commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
Product Summary
CH
N
P
BV
DSS
(V)
30
-30
R
DS(ON)
(mΩ)
40
70
I
D
(A)
4.3
-3.3
Pin Assignments
N1G
N1D/P1D
N1S/N2S
N2G
1
2
3
4
8
7
6
5
Pin Descriptions
P1G
P1S/P2S
N2D/P2D
P2G
Pin Name
N1G
N1D/P1D
N1S/N2S
N2G
P2G
N2D/P2D
P1S/P2S
P1G
X
Packing
Description
Gate (NMOS1)
Drain(NMOS1) / Drain(PMOS1)
Source(NMOS1) / Source(NMOS2)
Gate (NMOS2)
Gate (PMOS2)
Drain(NMOS2) / Drain(PMOS2)
Source(PMOS1) / Source(PMOS2)
Gate (PMOS1)
SO-8
Ordering information
A X
Feature
F :MOSFET
PN
9902M X
Package
S: SO-8
Blank : Tube or Bulk
A : Tape & Reel
Block Diagram
P1S
P1G
P1N1D
N1G
N1S
N2S
P2N2D
N2G
P2S
P2G
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Sep 22, 2005
1/8
AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Note 1)
Pulsed Drain Current
(Note 2)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
N-Channel P-Channel
30
-30
±12
±12
T
A
=25ºC
4.3
-3.3
T
A
=70ºC
3.4
-2.6
20
-20
T
A
=25ºC
1.38
0.01
-55 to 150
-55 to 150
Units
V
A
A
W
W/ºC
ºC
ºC
Thermal Data
Symbol
R
θJA
Parameter
Thermal Resistance Junction-Ambient
(Note 1)
Max.
Value
90
Units
ºC/W
Electrical Characteristics
(T
J
=25ºC unless otherwise specified)
Symbol
BV
DSS
Parameter
Drain-Source breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=0V, I
D
=-250uA
Reference to 25 ºC,
∆BV
DSS
/∆ Breakdown Voltage Temperature I
D
=1mA
Coefficient
T
J
Reference to 25 ºC,
I
D
=-1mA
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=4A
V
GS
=2.5V, I
D
=2A
Static Drain-Source
R
DS(ON)
On-Resistance
(Note 3)
V
GS
=-10V, I
D
=-4A
V
GS
=-4.5V, I
D
=-3A
V
GS
=-2.5V, I
D
=-2A
V
DS
= V
GS
, I
D
=250uA
V
GS(th)
Gate-Threshold Voltage
V
DS
= V
GS
, I
D
=-250uA
V
DS
=5V, I
D
=4A
g
fs
Forward Transconductance
V
DS
=-5V, I
D
=-3A
T
J
=25ºC V
DS
=30V, V
GS
=0V
Drain-Source Leakage T
J
=70ºC V
DS
=24V, V
GS
=0V
I
DSS
Current
T
J
=25ºC V
DS
=-30V, V
GS
=0V
T
J
=70ºC V
DS
=-24V, V
GS
=0V
I
GSS
Q
g
Q
gs
Q
gd
Gate-Source Leakage
Total Gate Charge
(Note 3)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
V
GS
=±12V
N-Channel
V
DS
=24V, V
GS
=4.5V
I
D
=4A
P-Channel
V
DS
=-24V, V
GS
=-4.5V
I
D
=-3A
CH
N
P
N
P
N
Limits
Min.
Typ.
30
-
-30
-
-
-
-
-
-
-
-
-
0.5
-0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.03
-0.02
-
-
-
-
-
-
-
-
13
8
-
-
-
-
-
-
9
10
1.6
2
4
3
Max.
-
-
-
V/ºC
-
40
50
60
70
90
120
-
-
-
-
1
25
-1
-25
±100
±100
15
16
-
-
-
-
Unit
V
mΩ
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
V
S
uA
nA
nC
Anachip Corp.
www.anachip.com.tw
2/8
Rev. 1.0
Sep 22, 2005
AF9902M
2N and 2P-Channel Enhancement Mode Power MOSFET
Electrical Characteristics
(T
J
=25ºC unless otherwise specified)
Symbol
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Turn-On Delay Time
(Note 3)
Rise Time
Turn-Off Delay Time
Fall-Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
N-Channel
V
DS
=15V, V
GS
=5V
I
D
=1A, R
G
=3.3Ω,
R
D
=15Ω
P-Channel
V
DS
=-15V, V
GS
=-5V
I
D
=-1A, R
G
=3.3Ω,
R
D
=15Ω
N-Channel
V
GS
=0V, V
DS
=25V
f=1.0MHz
P-Channel
V
GS
=0V, V
DS
=-25V
f=1.0MHz
CH
N
P
N
P
N
P
N
P
N
P
N
P
N
P
Limits
Min.
Typ.
-
8
-
8
-
9
-
9
-
17
-
25
-
5
-
14
-
630
-
690
-
140
-
170
-
65
-
75
Max.
-
-
-
-
-
-
-
-
1000
1100
-
-
-
-
Unit
ns
pF
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
(Note 3)
Reverse Recovery Time
Reverse Recovery Charge
2
Test Conditions
I
S
=1.2A, V
GS
=0V
I
S
=-1.2A, V
GS
=0V
N-Channel
I
S
=4A, V
GS
=0V
dl/dt=100A/µs
P-Channel
I
S
=-3A, V
GS
=0V
dl/dt=-100A/µs
CH
N
P
N
P
N
P
Limits
Min.
Typ.
-
-
-
-
-
17
-
-
-
25
9
20
Max.
1.2
-1.2
-
-
-
-
Unit
V
ns
nC
Note 1:
Surface Mounted on 1 in copper pad of FR4 board; t
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