HM628128T-10 datasheet, PDF - EEWORLD Datasheet

HM628128T-10: Description131072-word x 8-bit High Speed CMOS Static RAM; Categorystorage storage; File Size756KB，16 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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HM628128T-10 Overview

131072-word x 8-bit High Speed CMOS Static RAM

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TSOP
package instruction	TSOP1, TSSOP32,.8,20
Contacts	32
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum access time	100 ns
Other features	BATTERY BACKUP OPERATION
I/O type	COMMON
JESD-30 code	R-PDSO-G32
JESD-609 code	e0
length	18.4 mm
memory density	1048576 bi
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP32,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum standby current	0.002 A
Minimum standby current	4.5 V
Maximum slew rate	0.07 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
width	8 mm
Base Number Matches	1

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