TGA2576
2.5 to 6 GHz GaN HEMT Power Amplifier
Applications
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Communications
Electronic Warfare
Test Instrumentation
EMC Amplifier
Product Features
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Frequency Range: 2.5 – 6 GHz
Power: 46 dBm Psat @ Pin 26 dBm
35 % Power-added efficiency
Small Signal Gain: 25 dB
Bias: Vd = 30 V, Id = 1.4 A, Vg = -3.5 V Typical
Dimensions: 4.4 x 6.2 x 0.1 mm
Functional Block Diagram
Vg
2
RF In 1
8
Vg
7
Vd1
6
Vd2
Vd1
3
Vd2
4
5 RF Out
General Description
TriQuint’s TGA2576 is a wideband power amplifier
fabricated on TriQuint’s production-released 0.25um
GaN on SiC process. Operating from 2.5 GHz to 6 GHz,
it achieves 46 dBm saturated output power, 35% PAE
and 25 dB small signal gain.
Fully matched to 50 ohms, RoHS compliant and with
integrated DC blocking caps on both I/O ports, the
TGA2576 is ideally suited to support both commercial
and defense related opportunities.
The TGA2576 is 100% DC and RF tested on-wafer to
ensure compliance to performance specifications.
Bond Pad Configuration
Bond Pad #
1
2, 8
3, 7
4, 6
5
Symbol
RF In
Vg
Vd1
Vd2
RF Out
Ordering Information
Part No.
TGA2576
Preliminary Data Sheet: Rev -
02/21/11
-
1 of 11
-
ECCN
3A001.b.2.b
Description
2.5-6 GHz Power Amplifier
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
© 2011 TriQuint Semiconductor, Inc.
TGA2576
2.5 to 6 GHz GaN HEMT Power Amplifier
Specifications
Absolute Maximum Ratings
Parameter
Drain to Gate Voltage, Vd - Vg
Drain Voltage,Vd
Gate Voltage,Vg
Drain Current, Id
Gate Current, Ig
Power Dissipation, Pdiss
RF Input Power, CW, 50Ω,T = 25ºC
Channel Temperature, Tch
Mounting Temperature
(30 Seconds)
Storage Temperature
Recommended Operating Conditions
Parameter
Vd
Id
Id_drive (Under RF
Drive)
Vg
Rating
80 V
40 V
-10 to 0 V
4500 mA
-18 to 50 mA
84 W
28 dBm
275
o
C
320
o
C
-40 to 150
o
C
Min
Typical
30
1400
4000
-3.5
Max Units
V
mA
mA
V
Electrical specifications are measured at specified test
conditions.
Specifications are not guaranteed over all recommended
operating conditions.
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the
device at these conditions is not implied.
Electrical Specifications
Test conditions unless otherwise noted: 25 ºC, Vd = 30 V, Idq = 1400 mA, Vg = -3.5 V Typical.
Parameter
Operational Frequency Range
Small Signal Gain
Output Power @ Saturation
Power-added efficiency
Gain Temperature Coefficient
Power Temperature Coefficient
Min
2.5
Typical
25
46
35
- 0.04
- 0.013
Max
6
Units
GHz
dB
dBm
%
dB/°C
dBm/°C
Preliminary Data Sheet: Rev -
02/21/11
-
2 of 11
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
© 2011 TriQuint Semiconductor, Inc.
TGA2576
2.5 to 6 GHz GaN HEMT Power Amplifier
Specifications (cont.)
Thermal and Reliability Information
Parameter
Thermal Resistance,
θ
JC
, measured to back of package
Channel Temperature (Tch), and Median Lifetime (Tm)
Channel Temperature (Tch), and Median Lifetime (Tm)
Under RF Drive
Condition
Tbase = 85 °C
Tbase = 85 °C, Vd = 30 V, Id =
1400 mA, Pdiss = 42 W
Tbase = 85 °C, Vd = 30 V, Id =
4000 mA, Pout = 46 dBm, Pdiss =
80 W
Rating
θ
JC
= 1.47 °C/W
Tch = 147 °C
Tm = 1.0 E+8 Hours
Tch = 203 °C
Tm = 1.2 E+6 Hours
Note: Thermal model includes 37 µm thick AuSn solder, and 635 µm thick CuMo thermal spreader.
1.E+13
1.E+12
1.E+11
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
25
FET7
Median Lifetime (Hours)
50
75
100
125
150
175
200
225
250
Channel Temperature (°C)
Preliminary Data Sheet: Rev -
02/21/11
-
3 of 11
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
© 2011 TriQuint Semiconductor, Inc.
TGA2576
2.5 to 6 GHz GaN HEMT Power Amplifier
Typical Performance
Gain vs. Frequency
30
25
Vd = 30 V, Id = 1.4 A, Vg = -3.5 V, 25 °C
Reference plane is at the connectors
Return Loss vs. Frequency
0
Vd = 30 V, Id = 1.4 A, Vg = -3.5 V, 25 °C
Reference plane is at the connectors
IRL and ORL (dB)
Gain (dB)
20
15
10
5
0
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
Frequency (GHz)
-5
-10
-15
-20
IRL
ORL
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
Frequency (GHz)
Saturated Output Power vs. Frequency
Saturated Output Power (dBm)
50
49
48
47
46
45
44
43
42
2
Vd = 30 V, Idq = 1.4 A, Vg = -3.5 V, 25 °C
Pin = 26 dBm
5
4
Vd = 30 V, Idq = 1.4 A, Vg = -3.5 V, 25
o
C
Drain Current vs. Frequency
Pin = 26 dBm
Id (A)
2.5
3
3.5
4
4.5
5
5.5
6
3
2
1
0
2
2.5
3
3.5
4
4.5
5
5.5
6
Frequency (GHz)
Frequency (GHz)
PAE vs. Frequency
70
60
50
PAE (%)
Vd = 30 V, Idq = 1.4 A, Vg = -3.5 V, 25 °C
Output Power vs. Input Power
50
48
46
44
42
40
38
36
34
32
10
Vd = 30 V, Idq = 1.4 A, Vg = -3.5 V, 25 °C
Pin = 26 dBm
Output Power (dBm)
40
30
20
10
0
2
2.5
3
3.5
4
4.5
5
5.5
6
Frequency (GHz)
2.5 GHz
4.0 GHz
5.5 GHz
12
14
16
18
20
22
24
26
Input Power (dBm)
Preliminary Data Sheet: Rev -
02/21/11
-
4 of 11
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
© 2011 TriQuint Semiconductor, Inc.
TGA2576
2.5 to 6 GHz GaN HEMT Power Amplifier
Typical Performance (cont.)
Power vs. Frequency vs. Temperature
Saturated Output Power (dBm)
50
49
48
47
46
45
44
43
42
2
2.5
3
3.5
4
4.5
5
5.5
6
Frequency (GHz)
25 °C
85 °C
Vd = 30 V, Idq = 1.4 A, Vg = -3.5 V
Current vs. Frequency vs Temperature
5
4
Id (A)
Vd = 30 V, Idq = 1.4 A, Vg = -3.5 V
Pin = 26 dBm
Pin = 26 dBm
3
2
1
0
2
2.5
3
3.5
4
4.5
5
5.5
6
Frequency (GHz)
25 °C
85 °C
PAE vs. Frequency vs. Temperature
70
60
50
PAE (%)
Vd = 30 V, Idq = 1.4 A, Vg = -3.5 V
Small Signal Gain vs. Temperature
35
Vd = 34 V, Id = 1.4 A, Vg = -3.5 V
Small Signal Gain (dB)
Pin = 26 dBm
30
25
20
15
10
5
0
2
2.5
3
Pin = 10 dBm
40
30
20
10
0
2
2.5
3
3.5
4
4.5
5
5.5
6
Frequency (GHz)
25 °C
85 °C
25 °C
85 °C
3.5
4
4.5
5
5.5
6
Frequency (GHz)
Preliminary Data Sheet: Rev -
02/21/11
-
5 of 11
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
© 2011 TriQuint Semiconductor, Inc.
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