Surface Mount PIN Diodes
in SOT-323 (SC-70 3-Lead)
Technical Data
HSMP-381B/C/E/F
HSMP-386B/C/E/F
HSMP-389B/C/E/F
HSMP-481B, -482B, -489B
Features
• Diodes Optimized for:
Low Current Switching
Low Distortion Attenuating
Ultra-Low Distortion Switching
Microwave Frequency
Operation
• Surface Mount SOT-323
(SC-70)Package
Single and Pair Versions
Tape and Reel Options
Available
• Low Failure in Time (FIT)
Rate*
* For more information see the
Surface Mount PIN Reliability
Data Sheet.
Package Lead Code
Identification
(Top View)
SINGLE
SERIES
Description/Applications
The HSMP-381B/C/E/F series is
specifically designed for low
distortion attenuator applications.
The HSMP-386B/C/E/F series is a
general purpose PIN diode
designed for low current attenua-
tors and low cost switches. The
HSMP-389B/C/E/ F series is
optimized for switching applica-
tions where low resistance at low
current, and low capacitance are
required.
The HSMP-48XB series is special
products featuring ultra low
parasitic inductance in the SOT-
323 package, specifically designed
for use at frequencies which are
much higher than the upper limit
for conventional SOT-323 PIN
diodes. The HSMP-481B diode is a
low distortion attenuating PIN
designed for operation to 3 GHz.
The HSMP-482B diode is ideal for
limiting and low inductance
switching applications up to
1.5 GHz. The HSMP-489B is
optimized for low current switch-
ing applications up to 3 GHz.
B
COMMON
ANODE
C
COMMON
CATHODE
E
DUAL ANODE
F
DUAL CATHODE
482B / 489B
481B
Absolute Maximum Ratings
[1]
, T
C
= + 25°C
Symbol Parameter
I
f
P
iv
T
J
T
STG
θ
jc
Unit Absolute Maximum
1
Same as V
BR
150
-65 to 150
300
Forward Current (1
µs
Pulse) Amp
Peak Inverse Voltage
V
Junction Temperature
°C
Storage Temperature
°C
Thermal Resistance
[2]
°C/W
Notes:
1. Operation in excess of any one of these conditions may result in
permanent damage to the device.
2. T
C
= 25°C, where T
C
is defined to be the temperature at the package
pins where contact is made to the circuit board.
2
Electrical Specifications, T
C
= +25°C, each diode
PIN Attenuator Diodes
Part Package
Number Marking Lead
HSMP- Code
[1]
Code Configuration
381B
381C
381E
381F
E0
E2
E3
E4
B
C
E
F
Single
Series
Common Anode
Common Cathode
Minimum Maximum Maximum Minimum Maximum
Breakdown
Total
Total
High
Low
Voltage Resistance Capacitance Resistance Resistance
V
BR
(V)
R
T
(Ω)
C
T
(pF)
R
H
(Ω)
R
L
(Ω)
100
3.0
0.35
1500
10
Test Conditions
V
R
= V
BR
Measure
I
R
≤
10
µA
I
F
= 100 mA
f = 100 MHz
V
R
= 50 V
f = 1 MHz
I
R
= 0.01 mA I
F
= 20 mA
f = 100 MHz f = 100 MHz
PIN General Purpose Diodes
Part
Number
HSMP-
386B
386C
386E
386F
Package
Marking
Code
[1]
L0
L2
L3
L4
Minimum
Breakdown
Voltage
V
BR
(V)
50
Typical
Total
Resistance
R
T
(Ω)
3.0
1.5*
Typical
Total
Capacitance
C
T
(pF)
0.20
Lead
Code
B
C
E
F
Configuration
Single
Series
Common Anode
Common Cathode
Test Conditions
V
R
= V
BR
Measure
I
R
≤
10
µA
I
F
= 10 mA
f = 100 MHz
I
F
= 100 mA*
V
R
= 50 V
f = 1 MHz
PIN Switching Diodes
Part
Number
HSMP-
Package
Marking
Code
[1]
Minimum
Breakdown
Voltage
V
BR
(V)
100
Maximum
Total
Resistance
R
T
(Ω)
2.5
Maximum
Total
Capacitance
C
T
(pF)
0.30
Lead
Code
B
C
E
F
Configuration
Single
Series
Common Anode
Common Cathode
389B
G0
389C
G2
389E
G3
389F
G4
Test Conditions
V
R
= V
BR
Measure
I
R
≤
10
µA
I
F
= 5 mA
f = 100 MHz
V
R
= 5 V
f = 1 MHz
3
Electrical Specifications, T
C
= +25°C, each diode,
continued
Typical Parameters
Part Number
HSMP-
381A Series
386A Series
389A Series
Test Conditions
Total Resistance Carrier Lifetime
R
T
(Ω)
τ
(ns)
75
22
3.8
I
F
= 1 mA
f = 100 MHz
1500
500
200*
I
F
= 50 mA
T
R
= 250 mA
I
F
= 10 mA*
I
R
= 6 mA*
Reverse Recovery Time
T
rr
(ns)
300
80
—
V
R
= 10 V
I
F
= 20 mA
90% Recovery
Total Capacitance
(pF)
0.27
0.20
—
50 V
Note:
1. Package marking code is laser marked.
High Frequency (Low Inductance, 500 MHz – 3 GHz PIN Diodes
Part
Number
HSMP-
481B
482B
489B
Minimum Maximum
Typical
Maximum
Typical
Package
Breakdown Series
Total
Total
Total
Marking
Voltage Resistance Capacitance Capacitance Inductance
Code Configuration V
BR
(V)
R
S
(Ω)
C
T
(pF)
C
T
(pF)
L
T
(nH) Application
EB
FA
GA
Dual Cathode
Dual Anode
Dual Anode
100
50
100
V
R
= V
BR
Measure
I
R
≤
10
µA
3.0
0.6*
2.5**
I
F
= 100 mA
I
F
= 10 mA*
I
F
= 5 mA**
0.35
0.75*
0.33**
V
R
= 50 V
f = 1 MHz
V
R
= 20 V*
V
R
= 5 V**
0.4
1.0
0.375*
V
R
= 50 V
f = 1 MHz
V
R
= 5 V*
1.0
1.0*
1.0
f =500 MHz –
3 GHz
V
R
= 20 V*
Attenuator
Limiter
Switch
Test Conditions
4
Typical Performance, T
C
= 25°C
0.45
TOTAL CAPACITANCE (pF)
0.40
0.35
1 MHz
0.30
0.25
0.20
frequency>100 MHz
0.15
0
2
4
6
8
10 12 14 16 18 20
30 MHz
TOTAL CAPACITANCE (pF)
0.35
10000
HSMP-381B/C/E/F, -481B
0.30
1 MHz
0.25
100 MHz
0.20
1 GHz
RF RESISTANCE (OHMS)
1000
100
HSMP-
386B/C/E/F
HSMP-482B
10
1
HSMP-389B/C/E/F, -489B
0.15
0
2
4
6
8
10 12 14 16 18 20
REVERSE VOLTAGE (V)
REVERSE VOLTAGE (V)
0.1
0.01
0.1
1
10
100
I
F
– FORWARD BIAS CURRENT (mA)
Figure 1. RF Capacitance vs. Reverse
Bias, HSMP-381B/C/E/F Series.
Figure 2. RF Capacitance vs. Reverse
Bias, HSMP-386B/C/E/F Series.
Figure 3. Total RF Resistance at
25° C vs. Forward Bias Current.
10000
TOTAL RF RESISTANCE (OHMS)
1000
C
T
– CAPACITANCE (pF)
1.2
1
0.8
0.6
0.4
0.2
HSMP-482B
INPUT INTERCEPT POINT (dBm)
T
A
= +85°C
T
A
= +25°C
T
A
= –55°C
1.4
HSMP-381B/C/E/F
HSMP-386B/C/E/F
HSMP-389B/C/E/F
120
Diode Mounted as a
110 Series Attenuator in
a 50Ω Microstrip and
100 Tested at 123 MHz
90
80
70
60
50
40
1000
100
10
HSMP-381B/C/E/F
100
10
1.0
0.01
0.1
1
10
100
I
F
– FORWARD BIAS CURRENT (mA)
0
0
10
20
30
40
50
V
R
– REVERSE VOLTAGE (V)
DIODE RF RESISTANCE (OHMS)
Figure 4. RF Resistance vs. Forward
Bias Current for HSMP-381B/C/E/F
Series and HSMP-481B.
Figure 5. Capacitance vs. Reverse
Voltage at 1 MHz.
Figure 6. 2nd Harmonic Input
Intercept Point vs. Diode RF
Resistance for Attenuator Diodes.
T
rr
– REVERSE RECOVERY TIME (ns)
INPUT INTERCEPT POINT (dBm)
Diode Mounted as a
115 Series Switch in
a 50Ω Microstrip and
110 Tested at 123 MHz
105
HSMP-3880
HSMP-389B/C/E/F
100
95
90
85
1
HSMP-386B/C/E/F
10
30
V
R
= 2V
V
R
= 5V
10
V
R
= 10 V
T
rr
- REVERSE RECOVERY TIME (nS)
120
100
1000
V
R
= 5V
100
V
R
= 10V
V
R
= 20V
1
10
20
FORWARD CURRENT (mA)
30
10
10
20
FORWARD CURRENT (mA)
30
I
F
– FORWARD BIAS CURRENT (mA)
Figure 7. 2nd Harmonic Input
Intercept Point vs. Forward Bias
Current for Switch Diodes.
Figure 8. Reverse Recovery Time vs.
Forward Current for Various Reverse
Voltages. HSMP-482B.
Figure 9. Reverse Recovery Time vs.
Forward Current for Various Reverse
Voltages. HSMP-386B/C/E/F Series.
5
Typical Performance, T
C
= 25°C
T
rr
– REVERSE RECOVERY TIME (nS)
200
I
F
– FORWARD CURRENT (mA)
100
I
F
– FORWARD CURRENT (mA)
100
160
V
R
= –2V
120
10
10
1
1
80
V
R
= –5V
40
V
R
= –10V
0
10
15
20
25
30
0.1
0.1
125°C 25°C –50°C
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
125°C
0
0.2
0.4
25°C –50°C
0.6
0.8
1.0
1.2
FORWARD CURRENT (mA)
V
F
– FORWARD VOLTAGE (mA)
V
F
– FORWARD VOLTAGE (mA)
Figure 10. Typical Reverse Recovery
Time vs. Reverse Voltage.
HSMP-389B/C/E/F Series.
100
I
F
– FORWARD CURRENT (mA)
Figure 11. Forward Current vs.
Forward Voltage. HSMP-381B/C/E/F
Series and HSMP-481B.
100
I
F
– FORWARD CURRENT (mA)
Figure 12. Forward Current vs.
Forward Voltage. HSMP-482B.
10
10
1
1
0.1
125°C
0
0.2
0.4
25°C –50°C
0.6
0.8
0.1
0.01
1.0
1.2
0.01
125°C 25°C –50°C
0
0.2
0.4
0.6
0.8
1.0
1.2
V
F
– FORWARD VOLTAGE (V)
V
F
– FORWARD VOLTAGE (V)
Figure 13. Forward Current vs.
Forward Voltage. HSMP-386B/C/E/F
Series.
Figure 14. Forward Current vs.
Forward Voltage. HSMP-389B/C/E/F
Series and HSMP-489B.
Analog electronics
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