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FM24C04B-G

Description
F-RAM 4Kb Serial I2C 5V FRAM
Categorystorage    storage   
File Size358KB,18 Pages
ManufacturerCypress Semiconductor
Environmental Compliance
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FM24C04B-G Overview

F-RAM 4Kb Serial I2C 5V FRAM

FM24C04B-G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeSOIC
package instructionSOP, SOP8,.25
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
JESD-30 codeR-PDSO-G8
JESD-609 codee3
length4.9 mm
memory density4096 bit
Memory IC TypeMEMORY CIRCUIT
memory width8
Mixed memory typesN/A
Humidity sensitivity level3
Number of functions1
Number of terminals8
word count512 words
character code512
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512X8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP8,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
power supply5 V
Certification statusNot Qualified
Maximum seat height1.75 mm
Maximum standby current0.00001 A
Maximum slew rate0.0004 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
width3.9 mm
Base Number Matches1
FM24C04B
4-Kbit (512 × 8) Serial (I
2
C) F-RAM
4-Kbit (512 × 8) Serial (I
2
C) F-RAM
Features
Functional Description
The FM24C04B is a 4-Kbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 151 years
while eliminating the complexities, overhead, and system-level
reliability problems caused by EEPROM and other nonvolatile
memories.
Unlike EEPROM, the FM24C04B performs write operations at
bus speed. No write delays are incurred. Data is written to the
memory array immediately after each byte is successfully
transferred to the device. The next bus cycle can commence
without the need for data polling. In addition, the product offers
substantial write endurance compared with other nonvolatile
memories. Also, F-RAM exhibits much lower power during writes
than EEPROM since write operations do not require an internally
elevated power supply voltage for write circuits. The FM24C04B
is capable of supporting 10
14
read/write cycles, or 100 million
times more write cycles than EEPROM.
These capabilities make the FM24C04B ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data logging, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of EEPROM can cause data loss. The
combination of features allows more frequent data writing with
less overhead for the system.
The FM24C04B provides substantial benefits to users of serial
(I
2
C) EEPROM as a hardware drop-in replacement. The device
specifications are AEC-Q100 qualified and guaranteed over an
industrial temperature range of –40
C
to +85
C.
For a complete list of related documentation, click
here.
4-Kbit ferroelectric random access memory (F-RAM) logically
organized as 512 × 8
14
High-endurance 100 trillion (10 ) read/writes
151-year data retention (See the
Data Retention and
Endurance
table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I
2
C)
Up to 1-MHz frequency
2
Direct hardware replacement for serial (I C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
100
A
active current at 100 kHz
4
A
(typ) standby current
Voltage operation: V
DD
= 4.5 V to 5.5 V
AEC-Q100 grade 3 qualified
Industrial temperature: –40
C
to +85
C
8-pin small outline integrated circuit (SOIC) package
Restriction of hazardous substances (RoHS) compliant
Logic Block Diagram
Counter
Address
Latch
9
512 x 8
F-RAM Array
8
SDA
Serial to Parallel
Converter
Data Latch
8
SCL
WP
A2-A1
Control Logic
Cypress Semiconductor Corporation
Document Number: 001-84446 Rev. *L
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised April 19, 2017

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