HYB18TC512160BF-3.7 datasheet, PDF

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HYB18TC512160BF-3.7: Description512-Mbit Double-Data-Rate-Two SDRAM; Categorystorage storage; File Size1MB，61 Pages; ManufacturerQIMONDA; Environmental Compliance

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HYB18TC512160BF-3.7 Overview

512-Mbit Double-Data-Rate-Two SDRAM

HYB18TC512160BF-3.7 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	QIMONDA
Parts packaging code	BGA
package instruction	TFBGA, BGA84,9X15,32
Contacts	84
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.5 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	266 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B84
length	12.5 mm
memory density	536870912 bi
Memory IC Type	DDR DRAM
memory width	16
Humidity sensitivity level	3
Number of functions	1
Number of ports	1
Number of terminals	84
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	95 °C
Minimum operating temperature
organize	32MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA84,9X15,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	4,8
Maximum standby current	0.007 A
Maximum slew rate	0.23 mA
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
width	10 mm

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September 2006

HYB18TC512160BF

HYB18TC512800BF

512-Mbit Double-Data-Rate-Two SDRAM

DDR2 SDRAM

RoHS Compliant Products

Internet Data Sheet

Rev. 1.11

HYB18TC512160BF-3.7 Related Products

	HYB18TC512160BF-3.7	HYB18TC512160BF	HYB18TC512160BF-2.5	HYB18TC512160BF-3	HYB18TC512800BF-3S	HYB18TC512800BF-3.7	HYB18TC512800BF-3	HYB18TC512800BF-5	HYB18TC512160BF-5	HYB18TC512160BF-3S
Description	512-Mbit Double-Data-Rate-Two SDRAM	512-Mbit Double-Data-Rate-Two SDRAM	512-Mbit Double-Data-Rate-Two SDRAM	512-Mbit Double-Data-Rate-Two SDRAM	512-Mbit Double-Data-Rate-Two SDRAM	512-Mbit Double-Data-Rate-Two SDRAM	512-Mbit Double-Data-Rate-Two SDRAM	512-Mbit Double-Data-Rate-Two SDRAM	512-Mbit Double-Data-Rate-Two SDRAM	512-Mbit Double-Data-Rate-Two SDRAM
Is it Rohs certified?	conform to	-	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	QIMONDA	-	QIMONDA	QIMONDA	QIMONDA	QIMONDA	QIMONDA	QIMONDA	QIMONDA	QIMONDA
Parts packaging code	BGA	-	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
package instruction	TFBGA, BGA84,9X15,32	-	TFBGA, BGA84,9X15,32	TFBGA, BGA84,9X15,32	TFBGA, BGA60,9X11,32	TFBGA, BGA60,9X11,32	TFBGA, BGA60,9X11,32	TFBGA, BGA60,9X11,32	TFBGA, BGA84,9X15,32	TFBGA, BGA84,9X15,32
Contacts	84	-	84	84	60	60	60	60	84	84
Reach Compliance Code	unknow	-	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	-	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	0.5 ns	-	0.4 ns	0.45 ns	0.45 ns	0.5 ns	0.45 ns	0.6 ns	0.6 ns	0.45 ns
Other features	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	266 MHz	-	400 MHz	333 MHz	333 MHz	266 MHz	333 MHz	200 MHz	200 MHz	333 MHz
I/O type	COMMON	-	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	4,8	-	4,8	4,8	4,8	4,8	4,8	4,8	4,8	4,8
JESD-30 code	R-PBGA-B84	-	R-PBGA-B84	R-PBGA-B84	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B84	R-PBGA-B84
length	12.5 mm	-	12.5 mm	12.5 mm	10.5 mm	10.5 mm	10.5 mm	10.5 mm	12.5 mm	12.5 mm
memory density	536870912 bi	-	536870912 bi	536870912 bi	536870912 bi	536870912 bi	536870912 bi	536870912 bi	536870912 bi	536870912 bi
Memory IC Type	DDR DRAM	-	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	16	-	16	16	8	8	8	8	16	16
Humidity sensitivity level	3	-	3	3	3	3	3	3	3	3
Number of functions	1	-	1	1	1	1	1	1	1	1
Number of ports	1	-	1	1	1	1	1	1	1	1
Number of terminals	84	-	84	84	60	60	60	60	84	84
word count	33554432 words	-	33554432 words	33554432 words	67108864 words	67108864 words	67108864 words	67108864 words	33554432 words	33554432 words
character code	32000000	-	32000000	32000000	64000000	64000000	64000000	64000000	32000000	32000000
Operating mode	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	95 °C	-	95 °C	95 °C	95 °C	95 °C	95 °C	95 °C	95 °C	95 °C
organize	32MX16	-	32MX16	32MX16	64MX8	64MX8	64MX8	64MX8	32MX16	32MX16
Output characteristics	3-STATE	-	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	-	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA
Encapsulate equivalent code	BGA84,9X15,32	-	BGA84,9X15,32	BGA84,9X15,32	BGA60,9X11,32	BGA60,9X11,32	BGA60,9X11,32	BGA60,9X11,32	BGA84,9X15,32	BGA84,9X15,32
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	-	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260	-	260	260	260	260	260	260	260	260
power supply	1.8 V	-	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	-	8192	8192	8192	8192	8192	8192	8192	8192
Maximum seat height	1.2 mm	-	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
self refresh	YES	-	YES	YES	YES	YES	YES	YES	YES	YES
Continuous burst length	4,8	-	4,8	4,8	4,8	4,8	4,8	4,8	4,8	4,8
Maximum standby current	0.007 A	-	0.007 A	0.007 A	0.007 A	0.007 A	0.007 A	0.007 A	0.007 A	0.007 A
Maximum slew rate	0.23 mA	-	0.255 mA	0.17 mA	0.152 mA	0.145 mA	0.13 mA	0.141 mA	0.22 mA	0.24 mA
Maximum supply voltage (Vsup)	1.9 V	-	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V
Minimum supply voltage (Vsup)	1.7 V	-	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
Nominal supply voltage (Vsup)	1.8 V	-	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
surface mount	YES	-	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	-	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	OTHER	-	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER
Terminal form	BALL	-	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	-	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	40	-	40	40	40	40	40	40	40	40
width	10 mm	-	10 mm	10 mm	10 mm	10 mm	10 mm	10 mm	10 mm	10 mm

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