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DL1200

Description
0.025 A, 12000 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size40KB,2 Pages
ManufacturerETC
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DL1200 Overview

0.025 A, 12000 V, SILICON, SIGNAL DIODE

DL 300 DL1200
FAST RECOVERY HIGH VOLTAGE 25mA
MINIATURE SILICON RECTIFIERS
SMALL SIZE MOLDED PACKAGE
PRV 3,000 TO 12,000 VOLTS
1.0 INCH MIN. LEADS
LOW LEAKAGE
EDI
Type
DL300
DL500
DL800
DL1000
DL1200
PRV
Volts
3,000
5,000
8,000
10,000
12,000
ELECTRICAL CHARACTERISTICS (at T
A
=25
o
C Unless Otherwise Specified)
Average Rectified Forward Current @ 50 C, I
O
Max. Peak Surge Current, I
FSM
(8.3ms)
o
25 mA
3 Amp
Max. Reverse Recovery T
rr
(Fig.4)
Max. Forward Voltage Drop @25 m
A,
V
F
Max. DC Reverse Current @ PRV and 25 C, I
R
Max. DC Reverse Current @ PRV and 100 C, I
R
Ambient Operating Temperature Range, T
A
Storage Temperature Range, T
STG
NOTES:
o
o
150nanosec
26Volts
1
25
o
A
A
o
-55 C to +125 C
-55 C to +150 C
o
o
1.It is recommended that a proper heat sink be used on the terminals of this device between the body and
soldering point to prevent damage from excess heat.
2.If operated over 10,000v/inch in length, devices should be immersed in oil or ree - ncapsulated.
EDI reserves the right to change these specifications at any time without notice.

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DL1200 DL300 DL800 DL500
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