RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FM4933
THRU
FM4937
SURFACE MOUNT GLASS PASSIVATED
FAST RECOVERY SILICON RECTIFIER
VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere
FEATURES
*
*
*
*
*
*
Glass passivated device
Ideal for surface mounted applications
Low leakage current
Metallurgically bonded construction
Mounting position: Any
Weight: 0.057 gram
DO-214AC
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
0.067 (1.70)
0.051 (1.29)
0.180(4.57)
0.160(4.06)
0.110 (2.79)
0.086 (2.18)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.091 (2.31)
0.067 (1.70)
0.059 (1.50)
0.035 (0.89)
0.209 (5.31)
0.185 (4.70)
0.012 (0.305)
0.006 (0.152)
0.008 (0.203)
0.004 (0.102)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
o
Maximum Average Forward Rectified Current at T
A
= 55 C
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
(Note 2) Rθ
JL
(Note 3) Rθ
JA
C
J
T
J
, T
STG
FM4933
50
35
50
FM4934
100
70
100
FM4935
200
140
200
1.0
30
30
70
15
-55 to + 150
FM4936
400
280
400
FM4937
600
420
600
UNITS
Volts
Volts
Volts
Amps
Amps
0
0
Peak Forward Surge Current I
FM
(surge): 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Thermal Resistance
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
o
Maximum Full Load Reverse Current,Full cycle Average at T
A
= 55 C
Maximum Average Reverse Current at
Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 4)
@T
A
= 25
o
C
o
@T
A
= 125 C
C/ W
C/ W
pF
0
C
SYMBOL
V
F
I
R
trr
FM4933
FM4934
FM4935
1.2
50
5.0
100
200
FM4936
FM4937
UNITS
Volts
uAmps
uAmps
uAmps
nSec
2002-10
NOTES : 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC
2. Thermal resistance junction to terminal 6.0mm
2
copper pads to each terminal.
3. Thermal resistance junction to ambient, 6.0mm
2
copper pads to each terminal.
4. Test Conditions: I
F
= 1.0A, V
R
= 30V.
RATING AND CHARACTERISTIC CURVES ( FM4933 THRU FM4937 )
INSTANTANEOUS REVERSE CURRENT, (uA)AVERAGE FORWARD CURRENT, (A)
FORWARD SURGE CURRENT, (A)
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
1.0
.8
.6
.4
.2
0
0
25
50
75 100 125 150 175
AMBIENT TEMPERATURE, ( )
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
50
40
30
20
10
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine-Wave
(JEDED Method)
0
1
2
4 6 8 10 20
40 6080 100
NUMBER OF CYCLES AT 60Hz
10
4
1.0
.4
.1
.04
INSTANTANEOUS FORWARD CURRENT, (A)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
20
10
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
TJ = 25
Pulse Width = 300us
1% Duty Cycle
TJ = 100
1.0
TJ = 25
.01
0
20 40
60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
.1
FIG. 5 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY
TIME CHARACTERISTIC
8
115Va 10K
60Hz 2W 7
6
C.P.CLARE
HPG 1002
5
4
1 AMP
SLO-BLO
FUSE
C1
1.0uF
300V
1
2 3.8uH
3 /1.4
30
50W
NON-INDUCTIVE
UNIT
UNDER TEST
1.0 Adc FROM
CONSTANT
R2
VOLTAGE SUPPLY
C1
1
RIPPLE = 3mVrms MAX
1.0uF
10W
300V
NON-
INDUCTIVE
Zout 11/2 MAX
DC to 2kHz
% CARBON CORE
FOR RECTIFIER
.01
.6
.8
1.0
1.2
1.4
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
30 Vdc
CONSTANT VOLTAGE
SUPPLY
200
100
60
40
20
10
6
4
2
1
.1
.2 .4
1.0 2 4
10 20 40
REVERSE VOLTAGE, ( V )
100
TJ = 25
MINIMIZE ALL LEAD LENGTHS
A-TEKTRONIX 545A. K PLUG IN
PRE AMP P6000 PROBE OR EQUIVALENT R2-TEN-1W 10
IN PARALLEL
R1-ADJUSTED FOR 1.4£[ BETWEEN
POINT 2 OF RELAY AND RECTIFIER
10
TA = 25
INDUCTIVE = 3.8uH
0
trr
IFM 1.0
i(t)
di/dt = 50A/uS
0
IRM (REC)
SET TIME BASE FOR
50/100 ns/cm
RECTRON
Microchip MCU
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