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BR24G512F-3AGTE2

Description
EEPROM I2C BUS(2-Wre) 512K SOP8 EEPROM
Categorystorage    storage   
File Size839KB,34 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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BR24G512F-3AGTE2 Overview

EEPROM I2C BUS(2-Wre) 512K SOP8 EEPROM

BR24G512F-3AGTE2 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionSOP,
Reach Compliance Codecompliant
Factory Lead Time10 weeks
Samacsys DescriptionROHM BR24G512F-3AGTE2 EEPROM Memory, 512kbit, 1.7 → 5.5 V SOP 8-Pin
Maximum clock frequency (fCLK)1 MHz
JESD-30 codeR-PDSO-G8
length5 mm
memory density524288 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals8
word count65536 words
character code64000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize64KX8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum seat height1.71 mm
Serial bus typeI2C
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width4.4 mm
Maximum write cycle time (tWC)5 ms
Datasheet
Serial EEPROM Series Standard EEPROM
I
2
C BUS EEPROM (2-Wire)
BR24G512-3A
General Description
BR24G512-3A is a serial EEPROM of I
2
C BUS Interface Method
Features
All controls available by 2 ports of serial clock (SCL)
and serial data (SDA)
Other devices than EEPROM can be connected to the
same port, saving microcontroller port
1.7V to 5.5V single power source operation most
suitable for battery use
1.7V to 5.5Vwide limit of operating voltage, possible
1MHz operation
Page Write Mode useful for initial value write at factory
shipment
Self-timed Programming Cycle
Low Current Consumption
Prevention of Write Mistake
Write (Write Protect) Function added
Prevention of Write Mistake at Low Voltage
More than 1 million write cycles
More than 40 years data retention
Noise filter built in SCL / SDA terminal
Initial delivery state FFh
Packages
W(Typ) x D(Typ)x H(Max)
DIP-T8
9.30mm x 6.50mm x 7.10mm
SOP-J8
4.90mm x 6.00mm x 1.65mm
SOP8
5.00mm x 6.20mm x 1.71mm
TSSOP-B8
3.00mm x 6.40mm x 1.20mm
Figure 1.
Page Write
Number of
Pages
Product number
128 Bytes
BR24G512-3A
BR24G512-3A
Capacity
Bit
Format
Type
BR24G512-3A
BR24G512F-3A
512Kbit
64K×8
BR24G512FJ-3A
BR24G512FVT-3A
1.7V to 5.5V
SOP-J8
TSSOP-B8
Power Supply
Voltage
Package
DIP-T8
SOP8
Product structure:Silicon monolithic integrated circuit
○This
product has no designed protection against radioactive rays
.
www.rohm.com
TSZ02201-0R2R0G100360-1-2
© 2014 ROHM Co., Ltd. All rights reserved.
1/30
24.May.2014 Rev.004
TSZ22111・14・001

BR24G512F-3AGTE2 Related Products

BR24G512F-3AGTE2 BR24G512-3A BR24G512FVT-3AGE2
Description EEPROM I2C BUS(2-Wre) 512K SOP8 EEPROM EEPROM I2C BUS(2-Wre) 512K DIP-T8 EEPROM EEPROM, 64KX8, Serial, CMOS, PDSO8, 3 X 6.40 MM, 1.20 MM HEIGHT, HALOGEN FREE, TSSOP-8
Is it Rohs certified? conform to conform to conform to
package instruction SOP, DIP, DIP8,.3 TSSOP, TSSOP8,.25
Reach Compliance Code compliant compliant compliant
Maximum clock frequency (fCLK) 1 MHz 1 MHz 1 MHz
JESD-30 code R-PDSO-G8 R-PDIP-T8 R-PDSO-G8
length 5 mm 9.3 mm 4.4 mm
memory density 524288 bit 524288 bit 524288 bit
Memory IC Type EEPROM EEPROM EEPROM
memory width 8 8 8
Number of functions 1 1 1
Number of terminals 8 8 8
word count 65536 words 65536 words 65536 words
character code 64000 64000 64000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C -40 °C
organize 64KX8 64KX8 64KX8
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code SOP DIP TSSOP
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial SERIAL SERIAL SERIAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum seat height 1.71 mm 4.21 mm 1.2 mm
Serial bus type I2C I2C I2C
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 1.7 V 1.7 V 1.7 V
surface mount YES NO YES
technology CMOS CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal form GULL WING THROUGH-HOLE GULL WING
Terminal pitch 1.27 mm 2.54 mm 0.65 mm
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 4.4 mm 7.62 mm 3 mm
Maximum write cycle time (tWC) 5 ms 5 ms 5 ms
Maker ROHM Semiconductor ROHM Semiconductor -
Factory Lead Time 10 weeks - 53 weeks 1 day
Samacsys Description ROHM BR24G512F-3AGTE2 EEPROM Memory, 512kbit, 1.7 → 5.5 V SOP 8-Pin EEPROM I2C BUS(2-Wre) 512K DIP-T8 EEPROM -
Nominal supply voltage (Vsup) 2.5 V 2.5 V -
Data retention time - minimum - 40 40
Durability - 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles
I2C control byte - 1010DDDR 1010DDDR
Encapsulate equivalent code - DIP8,.3 TSSOP8,.25
power supply - 1.8/5 V 1.8/5 V
Certification status - Not Qualified Not Qualified
Maximum standby current - 0.000003 A 0.000003 A
Maximum slew rate - 0.0045 mA 0.0045 mA
write protect - HARDWARE HARDWARE
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