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Datasheet> All Categories > Discrete semiconductor> diode> HSMS-2823-BLKG
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HSMS-2823-BLKG

Description
SILICON, C BAND, MIXER DIODE
CategoryDiscrete semiconductor    diode   
File Size201KB，14 Pages
ManufacturerHP（Keysight）
Websitehttp://www.semiconductor.agilent.com/
Environmental Compliance
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SILICON, C BAND, MIXER DIODE

HSMS-2823-BLKG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerHP（Keysight）
Parts packaging codeSOT-23
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationCOMMON ANODE, 2 ELEMENTS
Maximum diode capacitance1 pF
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)0.34 V
frequency bandC BAND
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage15 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

HSMS-2823-BLKG Preview

Surface Mount RF Schottky
Barrier Diodes
Technical Data
HSMS-282x Series
Features
• Low Turn-On Voltage
(As Low as 0.34 V at 1 mA)
• Low FIT (Failure in Time)
Rate*
• Six-sigma Quality Level
• Single, Dual and Quad
Versions
• Unique Configurations in
Surface Mount SOT-363
Package
Package Lead Code Identification, SOT-23/SOT-143
(Top View)
COMMON
COMMON
SINGLE
3
SERIES
3
ANODE
3
CATHODE
3
1
#0
2
1
#2
2
1
#3
2
1
#4
2
UNCONNECTED
PAIR
3
4
RING
QUAD
3
4
BRIDGE
QUAD
3
4
CROSS-OVER
QUAD
3
4
– increase flexibility
– save board space
– reduce cost
• HSMS-282K Grounded
Center Leads Provide up to
10 dB Higher Isolation
• Matched Diodes for
Consistent Performance
• Better Thermal Conductivity
for Higher Power Dissipation
1
#5
2
1
#7
2
1
#8
2
1
#9
2
Package Lead Code Iden-
tification, SOT-323
(Top View)
SINGLE
SERIES
Package Lead Code Iden-
tification, SOT-363
(Top View)
HIGH ISOLATION
UNCONNECTED PAIR
6
5
4
UNCONNECTED
TRIO
6
5
4
• Lead-free Option Available
*
For more information see the
Surface Mount Schottky
Reliability Data Sheet.
B
COMMON
ANODE
C
COMMON
CATHODE
1
2
3
K
COMMON
CATHODE QUAD
6
5
4
1
2
3
L
COMMON
ANODE QUAD
6
5
4
E
F
1
2
Description/Applications
These Schottky diodes are
specifically designed for both
analog and digital applications.
This series offers a wide range of
specifications and package
configurations to give the
designer wide flexibility. Typical
applications of these Schottky
diodes are mixing, detecting,
switching, sampling, clamping,
and wave shaping. The
HSMS-282x series of diodes is the
best all-around choice for most
applications, featuring low series
resistance, low forward voltage at
all current levels and good RF
characteristics.
Note that Agilent’s manufacturing
techniques assure that dice found
in pairs and quads are taken from
adjacent sites on the wafer,
assuring the highest degree of
match.
M
3
1
2
N
3
BRIDGE
QUAD
6
5
4
6
RING
QUAD
5
4
1
2
P
3
1
2
R
3
2
Pin Connections and
Package Marking
1
2
3
6
5
4
Absolute Maximum Ratings
[1]
T
C
= 25°C
Symbol Parameter
I
f
P
IV
T
j
T
stg
θ
jc
Forward Current (1
µs
Pulse)
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Thermal Resistance
[2]
Unit SOT-23/SOT-143 SOT-323/SOT-363
Amp
V
°C
°C
°C/W
1
15
150
-65 to 150
500
1
15
150
-65 to 150
150
Notes:
1. Package marking provides
orientation and identification.
2. See “Electrical Specifications” for
appropriate package marking.
Electrical Specifications T
C
= 25
°
C, Single Diode
[4]
Part
Package
Number Marking Lead
HSMS
[5]
Code
Code
2820
2822
2823
2824
2825
2827
2828
2829
282B
282C
282E
282F
282K
282L
282M
282N
282P
282R
C0
[3]
C2
[3]
C3
[3]
C4
[3]
C5
[3]
C7
[3]
C8
[3]
C9
[3]
C0
[7]
C2
[7]
C3
[7]
C4
[7]
CK
[7]
CL
[7]
HH
[7]
NN
[7]
CP
[7]
OO
[7]
0
2
3
4
5
7
8
9
B
C
E
F
K
L
M
N
P
R
Minimum Maximum
Breakdown Forward
Voltage
Voltage
V
BR
(V)
V
F
(mV)
15
340
Maximum
Forward
Voltage
V
F
(V) @
I
F
(mA)
0.5
10
Maximum
Reverse
Typical
Leakage
Maximum
Dynamic
I
R
(nA) @ Capacitance Resistance
Ω
V
R
(V)
C
T
(pF)
R
D
(Ω)
[6]
100
1
1.0
12
Test Conditions
Notes:
1.
∆V
F
for diodes in pairs and quads in 15 mV maximum at 1 mA.
2.
∆C
TO
for diodes in pairs and quads is 0.2 pF maximum.
3. Package marking code is in white.
4. Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
5. See section titled “Quad Capacitance.”
6. R
D
= R
S
+ 5.2
Ω
at 25°C and I
f
= 5 mA.
7. Package marking code is laser marked.
GUx
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to
the device.
2. T
C
= +25°C, where T
C
is defined to be the temperature at the package pins where
contact is made to the circuit board.
Configuration
Single
Series
Common Anode
Common Cathode
Unconnected Pair
Ring Quad
[5]
Bridge Quad
[5]
Cross-over Quad
Single
Series
Common Anode
Common Cathode
High Isolation
Unconnected Pair
Unconnected Trio
Common Cathode Quad
Common Anode Quad
Bridge Quad
Ring Quad
I
R
= 100
µA
I
F
= 1 mA
[1]
V
F
= 0 V
f = 1 MHz
[2]
I
F
= 5 mA
3
Quad Capacitance
Capacitance of Schottky diode
quads is measured using an
HP4271 LCR meter. This
instrument effectively isolates
individual diode branches from
the others, allowing accurate
capacitance measurement of each
branch or each diode. The
conditions are: 20 mV R.M.S.
voltage at 1 MHz. Agilent defines
this measurement as “CM”, and it
is equivalent to the capacitance of
the diode by itself. The equivalent
diagonal and adjacent capaci-
tances can then be calculated by
the formulas given below.
In a quad, the diagonal capaci-
tance is the capacitance between
points A and B as shown in the
figure below. The diagonal
capacitance is calculated using
the following formula
C
1
x C
2
C
3
x C
4
C
DIAGONAL
= _______ + _______
C
1
+ C
2
C
3
+ C
4
A
C
1
C
C
2
C
4
B
C
3
The equivalent adjacent
capacitance is the capacitance
between points A and C in the
figure below. This capacitance is
calculated using the following
formula
1
C
ADJACENT
= C
1
+ ____________
1 1
1
–– + –– + ––
C
2
C
3
C
4
This information does not apply
to cross-over quad diodes.
Linear Equivalent Circuit Model
Diode Chip
R
j
R
S
SPICE Parameters
Parameter Units
B
V
C
J0
E
G
I
BV
I
S
N
R
S
P
B
P
T
M
V
pF
eV
A
A
Ω
V
HSMS-282x
15
0.7
0.69
1E - 4
2.2E - 8
1.08
6.0
0.65
2
0.5
C
j
R
S
= series resistance (see Table of SPICE parameters)
C
j
= junction capacitance (see Table of SPICE parameters)
R
j
=
8.33 X 10
-5
nT
I
b
+ I
s
where
I
b
= externally applied bias current in amps
I
s
= saturation current (see table of SPICE parameters)
T = temperature,
°K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-282x product,
please refer to Application Note AN1124.
ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.
4
Typical Performance, T
C
= 25
°
C (unless otherwise noted), Single Diode
100
I
F
– FORWARD CURRENT (mA)
C
T
– CAPACITANCE (pF)
I
R
– REVERSE CURRENT (nA)
10
T
A
= +125°C
T
A
= +75°C
T
A
= +25°C
T
A
= –25°C
100,000
1
10,000
0.8
1000
0.6
1
100
0.4
0.1
10
1
0
5
0.01
0
0.10
0.20
0.30
0.40
0.50
V
F
– FORWARD VOLTAGE (V)
T
A
= +125°C
T
A
= +75°C
T
A
= +25°C
10
15
0.2
0
0
2
4
6
8
V
R
– REVERSE VOLTAGE (V)
V
R
– REVERSE VOLTAGE (V)
Figure 1. Forward Current vs.
Forward Voltage at Temperatures.
Figure 2. Reverse Current vs.
Reverse Voltage at Temperatures.
Figure 3. Total Capacitance vs.
Reverse Voltage.
∆V
F
- FORWARD VOLTAGE DIFFERENCE (mV)
1000
30
30
100
1.0
10
I
F
(Left Scale)
10
100
I
F
(Left Scale)
10
10
1
∆V
F
(Right Scale)
1
∆V
F
(Right Scale)
1
0.1
1
10
100
0.3
0.2
0.4
0.6
0.8
1.0
1.2
0.3
1.4
1
0.10
0.15
0.20
0.1
0.25
I
F
– FORWARD CURRENT (mA)
V
F
- FORWARD VOLTAGE (V)
V
F
- FORWARD VOLTAGE (V)
Figure 4. Dynamic Resistance vs.
Forward Current.
Figure 5. Typical V
f
Match, Series Pairs
and Quads at Mixer Bias Levels.
Figure 6. Typical V
f
Match, Series Pairs
at Detector Bias Levels.
1
10
10
V
O
– OUTPUT VOLTAGE (V)
V
O
– OUTPUT VOLTAGE (V)
DC bias = 3
µA
0.1
-25°C
+25°C
+75°C
0.1
0.01
+25°C
CONVERSION LOSS (dB)
1
9
8
0.01
RF in 18 nH HSMS-282B Vo
3.3 nH
100 pF
100 KΩ
0
0.001
0.0001
1E-005
-20
RF in
68
Ω
HSMS-282B
Vo
100 pF
7
4.7 KΩ
20
30
6
0
2
4
6
8
10
12
LOCAL OSCILLATOR POWER (dBm)
0.001
-40
-30
-20
-10
-10
0
10
P
in
– INPUT POWER (dBm)
P
in
– INPUT POWER (dBm)
Figure 7. Typical Output Voltage vs.
Input Power, Small Signal Detector
Operating at 850 MHz.
Figure 8. Typical Output Voltage vs.
Input Power, Large Signal Detector
Operating at 915 MHz.
Figure 9. Typical Conversion Loss vs.
L.O. Drive, 2.0 GHz (Ref AN997).
∆V
F
- FORWARD VOLTAGE DIFFERENCE (mV)
R
D
– DYNAMIC RESISTANCE (Ω)
I
F
- FORWARD CURRENT (mA)
I
F
- FORWARD CURRENT (µA)
5
Applications Information
Product Selection
Agilent’s family of surface mount
Schottky diodes provide unique
solutions to many design prob-
lems. Each is optimized for
certain applications.
The first step in choosing the right
product is to select the diode type.
All of the products in the
HSMS-282x family use the same
diode chip – they differ only in
package configuration. The same
is true of the HSMS-280x, -281x,
285x, -286x and -270x families.
Each family has a different set of
characteristics, which can be
compared most easily by consult-
ing the SPICE parameters given
on each data sheet.
The HSMS-282x family has been
optimized for use in RF applica-
tions, such as


DC biased small signal
detectors to 1.5 GHz.
Biased or unbiased large
signal detectors (AGC or
power monitors) to 4 GHz.
Mixers and frequency
multipliers to 6 GHz.
need very low flicker noise. The
HSMS-285x is a family of zero bias
detector diodes for small signal
applications. For high frequency
detector or mixer applications,
use the HSMS-286x family. The
HSMS-270x is a series of specialty
diodes for ultra high speed
clipping and clamping in digital
circuits.
Schottky Barrier Diode Char-
acteristics
Stripped of its package, a
Schottky barrier diode chip
consists of a metal-semiconductor
barrier formed by deposition of a
metal layer on a semiconductor.
The most common of several
different types, the passivated
diode, is shown in Figure 10,
along with its equivalent circuit.
R
S
is the parasitic series resis-
tance of the diode, the sum of the
bondwire and leadframe resis-
tance, the resistance of the bulk
layer of silicon, etc. RF energy
coupled into R
S
is lost as heat—it
does not contribute to the recti-
fied output of the diode. C
J
is
parasitic junction capacitance of
the diode, controlled by the thick-
ness of the epitaxial layer and the
diameter of the Schottky contact.
R
j
is the junction resistance of the
diode, a function of the total
current flowing through it.
8.33 X 10
-5
n T
R
j
= –––––––––––– = R
V
– R
s
I
S
+ I
b
0.026
≈
––––– at 25°C
I
S
+ I
b
where
n = ideality factor (see table of
SPICE parameters)
T = temperature in
°K
I
S
= saturation current (see
table of SPICE parameters)
I
b
= externally applied bias
current in amps
R
v
= sum of junction and series
resistance, the slope of the
V-I curve
I
S
is a function of diode barrier
height, and can range from
picoamps for high barrier diodes
to as much as 5
µA
for very low
barrier diodes.
The Height of the Schottky
Barrier
The current-voltage characteristic
of a Schottky barrier diode at
room temperature is described by
the following equation:
I = I
S
(e
S
–––––

V - IR
0.026
– 1)
The other feature of the
HSMS-282x family is its
unit-to-unit and lot-to-lot consis-
tency. The silicon chip used in this
series has been designed to use
the fewest possible processing
steps to minimize variations in
diode characteristics. Statistical
data on the consistency of this
product, in terms of SPICE
parameters, is available from
Agilent.
For those applications requiring
very high breakdown voltage, use
the HSMS-280x family of diodes.
Turn to the HSMS-281x when you
N-TYPE OR P-TYPE SILICON SUBSTRATE
;;
METAL
PASSIVATION
N-TYPE OR P-TYPE EPI
On a semi-log plot (as shown in
the Agilent catalog) the current
graph will be a straight line with
inverse slope 2.3 X 0.026 = 0.060
volts per cycle (until the effect of
R
S
PASSIVATION
LAYER
SCHOTTKY JUNCTION
C
j
R
j
CROSS-SECTION OF SCHOTTKY
BARRIER DIODE CHIP
EQUIVALENT
CIRCUIT
Figure 10. Schottky Diode Chip.
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