APM2023N
N-Channel Enhancement Mode MOSFET
Features
•
•
•
•
20V/12.8A , R
DS(ON)
=20mΩ(typ.) @ V
GS
=4.5V
R
DS(ON)
=29mΩ(typ.) @ V
GS
=2.5V
Super High Dense Cell Design for Extremely
Low R
DS(ON)
Reliable and Rugged
TO-252 Package
Pin Description
1
2
3
G
D
S
Applications
•
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Top View of TO-252
D
G
Ordering and Marking Information
APM2023N
Handling Code
Temp. Range
Package Code
S
N-Channel MOSFET
Package Code
U : TO-252
Operation Junction Temp. Range
C :-55 to 150
°
C
Handling Code
TR : Tape & Reel
APM2023N U :
APM2023N
XXXXX
XXXXX - Date Code
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D*
I
DM
Drain-Source Voltage
Gate-Source Voltage
Parameter
(T
A
= 25°C unless otherwise noted)
Rating
20
±12
12.8
50
A
V
Unit
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
* Surface Mounted on FR4 Board, t
≤
10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Dec., 2002
1
www.anpec.com.tw
APM2023N
Absolute Maximum Ratings (Cont.)
Symbol
P
D
T
J
T
STG
R
θjA
Parameter
T
A
=25°C
Maximum Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance – Junction to Ambient
T
A
=100°C
(T
A
= 25°C unless otherwise noted)
Rating
50
W
10
150
-55 to 150
50
°C
°C
°C/W
Unit
Electrical Characteristics
Symbol
Static
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
a
V
SD
a
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
Diode Forward Voltage
Parameter
(T
A
= 25°C unless otherwise noted)
APM2023N
Min.
Typ.
Max.
Test Condition
Unit
V
GS
=0V , I
DS
=250
µ
A
V
DS
=16V , V
GS
=0V
V
DS
=V
GS
, I
DS
=250
µ
A
V
GS
=
±
12V , V
DS
=0V
V
GS
=4.5V , I
DS
=12.8A
V
GS
=2.5V , I
DS
=6.6A
I
SD
=1.7A , V
GS
=0V
V
DS
=10V , I
DS
= 6A
V
GS
=4.5V ,
18
1
0.5
0.7
20
29
0.8
15
5.4
3
25
47
42
120
65
1
±
100
23
35
1.1
18
V
µ
A
V
nA
m
Ω
V
Dynamic
b
Q
g
Total Gate Charge
Q
gs
Q
gd
t
d(ON)
T
r
t
d(OFF)
T
f
C
iss
C
oss
C
rss
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
nC
V
DD
=10V , I
DS
=1A ,
V
GEN
=4.5V , R
G
=0.2
Ω
V
GS
=0V
V
DS
=15V
21
65
35
780
165
105
ns
pF
Reverse Transfer Capacitance Frequency=1.0MHz
Notes
a
b
: Pulse test ; pulse width
≤300µs,
duty cycle
≤
2%
: Guaranteed by design, not subject to production testing
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Dec., 2002
2
www.anpec.com.tw
APM2023N
Typical Characteristics
Output Characteristics
50
45
30
25
Transfer Characteristics
I
D
-Drain Current (A)
35
30
25
20
15
10
5
0
0
1
2
3
4
5
6
7
8
9
10
V
GS
=2V
I
D-
Drain Current (A)
40
V
GS
=3,4,5,6,7,8,9,10V
20
15
T
J
=125°C
10
T
J
=25°C
5
0
0.0
T
J
=-55°C
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
I
DS
=250uA
On-Resistance vs. Drain Current
0.050
V
GS(th)-
Threshold Voltage (V)
(Normalized)
1.25
1.00
0.75
0.50
0.25
0.00
-50
R
DS(ON)
-On-Resistance (Ω)
0.045
0.040
0.035
0.030
0.025
0.020
0.015
V
GS
=4.5V
V
GS
=2.5V
-25
0
25
50
75
100 125 150
0.010
0
5
10
15
20
25
30
Tj - Junction Temperature (°C)
I
D
- Drain Current (A)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Dec., 2002
3
www.anpec.com.tw
APM2023N
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
0.10
I
D
=6.6A
On-Resistance vs. Junction Temperature
2.00
V
GS
=4.5V
ID
=12.8A
R
DS(ON)
-On-Resistance (Ω)
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0
1
2
3
4
5
6
7
8
9
10
R
DS(ON)
-On-Resistance (Ω)
(Normalized)
0.09
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
-50
-25
0
25
50
75
100 125 150
V
GS
- Gate-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
Gate Charge
10
1200
V
DS
=10V
I
D
=6A
Capacitance
Frequency=1MHz
V
GS
-Gate-Source Voltage (V)
8
1000
Capacitance (pF)
800
600
400
200
Ciss
6
4
2
Coss
Crss
0
0
5
10
15
20
25
0
0
4
8
12
16
20
Q
G
- Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Dec., 2002
4
www.anpec.com.tw
APM2023N
Typical Characteristics
Source-Drain Diode Forward Voltage
30
Single Pulse Power
80
10
I
S
-Source Current (A)
60
T
J
=150°C
T
J
=25°C
Power (W)
40
1
20
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0
0.01
0.1
1
10
30
V
SD
-Source-to-Drain Voltage (V)
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
1.Duty Cycle, D=t1/t2
2.Per Unit Base=R
thJA
=50°C/W
3.T
JM
-T
A
=P
DM
Z
thJA
SINGLE PULSE
D=0.02
0.01
1E-4
1E-3
0.01
0.1
1
10
30
Square Wave Pulse Duration (sec)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Dec., 2002
5
www.anpec.com.tw
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