BC856; BC857; BC858
Rev. 7 — 16 April 2018
65 V, 100 mA PNP general-purpose transistors
Product data sheet
1
Product profile
1.1 General description
PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device
(SMD) plastic package.
Table 1. Product overview
Type number
BC856
BC856A
BC856B
BC857
BC857A
BC857B
BC857C
BC858B
Package
Nexperia
SOT23
JEDEC
TO-236AB
BC846
BC846A
BC846B
BC847
BC847A
BC847B
BC847C
BC848B
NPN complement
1.2 Features and benefits
•
Low current (max. 100 mA)
•
Low voltage (max. 65 V)
•
AEC-Q101 qualified
1.3 Applications
•
General-purpose switching and amplification
Nexperia
65 V, 100 mA PNP general-purpose transistors
BC856; BC857; BC858
1.4 Quick reference data
Table 2. Quick reference data
T
amb
= 25 °C unless otherwise specified.
Symbol
V
CEO
Parameter
collector-emitter voltage
BC856
BC857
BC858B
I
C
I
CM
h
FE
collector current
peak collector current
DC current gain
BC856
BC857
BC856A; BC857A
BC856; BC857B; BC858B
BC857C
V
CE
= -5 V; I
C
= -2 mA
125
125
125
220
420
-
-
-
-
-
475
800
250
475
800
-
-
-
-
-
Conditions
open base
-
-
-
-
-
-
-
-
-
-
-65
-45
-30
-100
-200
V
V
V
mA
mA
Min
Typ
Max
Unit
2
Pin
1
2
3
Pinning information
Symbol
B
E
C
Description
base
emitter
collector
3
Table 3. Pinning information
Simplified outline
Graphic symbol
C
B
E
1
2
sym132
BC856_BC857_BC858
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2018. All rights reserved.
Product data sheet
Rev. 7 — 16 April 2018
2 / 14
Nexperia
65 V, 100 mA PNP general-purpose transistors
BC856; BC857; BC858
3
Ordering information
Package
Name
Description
Plastic surface-mounted package; 3 leads
Version
SOT23
TO-236AB
Table 4. Ordering information
Type number
BC856
BC856A
BC856B
BC857
BC857A
BC857B
BC857C
BC858B
4
Marking
Marking code
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Table 5. Marking codes
Type number
BC856
BC856A
BC856B
BC857
BC857A
BC857B
BC857C
BC858B
[1] % = placeholder for manufacturing site code
3D%
3A%
3B%
3H%
3E%
3F%
3G%
3K%
BC856_BC857_BC858
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2018. All rights reserved.
Product data sheet
Rev. 7 — 16 April 2018
3 / 14
Nexperia
65 V, 100 mA PNP general-purpose transistors
BC856; BC857; BC858
5
Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
Parameter
collector-base voltage
BC856
BC857
BC858B
V
CEO
collector-emitter voltage
BC856
BC857
BC858B
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
amb
T
stg
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
T
amb
≤ 25 °C
[1]
Conditions
open emitter
Min
-
-
-
Max
-80
-50
-30
-65
-45
-30
-5
-100
-200
-200
250
150
150
150
Unit
V
V
V
V
V
V
V
mA
mA
mA
mW
°C
°C
°C
open base
-
-
-
open collector
-
-
-
-
-
-
-65
-65
[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.
6
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
Conditions
in free air
[1]
Table 7. Thermal characteristics
Symbol
R
th(j-a)
Min
-
Typ
-
Max
500
Unit
K/W
[1] Device mounted on an FR4 PCB; single-sided copper; tin-plated and standard footprint.
BC856_BC857_BC858
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2018. All rights reserved.
Product data sheet
Rev. 7 — 16 April 2018
4 / 14
Nexperia
65 V, 100 mA PNP general-purpose transistors
BC856; BC857; BC858
7
Characteristics
Table 8. Characteristics
T
amb
= 25 °C unless otherwise specified.
Symbol
I
CBO
I
EBO
h
FE
Parameter
collector-base
cut-off current
emitter-base
cut-off current
DC current gain
BC856
BC857
BC856A; BC857A
BC856B; BC857B;
BC858B
BC857C
V
CEsat
V
BEsat
V
BE
f
T
C
c
F
collector-emitter
saturation voltage
I
C
= -10 mA; I
B
= -0.5 mA
I
C
= -100 mA; I
B
= -5 mA
[1]
Conditions
V
CB
= -30 V; I
E
= 0
V
CB
= -30 V; I
E
= 0; T
j
= 150 °C
V
EB
= -5 V; I
C
= 0
Min
-
-
-
Typ
-1
-
-
Max
-15
-4
-100
Unit
nA
μA
nA
V
CE
= -5 V; I
C
= -2 mA
125
125
125
220
420
-
-
-
[1]
-
-
-
-
-
-75
-250
-700
-850
-650
-
-
4.5
2
475
800
250
475
800
-300
-650
-
-
-750
-820
-
-
10
mV
mV
mV
mV
mV
mV
MHz
pF
dB
base-emitter saturation I
C
= -10 mA; I
B
= -0.5 mA
voltage
I
C
= -100 mA; I
B
= -5 mA
base-emitter voltage
transition frequency
collector capacitance
noise figure
V
CE
= -5 V; I
C
= -2 mA
V
CE
= -5 V; I
C
= -10 mA
V
CE
= -5 V; I
C
= -10 mA; f = 100 MHz
V
CB
= -10 V; I
E
= i
e
= 0 A; f = 1 MHz
I
C
= -200 μA; V
CE
= -5 V; R
S
= 2 kΩ; f
= 1 kHz; B = 200Hz
-
-600
-
100
-
-
[1] pulsed; t
p
≤ 300 μs; δ ≤ 0.02
BC856_BC857_BC858
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2018. All rights reserved.
Product data sheet
Rev. 7 — 16 April 2018
5 / 14
京公网安备 11010802033920号
EEWORLD
