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2N7002TA

Description
MOSFET N Channel
CategoryDiscrete semiconductor    The transistor   
File Size137KB,4 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
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2N7002TA Overview

MOSFET N Channel

2N7002TA Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerDiodes Incorporated
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)0.115 A
Maximum drain current (ID)0.115 A
Maximum drain-source on-resistance7.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)5 pF
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.33 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
2N7002
60V SOT23 N-channel enhancement mode MOSFET
Summary
V
(BR)DSS
60
R
DS(on)
( )
7.5 @ V
GS
= 10V
7.5 @ V
GS
= 5V
I
D
(A)
0.5
0.05
Description
A small signal MOSFET for general purpose switching applications.
Features
Fast switching speed
Low gate drive capability
SOT23 package
D
G
S
Applications
General switching applications
Ordering information
S
Device
2N7002
Reel size
(inches)
7
Tape width
(mm)
8
Quantity per reel
D
3,000
Device marking
702
G
Top view
Issue 5 - October 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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