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BAP50-03-TP

Description
PIN Diodes 200mW 50mA, 1.1V
CategoryDiscrete semiconductor    diode   
File Size433KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
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BAP50-03-TP Overview

PIN Diodes 200mW 50mA, 1.1V

BAP50-03-TP Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicro Commercial Components (MCC)
package instructionROHS COMPLIANT, PLASTIC PACKAGE-2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Maximum diode capacitance1.11 pF
Diode component materialsSILICON
Maximum diode forward resistance5 Ω
Diode typePIN DIODE
JESD-30 codeR-PDSO-G2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.2 W
Certification statusNot Qualified
surface mountYES
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
BAP50-03
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Low diode capacitance
Low diode forward resistance
MARKING: A81
General
Purpose Pin Diodes
200mW
Maximum Ratings @ 25°C Unless Otherwise Specified
Parameter
Continuous Reverse Voltage
Forward Current
Power Dissipation(T
A
=90
o
C)
Junction and Storage temperature
Symbol
V
R
I
F
P
D
T
j,
P
stg
Limits
50
50
200
-65~+150
Unit
V
mA
mW
C
SOD-323
A
B
E
Thermal Resistance Junction to
Ambient
R
thJA
85
K/W
H
D
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol Min.
50
Continuous reverse
V
R
voltage
V
F
Forward voltage
Reverse current
I
R
C
d1
C
d2
C
d3
r
D
Diode forward resistance
Parameter
Max.
Unit
V
V
nA
pF
pF
pF
Conditions
I
R
=10µA
I
F
=50mA
V
R
=50V
V
R
=0V,f=1MHz
V
R
=1V,f=1MHz
V
R
=5V,f=1MHz
I
F
=0.5mA, f=100MHz;
Note 1
G
J
DIM
A
B
C
D
E
G
H
J
1.1
100
1.11
0.55
0.35
40
Diode capacitance
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
.090
.107
2.30
2.70
.063
.071
1.60
1.80
.045
.053
1.15
1.35
.031
.045
0.80
1.15
.010
.016
0.25
0.40
.004
.018
0.10
0.45
.004
.010
0.10
0.25
-----
.006
-----
0.15
SUGGESTED SOLDER
PAD LAYOUT
0.074"
NOTE
r
D
r
D
25
5
I
F
=1.0mA, f=100MHz;
Note 1
I
F
=10mA, f=100MHz;
Note 1
Note 1.
Guaranteed on AQL basis: inspection level S4,AQL 1.0.
0.027”
A
0.022”
Revision:
B
www.mccsemi.com
1
of
3
2011/10/08

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