.0
nC
V
Ω
1300
mA
pF
20
nS
QW-BTR12
Page 1
Comchip Technology CO., LTD.
MOSFET
RATING AND CHARACTERISTIC CURVES (2N7002-G)
Fig.1 On-Region Characteristics
1.0
V
GS
=10V
9.0V
8.0V
7.0V
6.5V
6.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0/1.0V
Fig.2 On-Resistance vs Drain Current
7
O
T
J
= 25C
I
D
, Drain-Source Current (A)
0.8
R
DS(ON)
, Normalized
Drain-Source On-Resistance
6
V
GS
= 5.0V
5
4
3
2
1
0
V
GS
= 10V
0.6
5.5V
5.0V
0.4
0.2
0
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1.0
V
DS
, Drain-Source Voltage(V)
I
D
, Drain Current (A)
Fig.3 On-Resistance vs Junction Temperature
2.0
6
Fig.4 On-Resistance vs Gate-Source Voltage
R
DS(ON)
, Normalized Drain-Source
On-Resistance
R
DS(ON)
, Normalized
Drain-Source On-Resistance
5
1.5
V
GS
=10V, I
D
=0.5A
4
I
D
= 500mA
V
GS
=5V, I
D
=0.05A
1.0
3
I
D
= 50mA
2
0.5
1
0
-55
0
-30
-5
20
45
70
95
O
120
145
0
2
4
6
8
10
12
14
16
18
T
J
, Junction Temperature ( C)
V
GS
, Gate to Source Voltage (V)
REV:B
QW-BTR12
Page 2
Comchip Technology CO., LTD.
MOSFET
Reel Taping Specification
P
0
P
1
d
Index hole
E
T
F
B
P
A
W
C
12
0
o
D
2
D
1
D
W
1
Trailer
.......
.......
10 pitches (min)
Device
.......
.......
.......
.......
Leader
.......
.......
10 pitches (min)
End
Start
Direction of Feed
SYMBOL
A
3.10
±
0.10
0.122
±
0.004
B
2.85
±
0.10
0.112
±
0.004
C
1.40
±
0.10
0.055
±
0.004
d
1.55
±
0.10
0.061
±
0.004
D
178
±
1
7.008
±
0.04
D
1
50.0 MIN.
1.969 MIN.
D
2
13.0
±
0.20
0.512
±
0.008
SOT-23
(mm)
(inch)
SYMBOL
E
1.75
±
0.10
0.069
±
0.004
F
3.50
±
0.05
0.138
±
0.002
P
4.00
±
0.10
0.157
±
0.004
P
0
4.00
±
0.10
0.157
±
0.004
P
1
2.00
±
0.05
0.079
±
0.002
W
8.00
±
0.30
0.315
±
0.012
W
1
14.4 MAX.
0.567 MAX.
SOT-23
(mm)
(inch)
REV:B
QW-BTR12
Page 3
Comchip Technology CO., LTD.
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