Bulletin I27148 08/06
EMP50P12B
PIM+
EMP Features:
Power Module:
•
•
NPT IGBTs 50A, 1200V
10us Short Circuit capability
Square RBSOA
Low Vce
(on)
(2.15Vtyp @ 50A, 25°C)
Positive Vce
(on)
temperature coefficient
Gen III HexFred Technology
Low diode V
F
(1.78Vtyp @ 50A, 25°C)
Soft reverse recovery
EMP – Inverter (EconoPack 2 outline compatible)
2mΩ sensing resistors on all phase outputs and DCbus
minus rail
T/C < 50ppm/°C
Power Module schematic:
Package:
•
•
Description
The EMP50P12B is a Power Integrated Module for Motor
Driver applications with embedded sensing resistors on all
three-phase output currents.
Each sensing resistor’s head is directly bonded to an external
pin to reduce parasitic effects and achieve high accuracy on
feedback voltages.
Since their thermal coefficient is very low, no value
compensation is required across the complete operating
temperature range.
The device comes in the EMP package, fully compatible in
length, width and height with EconoPack 2 outline.
TM
Three phase inverter with current sensing
resistors on all output phases
Power module frame pins mapping
www.irf.com
1
EMP50P12B
I27148 08/06
Pins mapping
Symbol
DC IN+
DC IN-
DC +
DC -
Th +
Th -
Sh +
Sh -
G1/2/3
E1/2/3
R1/2/3 +
R1/2/3 -
G4/5/6
E4/5/6
OUT1/2/3
Lead Description
DC Bus plus power input pin
DC Bus minus power input pin
DC Bus plus signal connection (Kelvin point)
DC Bus minus signal connection (Kelvin point)
Thermal sensor positive input
Thermal sensor negative input
DC Bus minus series shunt positive input (Kelvin point)
DC Bus minus series shunt negative input (Kelvin point)
Gate connections for high side IGBTs
Emitter connections for high side IGBTs (Kelvin points)
Output current sensing resistor positive input (IGBTs emitters 1/2/3 side, Kelvin points)
Output current sensing resistor negative input (Motor side, Kelvin points)
Gate connections for low side IGBTs
Emitter connections for low side IGBTs (Kelvin points)
Three phase power output pins
Absolute Maximum Ratings (T
C
=25ºC)
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
All voltage parameters are absolute voltages referenced to V
DC-
, all currents are defined positive into any lead.
Thermal Resistance and Power Dissipation ratings are measured at still air conditions.
Symbol
V
DC
V
CES
I
C @ 100C
I
C @ 25C
I
CM
Inverter
I
F @ 100C
I
F @ 25C
I
FM
V
GE
P
D @ 25°C
P
D @ 100°C
MT
Power
Module
T
J
T
STG
Vc-iso
DC Bus Voltage
Collector Emitter Voltage
IGBTs continuous collector current (T
C
= 100 ºC)
IGBTs continuous collector current (T
C
= 25 ºC)
Pulsed Collector Current (Fig. 3, Fig. CT.5)
Diode Continuous Forward Current (T
C
= 100 ºC)
Diode Continuous Forward Current (T
C
= 25 ºC)
Diode Maximum Forward Current
Gate to Emitter Voltage
Power Dissipation (One transistor)
Power Dissipation (One transistor, T
C
= 100 ºC)
Mounting Torque
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage to Base Copper Plate
-40
-40
-2500
-20
Parameter Definition
Min.
0
0
Max.
1000
1200
50
100
200
50
100
200
+20
354
142
3.5
+150
+125
+2500
V
W
Nm
ºC
V
A
Units
V
www.irf.com
2
EMP50P12B
I27148 08/06
Electrical Characteristics:
For proper operation the device should be used within the recommended conditions.
T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)CES
∆V
(BR)CES /
∆
T
Parameter Definition
Collector To Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Min.
1200
+1.2
2.15
V
CE(on)
Collector To Emitter Saturation Voltage
2.70
2.45
V
GE(th)
∆V
GE(th) /
∆
Tj
g
fe
Gate Threshold Voltage
Temp. Coeff. of Threshold Voltage
Forward Trasconductance
29
4.4
4.7
-1.2
33
38
500
I
CES
Zero Gate Voltage Collector Current
650
1350
4000
V
FM
I
RM
I
GES
R1/2/3
Rsh
Diode Forward Voltage Drop
Diode Reverse Leakage Current
Gate To Emitter Leakage Current
Sensing Resistors
DC bus minus series shunt resistor
1.98
1.98
2
2
1.78
1.90
2.1
2.22
20
±200
2.02
2.02
V
µA
nA
mΩ
µA
2.55
3.78
3.22
5.5
V
mV/ºC
S
V
Typ.
Max.
Units
V
V/ºC
Test Conditions
V
GE
= 0V, I
C
= 250µA
V
GE
= 0V, I
C
= 1mA (25 - 125 ºC)
I
C
= 50A, V
GE
= 15V
I
C
= 100A, V
GE
= 15V
I
C
= 50A, V
GE
= 15V, T
J
= 125 ºC
V
CE
= V
GE
, I
C
= 250µA
V
CE
= V
GE
, I
C
= 1mA (25 - 125 ºC)
V
CE
= 50V, I
C
= 50A, PW = 80µs
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 1200V, T
J
= 125 ºC
V
GE
= 0V, V
CE
= 1200V, T
J
= 150 ºC
I
C
= 50A
I
C
= 50A, T
J
= 125 ºC
V
R
= 1200V, T
J
= 25 ºC
V
GE
= 20V
8
8
5, 6
7, 9
10, 11
12
Fig.
General Description
The EMP module contains six IGBTs and HexFreds
Diodes in a standard inverter configuration. IGBTs used
are the new NPT 1200V-50A (current rating measured at
100C°), generation V from International Rectifier; the
HexFred diodes have been designed specifically as pair
elements for these power transistors. Thanks to the new
design and technological realization, these devices do not
need any negative gate voltage for their complete turn off;
moreover the tail effect is also substantially reduced
compared to competitive devices of the same family. This
feature tremendously simplifies the gate driving stage.
Another innovative feature in this type of power modules is
the presence of sensing resistors in the three output
phases, for precise motor current sensing and short circuit
protections, as well as another resistor of the same value
in the DC bus minus line, needed only for device
protections purposes. A complete schematic of the EMP
module is shown on page 1 where all sensing resistors
have been clearly evidenced, a thermal sensor with
negative temperature coefficient is also embedded in the
device structure.
The package chosen is mechanically compatible with the
well known EconoPack outline, Also the height of the
plastic cylindrical nuts for the external PCB positioned on
its top is the same as the EconoPack II, so that, with the
only re-layout of the main motherboard, this module can fit
into the same mechanical fixings of the standard
EconoPack II package thus speeding up the device
evaluation in an already existing driver. An important
feature of this new device is the presence of Kelvin
connections for all feedback and command signals
between the board and the module with the advantage of
having all emitter and resistor sensing independent from
the main power path. The final benefit is that all low power
signal from/to the controlling board are unaffected by
parasitic inductances or resistances inevitably present in
the module power layout. The new package outline is
shown on bottom of page 1. Notice that because of high
current spikes on those inputs the DC bus power pins are
doubled in size compared to the other power pins. Module
technology uses the standard and well know DBC (Direct
Bondable Copper): over a thick Copper base an allumina
(Al
2
O
3
) substrate with a 300µm copper foil on both side is
placed and IGBTs and Diodes dies are directly soldered,
through screen printing process. These dies are then
bonded with a 15 mils aluminum wire for power and signal
connections. All components are then completely covered
by a silicone gel for mechanical protection and electrical
isolation purposes.
www.irf.com
3
EMP50P12B
I27148 08/06
Switching Characteristics:
For proper operation the device should be used within the recommended conditions.
T
J
= 25°C (unless otherwise specified)
Symbol
Q
g
Q
ge
Q
gc
E
on
E
off
E
tot
E
on
E
off
E
tot
td (on)
Tr
td (off)
Tf
C
ies
C
oes
C
res
RBSOA
Parameter Definition
Total Gate Charge (turn off)
Gate – Emitter Charge (turn off)
Gate – Collector Charge (turn off)
Turn on Switching Loss
Turn off Switching Loss
Total Switching Loss
Turn on Switching Loss
Turn off Switching Loss
Total Switching Loss
Turn on delay time
Rise time
Turn off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Min
Typ
400
46
181
2814
5293
8107
3963
7810
11773
66
72
593
95
5884
950
167
FULL SQUARE
Max
411
55
200
3220
5825
9145
4415
8965
13380
72
83
641
117
6052
968
193
pF
ns
V
GE
= 15V, R
G
=10Ω, L = 250µH
V
CC
= 30V
V
GE
= 0V
f = 1MHz
T
J
= 150 ºC, I
C
=200A, V
GE
= 15V to 0V
V
CC
= 1000V, V
p
= 1200V, R
G
= 5Ω
µs
1114
260
42
1535
363
43
0.35
0.70
0.03
100
Pdiss
Total Dissipated Power
150
250
200
W
µJ
ns
A
ºC/W
ºC/W
ºC/W
I
C
= 7A, V
DC
= 530V, fsw = 8kHz, T
C
= 55 ºC
I
C
= 10A, V
DC
= 530V, fsw = 8kHz, T
C
= 55 ºC
I
C
= 10A, V
DC
= 530V, fsw = 16kHz T
C
= 55 ºC,
I
C
= 20A, V
DC
= 530V, fsw = 4kHz, T
C
= 40ºC
PD1
PD2
PD3
See also fig.24 and 25
24,25
T
J
= 150 ºC, V
GE
= 15V to 0V
V
CC
= 900V, Vp= 1200V, R
G
= 5Ω
T
J
= 125 ºC
I
F
= 50A, V
CC
= 600V,
V
GE
= 15V, R
G
=10Ω, L = 250µH
4
CT2
CT3
WF4
17,18
19,20
21
CT4
WF3
22
µJ
µJ
nC
Units
I
C
= 50A
V
CC
= 600V
V
GE
= 15V
I
C
= 50A, V
CC
= 600V, T
J
= 25 ºC
V
GE
= 15V, R
G
=10Ω, L = 250µH
Tail and Diode Rev. Recovery included
I
C
= 50A, V
CC
= 600V, T
J
= 125 ºC
V
GE
= 15V, R
G
=10Ω, L = 250µH
Tail and Diode Rev. Recovery included
I
C
= 50A, V
CC
= 600V, T
J
= 125 ºC
CT4
WF1
WF2
13,
15
CT4
WF1
WF2
14,16
CT4
WF1
WF2
Test Conditions
Fig.
23
CT1
SCSOA
E
REC
trr
Irr
Rth
JC_T
Rth
JC_D
Rth
C-H
Short Circuit Safe Operating Area
Diode reverse recovery energy
Diode reverse recovery time
Peak reverse recovery current
Each IGBT to copper plate thermal resistance
Each Diode to copper plate thermal resistance
Module copper plate to heat sink thermal
resistance. Silicon grease applied = 0.1mm
10
693
156
35
www.irf.com
4
EMP50P12B
I27148 08/06
Fig. 1 – Maximum DC collector
Current vs. case temperature
Fig. 2 – Power Dissipation vs.
Case Temperature
T
C
= (ºC)
Fig. 3 – Forward SOA
T
C
= 25ºC; Tj
≤
150ºC
T
C
= (ºC)
Fig. 4 – Reverse Bias SOA
Tj = 150ºC, V
GE
= 15V
V
CE
= (V)
V
CE
= (V)
www.irf.com
5
PCB Design
京公网安备 11010802033920号
EEWORLD
