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41HF10M

Description
40 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
CategoryDiscrete semiconductor    diode   
File Size128KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

41HF10M Overview

40 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB

41HF10M Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeDO-5
package instructionO-MUPM-H1
Contacts1
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeDO-203AB
JESD-30 codeO-MUPM-H1
JESD-609 codee0
Maximum non-repetitive peak forward current595 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature190 °C
Minimum operating temperature-65 °C
Maximum output current40 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
surface mountNO
Terminal surfaceTIN LEAD
Terminal formHIGH CURRENT CABLE
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Bulletin I20201 rev. C 03/04
40HF(R) SERIES
STANDARD RECOVERY DIODES
Stud Version
Features
High surge current capability
Stud cathode and stud anode version
Leaded version available
Types up to 1600V V
RRM
40 A
Typical Applications
Battery charges
Converters
Power supplies
Machine tool controls
Welding
Major Ratings and Characteristics
40HF(R)
Parameters
I
F(AV)
@ T
C
I
F(RMS)
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
RRM
T
J
range
range
100 to 1200
- 65 to 190
10 to 120
40
140
62
570
595
1600
1450
140, 160
40
110
Units
A
°C
A
A
A
A
2
s
A
2
s
1400, 1600
- 65 to 160
V
°C
case style
DO-203AB (DO-5)
www.irf.com
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