HANBit
HMS51232J4V
HAN
BI T
SRAM MODULE 2Mbyte (512Kx32Bit), 68-Pin JLCC Packaging,3.3V
Part No.
HMS51232J4V
GENERAL DESCRIPTION
The HMS51232J4V is a static random access memory (SRAM) module containing 524,288 words organized in a
x32-bit configuration. The module consists of four 512K x 8 SRAMs mounted on a 68-pin, single-sided, FR4-
printed circuit board.
Four chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module’s 4 bytes independently.
Output enable (/OE) and write enable (/WE) can set the memory input and output.
Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW.
Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be
powered from a single +3.3V DC power supply and all inputs and outputs are fully LVTTL-compatible..
FEATURES
Access time : 15, 17, 20 and 25ns
High-density 2MByte design
High-reliability, low-power design
Single +3V
±0.3V
power supply
Three state output and LVTTL-compatible
FR4-PCB design
Low profile 68-Pin JLCC
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PIN ASSIGNMENT
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OPTIONS
Timing
15ns access
17ns access
20ns access
25ns access
MARKING
-15
-17
-20
-25
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Packages
68-pin JLCC
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68-Pin JLCC
TOP VIEW
HANBit Electronics Co.,Ltd.
HANBit
PIN DESCRIPTION
DQ0 – DQ31
A0 – A18
Data Inputs/Outputs
Address Inputs
Write Enable
Chip Selects
Output Enable
Power Supply
Ground
HMS51232J4V
/
WE
/
CE1-4
/
OE
Vcc
Vss
BLOCK DIAGRAM
/CS1
/WE
/OE
A0-18
/CS2
/CS3
/CS4
512Kx8
512Kx8
512Kx8
512Kx8
8
8
8
8
DQ0-7
DQ8-15
DQ16-23
DQ24-31
TRUTH TABLE
MODE
STANDBY
NOT SELECTED
READ
WRITE
/OE
X
H
L
X
/CE
H
L
L
L
/WE
X
H
H
L
DQ
HIGH-Z
HIGH-Z
Dout
Din
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
2
HANBit Electronics Co.,Ltd.
HANBit
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage on Any Pin Relative to Vss
Voltage on Vcc Supply Relative to Vss
Power Dissipation
Storage Temperature
SYMBOL
V
IN,OUT
V
CC
P
D
T
STG
HMS51232J4V
RATING
-0.5V to +4.6V
-0.5V to +4.6V
4W
-65oC to +150oC
Operating Temperature
T
A
0oC to +70oC
Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
*
SYMBOL
V
CC
V
SS
V
IH
V
IL
MIN
3.0V
0
2.0
-0.5*
( TA=0 to 70 o C )
TYP.
3.3V
0
-
-
MAX
3.6V
0
Vcc+0.3V**
0.8V
V
IL
(Min.) = -2.0V (Pulse Width
≤
10ns) for I
≤
20 mA
**
V
IH
(Min.) = Vcc+2.0V (Pulse Width
≤
10ns) for I
≤
20 mA
DC AND OPERATING CHARACTERISTICS (1)
(0oC
≤
TA
≤
70 oC ; Vcc = 3.3V
±
0.3V, Unless otherwise specified)
PARAMETER
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
* Vcc=3.3V, Temp=25 oC
TEST CONDITIONS
V
IN
= Vss to Vcc
/CE=V
IH or /
OE =V
IH
or /WE=V
IL
V
OUT
=Vss to V
CC
I
OH
= -4.0mA
I
OL
= 8.0mA
SYMBO
L
IL
I
IL
0
V
OH
V
OL
MIN
-2
-2
2.4
0.4
MAX
2
2
UNITS
µA
µA
V
V
DC AND OPERATING CHARACTERISTICS (2)
MAX
DESCRIPTION
Power Supply
Current:Operating
Power Supply
Current:Standby
TEST CONDITIONS
Min. Cycle, 100% Duty
/CE=V
IL
, V
IN
=V
IH
or V
IL
,
I
OUT
=0mA
Min. Cycle, /CE=V
IH
f=0MHZ, /CE≥V
CC
-0.2V,
V
IN
≥
V
CC
-0.2V or V
IN
≤0.2V
SYMBOL
l
CC
l
SB
l
SB1
-10
205
50
10
-12
200
50
10
-15
195
50
10
UNIT
mA
mA
mA
3
HANBit Electronics Co.,Ltd.
HANBit
CAPACITANCE
DESCRIPTION
Input /Output Capacitance
Input Capacitance
TEST CONDITIONS
V
I/O
=0V
V
IN
=0V
SYMBOL
C
I/O
C
IN
HMS51232J4V
MAX
8
7
UNIT
pF
pF
*
NOTE
: Capacitance is sampled and not 100% tested
AC CHARACTERISTICS
(0oC
≤
TA
≤
70 oC ; Vcc = 3.3V
±
0.3V, unless otherwise specified)
TEST CONDITIONS
PARAMETER
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
VALUE
0 to 3V
3ns
1.5V
See below
Output Load (A)
V
L
=1.5V
50
Ω
D
OUT
Z0=50
Ω
30pF
D
OUT
353
Ω
Output Load (B)
for t
HZ
, t
LZ
, t
WHZ
, t
OW
, t
OLZ
& t
OHZ
+3.3V
319
Ω
5pF*
READ CYCLE
-10
PARAMETER
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Output
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
-12
-15
UNIT
t
RC
t
AA
t
CO
t
OE
t
LZ
t
OLZ
t
HZ
t
OHZ
10
-
-
-
3
0
0
0
-
10
10
5
-
-
5
5
12
-
-
-
3
0
0
0
-
12
12
6
-
-
6
6
15
-
-
-
3
0
0
0
-
15
15
7
-
-
7
7
ns
ns
ns
ns
ns
ns
ns
ns
4
HANBit Electronics Co.,Ltd.
HANBit
Output Hold from Address Change
Chip Select to Power Up Time
Chip Select to Power Down Time
t
OH
t
PU
t
PD
3
0
-
-
-
15
3
0
-
-
-
12
HMS51232J4V
3
0
-
-
-
15
ns
ns
ns
WRITE CYCLE
-10
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
PARAMETER
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write Pulse Width (/OE High)
Write Pulse Width (/OE Low)
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End of Write to Output Low-Z
-12
-15
UNIT
t
WC
t
CW
t
AS
t
AW
t
WP
t
WP1
t
WR
t
WHZ
t
DW
t
DH
t
OW
10
7
0
7
7
10
0
0
5
0
3
-
-
-
-
-
-
-
5
-
-
-
12
8
0
8
8
12
0
0
6
0
3
-
-
-
-
-
-
-
6
-
-
-
10
10
0
10
10
15
0
0
7
0
3
-
-
-
-
-
-
-
7
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
TIMING DIAGRAMS
See Part No. HMS51232M4/Z4
FUNCTIONAL DESCRIPTION
/CE
H
L
L
L
/WE
X*
H
H
L
/OE
X
H
L
X
MODE
Not Select
Output Disable
Read
Write
I/O PIN
High-Z
High-Z
D
OUT
D
IN
SUPPLY CURRENT
I
SB
, I
SB1
I
CC
I
CC
I
CC
Note: X means Don't Care
5
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Embedded System
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