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ZVN4306AVSTOB

Description
MOSFET Avalanche
Categorysemiconductor    Discrete semiconductor   
File Size184KB,4 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
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ZVN4306AVSTOB Overview

MOSFET Avalanche

ZVN4306AVSTOB Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerDiodes Incorporated
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-92-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current1.1 A
Rds On - Drain-Source Resistance450 mOhms
Vgs - Gate-Source Voltage20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Pd - Power Dissipation850 mW
Channel ModeEnhancement
PackagingBulk
ProductMOSFET Small Signal
Transistor Type1 N-Channel
TypeFET
Fall Time25 ns
Rise Time25 ns
Factory Pack Quantity4000
Typical Turn-Off Delay Time30 ns
Typical Turn-On Delay Time8 ns
Unit Weight0.016000 oz
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 – FEBRUARY 95
FEATURES
* 60 Volt V
DS
* R
DS(on)
= 0.33Ω
* Repetitive Avalanche Rating
APPLICATIONS
* Solenoids / relay drivers for automotive
* Stepper Motor Drivers
* DC-DC convertors
ZVN4306AV
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Practical Continuous Drain Current at
T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Practical Power Dissipation at T
amb
=25°C*
Avalanche Current-Repetitive
Avalanche Energy-Repetitive
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DP
I
DM
V
GS
P
tot
P
totp
I
AR
E
AR
T
j
:T
stg
VALUE
60
1.1
1.3
15
±
20
850
1.13
1
25
-55 to +150
UNIT
V
A
A
A
V
mW
W
A
mJ
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B.
with copper equal to 1 inch square minimum

ZVN4306AVSTOB Related Products

ZVN4306AVSTOB ZVN4306AVSTOA
Description MOSFET Avalanche MOSFET Avalanche
Product Attribute Attribute Value Attribute Value
Manufacturer Diodes Incorporated Diodes Incorporated
Product Category MOSFET MOSFET
RoHS Details Details
Technology Si Si
Mounting Style Through Hole Through Hole
Package / Case TO-92-3 TO-92-3
Number of Channels 1 Channel 1 Channel
Transistor Polarity N-Channel N-Channel
Vds - Drain-Source Breakdown Voltage 60 V 60 V
Id - Continuous Drain Current 1.1 A 1.1 A
Rds On - Drain-Source Resistance 450 mOhms 450 mOhms
Vgs - Gate-Source Voltage 20 V 20 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Configuration Single Single
Pd - Power Dissipation 850 mW 850 mW
Channel Mode Enhancement Enhancement
Packaging Bulk Bulk
Product MOSFET Small Signal MOSFET Small Signal
Transistor Type 1 N-Channel 1 N-Channel
Type FET FET
Fall Time 25 ns 25 ns
Rise Time 25 ns 25 ns
Factory Pack Quantity 4000 2000
Typical Turn-Off Delay Time 30 ns 30 ns
Typical Turn-On Delay Time 8 ns 8 ns
Unit Weight 0.016000 oz 0.016000 oz

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