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SPI07N60C3

Description
MOSFET N-Ch 600V 7.3A I2PAK-3 CoolMOS C3
CategoryDiscrete semiconductor    The transistor   
File Size660KB,15 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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SPI07N60C3 Overview

MOSFET N-Ch 600V 7.3A I2PAK-3 CoolMOS C3

SPI07N60C3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeTO-262AA
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompliant
Factory Lead Time1 week
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)230 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)7.3 A
Maximum drain current (ID)7.3 A
Maximum drain-source on-resistance0.6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)83 W
Maximum pulsed drain current (IDM)21.9 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
SPP07N60C3
SPI07N60C3, SPA07N60C3
Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
High peak current capability
Improved transconductance
P-TO220-3-31
1
2
3
V
DS
@
T
jmax
R
DS(on)
I
D
PG-TO220FP
PG-TO262
650
0.6
7.3
PG-TO220
2
V
A
1
23
P-TO220-3-1
PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
Type
SPP07N60C3
Package
PG-TO220-3
Ordering Code
Q67040-S4400
Marking
07N60C3
07N60C3
07N60C3
SPI07N60C3
PG-TO262
Q67040-S4424
SPA07N60C3
PG-TO220FP
SP000216303
Maximum Ratings
Parameter
Symbol
Value
SPP_I
SPA
Unit
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
I
D
A
7.3
4.6
7.3
1)
4.6
1)
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
=5.5A,
V
DD
=50V
I
D puls
21.9
21.9
A
E
AS
E
AR
I
AR
230
0.5
230
0.5
mJ
Avalanche energy, repetitive
t
AR
limited by
T
jmax
2)
I
D
=7.3A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Gate source voltage static
7.3
7.3
A
V
GS
±20
±
30
±20
±
30
V
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
V
GS
P
tot
83
32
W
Operating and storage temperature
Reverse diode dv/dt
6)
Rev.
3.2
Rev. 3.3
Page 1
T
j ,
T
stg
dv/dt
-55...+150
15
°C
V/ns
2009-11-27
2018-02-13
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