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HY62256AT1

Description
DRAM & SRAM MEMORY
File Size792KB,14 Pages
ManufacturerETC
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HY62256AT1 Overview

DRAM & SRAM MEMORY

Data Sheet-sram/62256ald1
http://www.hea.com/hean2/sram/62256ald1.htm
HY62256A-(I) Series
32Kx8bit CMOS SRAM
Description
Features
The
Fully static operation and
HY62256A/HY62256A-I
Tri-state outputs
is a high-speed, low
TTL compatible inputs
power and 32,786 x 8-bits
and outputs
CMOS Static Random
Low power consumption
Access Memory
-2.0V(min.) data
fabricated using
retention
Hyundai's high
Standard pin
performance CMOS
configuration
process technology. The
-28 pin 600 mil PDIP
HY62256A/HY62256A-I
-28 pin 330 mil SOP
has a data retention mode
-28 pin 8x13.4 mm
that guarantees data to
TSOP-1
remain valid at the
(standard and reversed)
minimum power supply
voltage of 2.0 volt. Using
the CMOS technology,
supply voltages from 2.0
to 5.5 volt has little effect
on supply current in the
data retention mode. The
HY62256A/HY62256A-I
is suitable for use in low
voltage operation and
battery back-up
application.
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22/10/97 12:30

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