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1N855

Description
Rectifier Diode, 1 Element, 0.2A, 900V V(RRM), Silicon, GLASS, SMILAR TO DO-7, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size57KB,1 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

1N855 Overview

Rectifier Diode, 1 Element, 0.2A, 900V V(RRM), Silicon, GLASS, SMILAR TO DO-7, 2 PIN

1N855 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeDO-7
package instructionGLASS, SMILAR TO DO-7, 2 PIN
Contacts2
Reach Compliance Code_compli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.6 V
JESD-30 codeO-LALF-W2
JESD-609 codee0
Maximum non-repetitive peak forward current2 A
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current0.2 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.4 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage900 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
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Tel: (631) 435-1110 • Fax: (631) 435-1824
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