Thyristors
4 Amp Sensitive SCRs
Sxx04xSx Series
Description
RoHS
Excellent unidirectional switches for phase control
applications such as heating and motor speed controls.
Sensitive gate SCRs are easily triggered with microAmps
of current as furnished by sense coils, proximity switches,
and microprocessors.
Features & Benefits
• RoHS compliant
• Glass – passivated
junctions
• Voltage capability up
to 600 V
• Surge capability up to
30 A
Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
4
400 or 600
50 or 200
Unit
A
V
μA
Applications
Typical applications are capacitive discharge systems for
strobe lights, nailers, staplers and gas engine ignition. Also
controls for power tools, home/brown goods and white
goods appliances.
Schematic Symbol
Additional Information
A
Datasheet
Resources
Samples
K
G
Absolute Maximum Ratings
Symbol
I
T(RMS)
I
T(AV)
I
TSM
I
2
t
di/dt
I
GM
P
G(AV)
T
stg
T
J
Parameter
RMS on-state current
Average on-state current
Test Conditions
T
C
= 95°C
T
C
= 95°C
single half cycle; f = 50Hz;
T
J
(initial) = 25°C
single half cycle; f = 60Hz;
T
J
(initial) = 25°C
t
p
= 8.3 ms
f = 60Hz ; T
J
= 110°C
T
J
= 110°C
T
J
= 110°C
Value
4
2.5
25
A
30
3.7
50
1
0.1
-40 to 150
-40 to 110
A
2
s
A/μs
A
W
°C
°C
Unit
A
A
Peak non-repetitive surge current
I
2
t Value for fusing
Critical rate of rise of on-state current
Peak gate current
Average gate power dissipation
Storage temperature range
Operating junction temperature range
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/16/18
Thyristors
4 Amp Sensitive SCRs
Electrical Characteristics —
(T
J
= 25°C, unless otherwise specified)
Symbol
I
GT
V
GT
dv/dt
V
GD
V
GRM
I
H
t
q
t
gt
Test Conditions
V
D
= 6V; R
L
= 100
Ω
V
D
= V
DRM
; R
GK
= 1kΩ
V
D
= V
DRM
; R
L
= 3.3 kΩ; T
J
= 110°C
I
GR
= 10µA
I
T
= 20mA (initial); R
GK
= 1kohm
(1)
I
G
= 2 x I
GT
; PW = 15µs; I
T
= 8A
MAX.
MAX.
TYP
.
MIN.
MIN.
MAX.
MAX.
TYP
.
3
4
50
4
Value
Sxx04xS1
50
0.8
8
0.2
6
6
Sxx04xS2
200
Unit
µA
V
V/μs
V
V
mA
μs
μs
Notes :
xx = voltage, x = package
(1) I
T
=2A; t
p
=50µs; dv/dt=5V/µs; di/dt=-10A/µs
Static Characteristics
Symbol
V
TM
I
DRM
/ I
RRM
Test Conditions
Sxx04xSy I
T
= 8A; t
p
= 380 µs
V
DRM
/ V
RRM
- R
GK
= 1kohm
T
J
= 25°C
T
J
= 110°C
MAX.
MAX.
Value
1.6
2
100
Unit
V
μA
Note : xx or z = voltage, x = package, y = sensitivity
Thermal Resistances
Symbol
R
θ(J-C)
R
θ(J-A)
Notes: xx = voltage, y = sensitivity
Parameter
Junction to case (AC)
Junction to ambient
Sxx04VSy
Sxx04DSy
Sxx04VSy
Value
3.8
3.0
85
Unit
°C/W
°C/W
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/16/18
Thyristors
4 Amp Sensitive SCRs
Figure 1: Normalized DC Gate Trigger Current
vs. Junction Temperature
4.0
Figure 2: Normalized DC Gate Trigger Voltage
vs. Junction Temperature
2.0
Ratio of I
GT
/ I
GT
(T
J
= 25°C)
3.0
2.0
1.0
0.0
-40
-15
10
35
60
85
110
Ratio of V
GT
/ V
GT
(T
J
= 25°C)
1.5
1.0
0.5
0.0
-40
-15
10
35
60
85
110
Junction Temperature (T
J
) -- (°C)
Junction Temperature (T
J
) -- (°C)
Figure 3: Normalized DC Holding Current
vs. Junction Temperature
3.0
Figure 4: Normalized DC Latching Current
vs. Junction Temperature
3.0
Ratio of I
H
/ I
H
(T
J
= 25°C)
2.5
2.5
2.0
Ratio of I
L
/ I
L
(T
J
= 25°C)
-40
-15
10
35
60
85
110
2.0
1.5
1.5
1.0
1.0
0.5
0.5
0.0
0.0
-40
-15
10
35
60
85
110
Junction Temperature (T
J
) -- (°C)
Junction Temperature (T
J
) -- (°C)
Figure 5: On-State Current vs. On-State
Voltage (Typical)
25
Figure 6: Power Dissipation (Typical)
vs. RMS On-State Current
5.5
Average On-State Power Dissipation [P
D(AV)
] - (Watts)
Instantaneous On-state Current (i
T
) – Amps
T
J
= 25°C
20
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Sxx04VSy
Sxx04DSy
15
Sxx04VSy
Sxx04DSy
10
5
0
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous On-state Voltage (v) – Volts
Note: xx or z = voltage, y = sensitivity
RMS On-State Current [I
T(RMS)
] - (Amps)
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/16/18
Thyristors
4 Amp Sensitive SCRs
Figure 7: Maximum Allowable Case Temperature
vs. RMS On-State Current
115
110
Figure 8: Maximum Allowable Case Temperature
vs. Average On-State Current
115
110
Maximum Allowable Case
Temperature (T
C
) - °C
100
95
90
85
80
75
70
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180°
Maximum Allowable Case
Temperature (T
C
) - °C
105
Sxx04VSy
Sxx04DSy
105
100
95
90
85
80
75
70
0.0
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180°
0.5
1.0
1.5
Sxx04VSy
Sxx04DSy
2.0
2.5
3.0
RMS On-State Current [I
T(RMS)
] - Amps
Average On-State Current [I
T(AVE)
] - Amps
Figure 9: Maximum Allowable Ambient Temperature
vs. RMS On-State Current
120
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180°
FREE AIR RATING
Figure 10: Maximum Allowable Ambient Temperature
vs. Average On-State Current
120
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180°
FREE AIR RATING
Maximum Allowable Ambient Temperature
(T
A
) -°C
Maximum Allowable Ambient
Temperature (T
A
) -°C
100
100
80
80
60
Sxx04VSy
40
60
Sxx04VSy
40
20
20
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0.0
0.2
0.4
0.6
0.8
RMS On-State Current [I
T(RMS)
] - Amps
Average On-State Current [I
T(AVE)
] - Amps
Figure 11: Peak Repetitive Capacitor Discharge Current
180
Figure 12: Peak Repetitive Sinusoidal Pulse Current
180
Peak Discharge Current (I
TM
) -Amps
Peak Discharge Current (I
TM
) - Amps
160
140
120
12 Hz
100
80
60
40
20
t
W
I
TRM
160
140
120
1 Hz
100
80
60
40
20
0
I
TM
1 Hz
60 Hz
12 Hz
60 Hz
t
W
0
1
10
100
1
10
100
Pulse Current Duration (t
W
) - s
Note: xx = voltage, y = sensitivity
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/16/18
Pulse Current Duration (t
W
) - s
Thyristors
4 Amp Sensitive SCRs
Figure 13-1: Typical DC Gate Trigger Current with R
GK
vs. Junction Temperature for S6004xS2
100
Figure 13-2: Typical DC Gate Trigger Current with R
GK
vs. Junction Temperature for S6004xS1
10
R
GK
=100Ω
R
GK
=10Ω
Trigger Current IG T (mA)
1
R
GK
=470Ω
R
GK
=1KΩ
0. 1
0. 01
No R
GK
0. 001
-40-
15
10
35
60
J
)
85
-- (°C)
110
Ju nc tion Te mper ature (T
Figure 14-1: Typical DC Holding Current with R
GK
vs. Junction Temperature for S6004xS2
Figure 14-2 Typical DC Holding Current with R
GK
vs. Junction Temperature for S6004xS1
Figure 15-1: Typical Static dv/dt with R
GK
vs. Junction
Temperature for S6004xS2
Figure 15-2 Typical Static dv/dt with R
GK
vs. Junction
Temperature for S6004xS1
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/16/18
京公网安备 11010802033920号
EEWORLD
