HYI18T1G160BF-3.7 datasheet, PDF

HYI18T1G160BF-3.7: Description1-Gbit Double-Data-Rate-Two SDRAM; Categorystorage storage; File Size2MB，74 Pages; ManufacturerQIMONDA; Environmental Compliance

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HYI18T1G160BF-3.7 Overview

1-Gbit Double-Data-Rate-Two SDRAM

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	QIMONDA
Parts packaging code	BGA
package instruction	TFBGA, BGA84,9X15,32
Contacts	84
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.5 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	266 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B84
length	17 mm
memory density	1073741824 bi
Memory IC Type	DDR DRAM
memory width	16
Humidity sensitivity level	3
Number of functions	1
Number of ports	1
Number of terminals	84
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	64MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA84,9X15,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	4,8
Maximum standby current	0.012 A
Maximum slew rate	0.28 mA
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
width	10 mm

July 2007

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1-Gbit Double-Data-Rate-Two SDRAM

DDR2 SDRAM

RoHS Compliant Products

Internet Data Sheet

Rev. 1.3

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