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SSH20N50

Description
N-CHANNEL POWER MOSFETS
CategoryDiscrete semiconductor    The transistor   
File Size277KB,5 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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SSH20N50 Overview

N-CHANNEL POWER MOSFETS

SSH20N50 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeTO-3P
package instructionTO-3P, 3 PIN
Contacts2
Reach Compliance Codeunknow
Avalanche Energy Efficiency Rating (Eas)960 mJ
ConfigurationSINGLE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)20 A
Maximum drain current (ID)20 A
Maximum drain-source on-resistance0.3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment150 W
Maximum power dissipation(Abs)150 W
Maximum pulsed drain current (IDM)80 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)840 ns
Maximum opening time (tons)410 ns

SSH20N50 Related Products

SSH20N50 SSH20N45
Description N-CHANNEL POWER MOSFETS N-CHANNEL POWER MOSFETS
Maker SAMSUNG SAMSUNG
Parts packaging code TO-3P TO-3P
package instruction TO-3P, 3 PIN FLANGE MOUNT, R-PSFM-T3
Contacts 2 3
Reach Compliance Code unknow unknow
Avalanche Energy Efficiency Rating (Eas) 960 mJ 960 mJ
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 500 V 450 V
Maximum drain current (Abs) (ID) 20 A 20 A
Maximum drain current (ID) 20 A 20 A
Maximum drain-source on-resistance 0.3 Ω 0.3 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power consumption environment 150 W 150 W
Maximum power dissipation(Abs) 150 W 150 W
Maximum pulsed drain current (IDM) 80 A 80 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Maximum off time (toff) 840 ns 840 ns
Maximum opening time (tons) 410 ns 410 ns
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