BUK954R8-60E,127 datasheet, PDF

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BUK954R8-60E,127: DescriptionMOSFET BUK954R8-60E/SIL3P/STANDARD MA; Categorysemiconductor Discrete semiconductor; File Size718KB，13 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BUK954R8-60E,127 Overview

MOSFET BUK954R8-60E/SIL3P/STANDARD MA

BUK954R8-60E,127 Parametric

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	NXP
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-220-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	100 A
Rds On - Drain-Source Resistance	3.6 mOhms
Vgs th - Gate-Source Threshold Voltage	1.4 V
Vgs - Gate-Source Voltage	15 V
Qg - Gate Charge	65 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C
Configuration	Single
Pd - Power Dissipation	234 W
Channel Mode	Enhancement
Packaging	Tube
Transistor Type	1 N-Channel
Fall Time	68 ns
Rise Time	73 ns
Factory Pack Quantity	1000
Typical Turn-Off Delay Time	78 ns
Typical Turn-On Delay Time	36 ns
Unit Weight	0.063493 oz

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BUK954R8-60E

11 September 2012

N-channel TrenchMOS logic level FET

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.

This product has been designed and qualified to AEC Q101 standard for use in high

performance automotive applications.

1.2 Features and benefits

•

AEC Q101 compliant

•

Repetitive avalanche rated

•

Suitable for thermally demanding environments due to 175 °C rating

•

True logic level gate with VGS(th) rating of greater than 0.5V at 175 °C

1.3 Applications

•

12 V Automotive systems

•

Motors, lamps and solenoid control

•

Start-Stop micro-hybrid applications

•

Transmission control

•

Ultra high performance power switching

1.4 Quick reference data

Table 1.

Symbol

tot

DSon

Quick reference data

Parameter

drain-source voltage

drain current

total power dissipation

Conditions

≥ 25 °C; T

≤ 175 °C

= 5 V; T

= 25 °C;

Fig. 1

= 25 °C;

Fig. 2

= 5 V; I

= 25 A; T

= 25 °C;

Fig. 11

[1]

Min

Typ

Max

100

234

Unit

Static characteristics

drain-source on-state

resistance

gate-drain charge

4.9

mΩ

Dynamic characteristics

= 5 V; I

= 25 A; V

= 48 V;

Fig. 13; Fig. 14

[1]

Continuous current is limited by package.

20.3

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