RN1507~RN1509
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1507,RN1508,RN1509
Unit: mm
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l
Including two devices in SMV
(super mini type with 5 leads)With built-in bias resistors
l
Simplify circuit design
l
Reduce a quantity of parts and manufacturing process
l
Complementary to RN2507~RN2509
Equivalent Circuit and Bias Resister Values
Type No.
RN1907
RN1908
RN1909
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
JEDEC
EIAJ
TOSHIBA
Weight: 0.014g
―
―
2-3L1A
Equivalent Circuit
(Top View)
Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
°
Characteristic
Collector-base voltage
Collector-emitter voltage
RN1507~1509
RN1507
Emitter-base voltage
RN1508
RN1509
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1507~1509
I
C
P
C
*
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
50
50
6
7
15
100
300
150
−55~150
mA
mW
°C
°C
V
Unit
V
V
*
: Total rating
1
2001-06-07
RN1507~RN1509
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
°
Characteristic
Collector cut-off
current
RN1507~1509
RN1507
Emitter cut-off current
RN1508
RN1509
RN1507
DC current gain
RN1508
RN1509
Collector-emitter
saturation voltage
RN1507~1509
RN1507
Input voltage (ON)
RN1508
RN1509
RN1507
Input voltage (OFF)
RN1508
RN1509
Transition frequency
Collector Output
capacitance
RN1507~1509
RN1507~1509
RN1507
Input resistor
RN1508
RN1509
RN1507
Resistor ratio
RN1508
RN1509
R1/R2
―
R1
―
f
T
C
ob
―
―
V
CE
= 10V, I
C
= 5mA
V
CB
= 10V, I
E
= 0,
f = 1MHz
V
I (OFF)
―
V
CE
= 5V, I
C
= 0.1mA
V
I (ON)
―
V
CE
= 0.2V, I
C
= 5mA
V
CE (sat)
―
I
C
= 5mA, I
B
= 0.25mA
h
FE
―
V
CE
= 5V, I
C
= 10mA
I
EBO
―
Symbol
I
CBO
I
CEO
Test
Circuit
―
Test Condition
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
V
EB
= 6V, I
C
= 0
V
EB
= 7V, I
C
= 0
V
EB
= 15V, I
C
= 0
Min
―
―
0.081
0.078
0.167
80
80
70
―
0.7
1.0
2.2
0.5
0.6
1.5
―
―
7
15.4
32.9
0.191
0.421
1.92
Typ.
―
―
―
―
―
―
―
―
0.1
―
―
―
―
―
―
250
3
10
22
47
0.213
0.468
2.14
Max
100
500
0.15
0.145
0.311
―
―
―
0.3
1.8
2.6
5.8
1.0
1.16
2.6
―
6
13
28.6
61.1
0.232
0.515
2.35
kΩ
MHz
pF
V
V
V
mA
Unit
nA
nA
2
2001-06-07