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MG1275H-XN2MM

Description
IGBT Modules 1200V 75A IGBT
CategoryDiscrete semiconductor    The transistor   
File Size1MB,5 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
Environmental Compliance
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MG1275H-XN2MM Overview

IGBT Modules 1200V 75A IGBT

MG1275H-XN2MM Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLittelfuse
Reach Compliance Codeunknown
ECCN codeEAR99
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Power Module
1200V 75A IGBT Module
MG1275H-XN2MM
Features
• High level of integration
• IGBT
3
CHIP(Trench+Field
Stop technology)
• Low saturation voltage
and positive temperature
coefficient
• Fast switching and short
tail current
• Free wheeling diodes
with fast and soft reverse
recovery
• Solderable pins for PCB
mounting
• Temperature sense
included
RoHS
Applications
• AC motor control
• Motion/servo control
• Inverter and power
supplies
Module Characteristics
(T
J
= 25°C, unless otherwise specified)
Symbol
T
J max
T
J op
T
stg
V
isol
CTI
M
d
Weight
Parameters
Max. Junction Temperature
Operating Temperature
Storage Temperature
Insulation Test Voltage
Comparative Tracking Index
Mounting Torque
Recommended (M5)
AC, t=1min
250
2.5
180
5
N·m
g
-40
-40
3000
Test Conditions
Min
Typ
Max
150
125
125
Unit
°C
°C
°C
V
Absolute Maximum Ratings
(T
J
= 25°C, unless otherwise specified)
Symbol
IGBT
V
CES
V
GES
I
C
I
CM
P
tot
Diode
V
RRM
I
F(AV)
I
FRM
I
2
t
Repetitive Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current
T
J
=25°C
T
C
=25°C
T
C
=80°C
t
p
=1ms
T
J
=125°C, t=10ms, V
R
=0V
1200
105
75
150
1150
V
A
A
A
A
2
s
Collector - Emitter Voltage
Gate - Emitter Voltage
DC Collector Current
Repetitive Peak Collector Current
Power Dissipation Per IGBT
T
C
=25°C
T
C
=80°C
t
p
=1ms
T
J
=25°C
1200
±20
105
75
150
348
V
V
A
A
A
W
Parameters
Test Conditions
Values
Unit
MG1275H-XN2MM
1
193
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16
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