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CY62168G30-45BVXIT

Description
SRAM Micropower SRAMs
Categorystorage   
File Size305KB,19 Pages
ManufacturerCypress Semiconductor
Environmental Compliance
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CY62168G30-45BVXIT Overview

SRAM Micropower SRAMs

CY62168G30-45BVXIT Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerCypress Semiconductor
Product CategorySRAM
RoHSDetails
PackagingReel
Moisture SensitiveYes
Factory Pack Quantity2000
CY62168G/CY62168GE MoBL
®
16-Mbit (2M words × 8 bits) Static RAM
with Error-Correcting Code (ECC)
16-Mbit (2M words × 8 bits) Static RAM with Error-Correcting Code (ECC)
Features
Ultra-low standby power
Typical standby current: 5.5
A
Maximum standby current: 16
A
High speed: 45 ns/55 ns
Embedded error-correcting code (ECC) for single-bit error
correction
Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V
1.0 V data retention
Transistor-transistor logic (TTL) compatible inputs and outputs
ERR pin to indicate 1-bit error detection and correction
Available in Pb-free 48-ball VFBGA package
Devices with a single chip enable input are accessed by
asserting the chip enable input (CE) LOW. Dual chip enable
devices are accessed by asserting both chip enable inputs – CE
1
as LOW and CE
2
as HIGH.
Write to the device by taking Chip Enable 1 (CE
1
) LOW and
Chip Enable 2 (CE
2
) HIGH and the Write Enable (WE) input
LOW. Data on the eight I/O pins (I/O
0
through I/O
7
) is then written
into the location specified on the address pins (A
0
through A
20
).
Read from the device by taking Chip Enable 1 (CE
1
) and
Output Enable (OE) LOW and Chip Enable 2 (CE
2
) HIGH while
forcing Write Enable (WE) HIGH. Under these conditions, the
contents of the memory location specified by the address pins
will appear on the I/O pins.
The eight input and output pins (I/O
0
through I/O
7
) are placed in
a high impedance state when the device is deselected (CE
1
HIGH or CE
2
LOW), the outputs are disabled (OE HIGH), or a
write operation is in progress (CE
1
LOW and CE
2
HIGH and WE
LOW). See the
Truth Table – CY62168G/CY62168GE on page
14
for a complete description of read and write modes.
On CY62168GE devices, the detection and correction of a single
bit error in the accessed location is indicated by the assertion of
the ERR output (ERR = HIGH)
[1]
.
The CY62168G and CY62168GE devices are available in a
Pb-free 48-pin VFBGA package. The logic block diagrams are
on page 2.
For a complete list of related resources,
click here.
Functional Description
CY62168G and CY62168GE are high-performance CMOS
low-power (MoBL) SRAM devices with embedded ECC. Both
devices are offered in single and dual chip enable options and in
multiple pin configurations. The CY62168GE device includes an
error indication pin that signals a single-bit error-detection and
correction event during a read cycle.
Product Portfolio
Power Dissipation
Product
Features and Options
(see
Pin
Configurations
section)
Range
V
CC
Range (V)
Speed Operating I
CC
, (mA)
(ns)
f = f
max
Typ
[2]
Industrial
1.65 V–2.2 V
2.2 V–3.6 V
4.5 V–5.5 V
55
45
29
29
Max
32
36
Standby, I
SB2
(µA)
Typ
[2]
7
5.5
Max
26
16
CY62168G(E)18 Single or dual Chip
Enables
CY62168G(E)30
CY62168G(E)
Optional ERR pin
Notes
1. This device does not support automatic write-back on error detection.
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= 1.8 V (for V
CC
range of 1.65 V–2.2 V), V
CC
= 3 V
(for V
CC
range of 2.2 V–3.6 V), and V
CC
= 5 V (for V
CC
range of 4.5 V–5.5 V), T
A
= 25 °C.
Cypress Semiconductor Corporation
Document Number: 001-84771 Rev. *I
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised December 22, 2017

CY62168G30-45BVXIT Related Products

CY62168G30-45BVXIT
Description SRAM Micropower SRAMs
Product Attribute Attribute Value
Manufacturer Cypress Semiconductor
Product Category SRAM
RoHS Details
Packaging Reel
Moisture Sensitive Yes
Factory Pack Quantity 2000
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