ZXTP19060CZ
60V PNP medium transistor in SOT89
Summary
BV
CEO
> -60V
BV
ECO
> -7V
I
C(cont)
= 4.5A
V
CE(sat)
< -80mV @ -1A
R
CE(sat)
= 50m
P
D
= 2.4W
Complementary part number ZXTN19060CZ
Description
Packaged in the SOT89 outline this new low saturation PNP transistor
offers extremely low on state losses making it ideal for use in DC-DC
circuits and various driving and power management functions.
C
B
Features
•
•
•
•
High gain
Low saturation voltage
High peak current
7V reverse blocking voltage
E
Applications
•
•
•
High side driver
Motor drive
Load disconnect switch
E
C
C
B
Tape width
(mm)
12
Quantity
per reel
1000
Ordering information
Device
ZXTP19060CZTA
Reel size
(inches)
7
Pinout - top view
Device marking
1M2
Issue 1- February 2008
© Zetex Semiconductors plc 2008
1
www.zetex.com
ZXTP19060CZ
Absolute maximum ratings
Parameter
Collector-Base voltage
Collector-Emitter voltage
Emitter-Collector voltage (reverse blocking)
Emitter-Base voltage
Continuous Collector current
(c)
Base current
Peak pulse current
Power dissipation at T
A
=25°C
(a)
Linear derating factor
Power dissipation at T
A
=25°C
(b)
Linear derating factor
Power dissipation at T
A
=25°C
(c)
Linear derating factor
Power dissipation at T
A
=25°C
(d)
Linear derating factor
Power dissipation at T
C
=25°C
(e)
Linear derating factor
Operating and storage temperature range
T
j
, T
stg
P
D
P
D
P
D
P
D
Symbol
V
CBO
V
CEO
V
ECX
V
EBO
I
C
I
B
I
CM
P
D
Limit
-60
-60
-7
-7
-4.5
-1
-7
1.1
8.8
1.8
14.4
2.4
19.2
4.46
35.7
26.7
213
-55 to 150
Unit
V
V
V
V
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient
(a)
Junction to ambient
(b)
Junction to ambient
(c)
Junction to ambient
(d)
Junction to case
(e)
Symbol
R
R
R
R
R
JA
JA
JA
JA
JC
Limit
117
68
51
28
4.69
Unit
°C/W
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(d) As (c) above measured at t<10 seconds.
(e) Junction to case (collector tab). Typical
Issue 1- February 2008
© Zetex Semiconductors plc 2008
2
www.zetex.com
ZXTP19060CZ
Thermal characteristics
Collector Current (A)
10
CE(sat)
Max Power Dissipation (W)
V
2.4
Limited
see note (c)
2.0
see note (b)
1
DC
1s
100ms
10ms
1ms
100µs
1.6
1.2
see note (a)
100m
Single Pulse
T
amb
0.8
=25°C
0.4
-I
C
see note (c)
10m
100m
1
CE
0.0
0
20
40
60
80
100
120
140
160
10
-V
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
Issue 1- February 2008
© Zetex Semiconductors plc 2008
3
www.zetex.com
ZXTP19060CZ
Thermal characteristics
Thermal Resistance (°C/W)
120
amb
100
Maximum Power (W)
T
=25°C
Single Pulse
T
amb
100
80
60
40
20
0
100µ
see note (a)
=25°C
see note (a)
D=0.5
10
D=0.2
Single Pulse
D=0.05
D=0.1
1m
10m 100m
1
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
Thermal Resistance (°C/W)
70
60
50
40
30
20
10
0
100µ
D=0.1
D=0.2
Single Pulse
D=0.05
D=0.5
amb
100
Maximum Power (W)
T
=25°C
Single Pulse
T
amb
see note (b)
=25°C
see note (b)
10
1m
10m 100m
1
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Pulse Width (s)
Pulse Power Dissipation
Thermal Resistance (°C/W)
Maximum Power (W)
50
40
30
20
10
0
100µ
100
T
amb
=25°C
Single Pulse
T
amb
see note (c)
=25°C
see note (c)
D=0.5
10
D=0.2
Single Pulse
D=0.05
D=0.1
1m
10m 100m
1
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
Issue 1- February 2008
© Zetex Semiconductors plc 2008
4
www.zetex.com
ZXTP19060CZ
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Collector-Base breakdown
voltage
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Base breakdown
voltage
Collector-Base cut-off
current
Emitter cut-off current
Collector-Emitter
saturation voltage
Symbol
BV
CBO
BV
CEO
BV
ECX
BV
ECO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
Min.
-60
-60
-7
-7
-7
Typ.
-110
-90
-8.4
-8.8
-8.4
<1
<1
-62
-150
-500
-105
-145
-240
-965
-875
200
160
25
330
260
45
180
280
29.5
24.3
13.2
456
68.2
400
40
-50
-0.5
-50
-80
-205
-750
-165
-200
-410
-1050
-1000
500
Max.
Unit
V
V
V
V
V
nA
µA
nA
mV
mV
mV
mV
mV
mV
mV
mV
Conditions
I
C
= -100µA
I
C
= -10mA
(*)
I
E
= -100µA, R
BC
< 1kΩ or
0.25V > V
BC
> -0.25V
I
E
= -100µA
I
E
= -100µA
V
CB
= -60V
V
CB
= -60V, T
amb
=100°C
V
EB
= -5.6V
I
C
= -1A, I
B
= -100mA
(*)
I
C
= -1A, I
B
= -20mA
(*)
I
C
= -2A, I
B
= -40mA
(*)
I
C
= -2A, I
B
= -200mA
(*)
I
C
= -3A, I
B
= -300mA
(*)
I
C
= -4.5A, I
B
= -450mA
(*)
I
C
= -4.5A, I
B
= -450mA
(*)
I
C
= -4.5A, V
CE
= -2V
(*)
I
C
= -100mA, V
CE
= -2V
(*)
I
C
= -1A, V
CE
= -2V
(*)
I
C
= -4.5A, V
CE
= -2V
(*)
MHz
pF
pF
ns
ns
ns
ns
I
C
= -500mA, V
CC
= -10V,
I
B1
= -I
B2
= -50mA
I
C
= -50mA, V
CE
= -10V
f = 50MHz
V
EB
= -0.5V, f = 1MHz
(*)
V
CB
= -10V, f = 1MHz
(*)
Base-Emitter saturation
voltage
Base-Emitter turn-on
voltage
Static forward current
transfer ratio
V
BE(sat)
V
BE(on)
h
FE
Transition frequency
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
f
T
C
ibo
C
obo
t
d
t
r
t
s
t
f
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤
300µs; duty cycle
≤
2%.
Issue 1- February 2008
© Zetex Semiconductors plc 2008
5
www.zetex.com
京公网安备 11010802033920号
EEWORLD
