Rev. 1.4
256K X 16 BIT HIGH SPEED CMOS SRAM
AS7C34098A-8TIN
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Description
Initial Issue
“CE#
≧
V
CC
- 0.2V” revised as ”CE#
≦
0.2V” for
TEST CONDITION
of Average Operating Power supply Current
Icc1 on page3
Revised V
IH(max)
/V
IL(min)
in
Issue Date
Jul.12.2012
Jul.19.2012
Rev. 1.2
May.7.2013
DC ELECTRICAL CHARACTERISTICS
Added in t
BA
/t
BHZ*
/t
BLZ*
in
AC ELECTRICAL CHARACTERISTICS
Added
WRITE CYCLE 3
in
TIMING WAVEFORMS
1. Revise “TEST
CONDITION”
for V
OH
, V
OL
on page 5
I
OH
= -8mA revised as -4mA
I
OL
=4mA revised as 8mA
2. Revise V
IH(max)
& V
IL(min)
note on page 5
V
IH(max)
= V
CC
+ 2.0V for pulse width less than 6ns.
V
IL(min)
= V
SS
- 2.0V for pulse width less than 6ns.
Revised the address pin sequence of TSOP-II pin configuration on
page 3 in order to be compatible with industry convention. (No
function specifications and applications have been changed and all
the characteristics are kept all the same as Rev 1.3 )
Added t
BW
in
AC ELECTRICAL CHARACTERISTICS
Revised
WRITE CYCLE 1,2
in
TIMING WAVEFORMS
Rev. 1.3
Jun.04.2013
Rev. 1.4
Sep.23.2013
Alliance Memory, Inc
reserves the rights to change the specifications and products without notice.
551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
0
Rev. 1.4
256K X 16 BIT HIGH SPEED CMOS SRAM
GENERAL DESCRIPTION
AS7C34098A-8TIN
FEATURES
Fast access time : 8ns
Low power consumption:
Operating current:
50mA(TYP.)
Standby current:
2mA(TYP.)
Single 3.3V power supply
All inputs and outputs TTL compatible
Fully static operation
Industrial temperature -40°~85
℃
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 1.5V (MIN.)
Greenpackage/ROHS compliant (N)
Package : 44-pin 400 mil TSOP-II
The AS7C34098A is a 4,194,304-bit high speed
CMOS static random access memory organized as
262144 words by 16 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The AS7C34098A operates from a single power
supply of 3.3V and all inputs and outputs are fully
TTL compatible
PRODUCT FAMILY
Product
Family
AS7C34098A(I)
Operating
Temperature
-40°~85℃
Vcc Range
3.0 ~ 3.6V
Speed
8ns
Power Dissipation
Standby(I
SB1,
TYP.) Operating(I
CC1
,TYP.)
2mA
50mA
Alliance Memory, Inc
reserves the rights to change the specifications and products without notice.
551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
1
Rev. 1.4
256K X 16 BIT HIGH SPEED CMOS SRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Power Supply
Ground
No Connection
AS7C34098A-8TIN
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
A0 - A17
DQ0 – D15
256Kx16
MEMORY ARRAY
A0-A17
DECODER
CE#
WE#
OE#
LB#
UB#
V
CC
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
I/O DATA
CIRCUIT
V
SS
COLUMN I/O
NC
CE#
WE#
OE#
LB#
UB#
CONTROL
CIRCUIT
Alliance Memory, Inc
reserves the rights to change the specifications and products without notice.
551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
2
Rev. 1.4
256K X 16 BIT HIGH SPEED CMOS SRAM
AS7C34098A-8TIN
PIN CONFIGURATION
A0
A1
A2
A3
A4
CE#
DQ0
DQ1
DQ2
DQ3
Vcc
Vss
DQ4
DQ5
DQ6
DQ7
WE#
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
44
43
42
41
40
39
38
A17
A16
A15
OE#
UB#
LB#
DQ15
DQ14
DQ13
DQ12
Vss
Vcc
DQ11
DQ10
DQ9
DQ8
NC
A14
A13
A12
A11
A10
AS7C34098A
XXXXX
XXXXX
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
TSOP II(Top View)
Alliance Memory, Inc
reserves the rights to change the specifications and products without notice.
551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
3
Rev. 1.4
256K X 16 BIT HIGH SPEED CMOS SRAM
AS7C34098A-8TIN
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 4.6
-0.5 to V
CC
+0.5
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE#
H
L
L
L
L
L
L
L
L
OE#
X
H
X
L
L
L
X
X
X
WE# LB#
X
H
X
H
H
H
L
L
L
X
X
H
L
H
L
L
H
L
UB#
X
X
H
H
L
L
H
L
L
I/O OPERATION
DQ0-DQ7
DQ8-DQ15
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
D
OUT
High – Z
High – Z
D
OUT
D
OUT
D
OUT
D
IN
High – Z
High – Z
D
IN
D
IN
D
IN
SUPPLY CURRENT
I
SB
,I
SB1
I
CC
,I
CC1
I
CC
,I
CC1
I
CC
,I
CC1
H = V
IH
, L = V
IL
, X = Don't care
Alliance Memory, Inc
reserves the rights to change the specifications and products without notice.
551 Taylor Way, Suite #1, San Carlos, CA 94070, USA
Tel: +1 650 610 6800 Fax: +1 650 620 9211
4
京公网安备 11010802033920号
EEWORLD
