CSPEMI400G
SIM Card EMI Filter Array
with ESD Protection
Product Description
The CSPEMI400G is an EMI filter array with ESD protection,
which integrates three pi filters (C−R−C) and two additional channels
of ESD protection. The CSPEMI400G has component values of 20 pF
−
47
W
−
20 pF, and 20 pF
−
100
W
−
20 pF. The parts include
avalanche−type ESD diodes on every pin, which provide a very high
level of protection for sensitive electronic components that may be
subjected to electrostatic discharge (ESD). The ESD diodes connected
to the filter ports safely dissipate ESD strikes of
±10
kV, exceeding the
maximum requirement of the IEC 61000−4−2 international standard.
Using the MIL−STD−883 (Method 3015) specification for Human
Body Model (HBM) ESD, the pins are protected for contact
discharges at greater than
±25
kV.
The ESD diodes on pins A4 and C4 ports are designed and
characterized to safely dissipate ESD strikes of
±10
kV, well beyond
the maximum requirement of the IEC 61000−4−2 international
standard.
This device is particularly well suited for portable electronics (e.g.
mobile handsets, PDAs, notebook computers) because of its small
package format and easy−to−use pin assignments. In particular, the
CSPEMI400G is ideal for EMI filtering and protecting data lines from
ESD for the SIM card slot in mobile handsets.
The CSPEMI400G is available in a space−saving, low−profile Chip
Scale Package with lead−free finishing.
Features
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WLCSP10
CASE 567BL
MARKING DIAGRAM
+
AG
AG
= CSPEMI400G
ORDERING INFORMATION
Device
CSPEMI400G
Package
CSP−10
(Pb−Free)
Shipping
†
3500/Tape & Reel
•
•
•
•
•
•
Three Channels of EMI Filtering, each with ESD Protection
Two Additional Channels of ESD−Only Protection
±10
kV ESD Protection (IEC 61000−4−2, Contact Discharge)
±25
kV ESD Protection (HBM)
Greater than 30 dB of Attenuation at 1 GHz
10−Bump, 1.960 mm x 1.330 mm Footprint Chip Scale Package
(CSP)
•
These Devices are Pb−Free and are RoHS Compliant
Applications
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
•
SIM Card Slot in Mobile Handsets
•
I/O Port Protection for Mobile Handsets, Notebook Computers,
PDAs, etc.
•
EMI Filtering for Data Ports in Cell Phones, PDAs or Notebook
Computers
©
Semiconductor Components Industries, LLC, 2012
January, 2012
−
Rev. 4
1
Publication Order Number:
CSPEMI400/D
CSPEMI400G
ELECTRICAL SCHEMATIC
R
1
A1
C
C
GND
R
1
A3
C
C
C3
A4
C
C
C5
C1
A2
C
C
R
2
C2
B1,B2
R
1
= 100
W
R
2
= 47
W
Table 1. PIN DESCRIPTIONS
Type
EMI
Filter
Pin
A1
C1
EMI
Filter
A2
C2
Device
Ground
EMI
Filter
ESD
Channel
ESD
Channel
B1
B2
A3
C3
A4
C4
Description
EMI Filter with ESD Protection for RST
Signal
EMI Filter with ESD Protection for RST
Signal
EMI Filter with ESD Protection for CLK
Signal
EMI Filter with ESD Protection for CLK
Signal
Device Ground
Device Ground
DAT EMI Filter with ESD Protection
DAT EMI Filter with ESD Protection
ESD Protection Channel
−
V
CC
Supply
ESD Protection Channel
PACKAGE / PINOUT DIAGRAMS
Orientation
Marking
(see Note)
A
B
C
Bottom View
(Bumps Up View)
C1
A1
A1
C2
B1
A2
C3 C4
B2
A3
A4
Top View
(Bumps Down View)
4
1
2
3
+
AG
Orientation
Marking
CSPEMI400G
CSP Package
Note: Lead−free devices are specified by using a “+” character
for the top side orientation mark.
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Temperature Range
DC Power per Resistor
DC Package Power Rating
Rating
−65
to +150
100
300
Units
°C
mW
mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Rating
−40
to +85
Units
°C
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2
CSPEMI400G
Table 4. ELECTRICAL OPERATING CHARACTERISTICS
(Note 1)
Symbol
R
1
R
2
C
V
STANDOFF
I
LEAK
V
SIG
Resistance of R
1
Resistance of R
2
Capacitance
Stand−off Voltage
Diode Leakage Current
Signal Voltage
Positive Clamp
Negative Clamp
In−system ESD Withstand Voltage
a) Human Body Model, MIL−STD−883, Method 3015
b) Contact Discharge per IEC 61000−4−2
Clamping Voltage during ESD Discharge
MIL−STD−883 (Method 3015), 8 kV
Positive Transients
Negative Transients
Cut−off frequency
Z
SOURCE
= 50
W,
Z
LOAD
= 50
W
Cut−off frequency
Z
SOURCE
= 50
W,
Z
LOAD
= 50
W
V
IN
= 2.5 VDC, 1 MHz,
30 mV ac
I = 10
mA
V
BIAS
= 3.3 V
I
LOAD
= 10 mA
I
LOAD
=
−10
mA
(Notes 2 and 4)
5.6
−1.5
±25
±10
6.8
−0.8
Parameter
Conditions
Min
80
38
16
Typ
100
47
20
6.0
300
9.0
−0.4
Max
120
56
24
Units
W
W
pF
V
nA
V
V
ESD
kV
V
CL
(Notes 2, 3 and 4)
+12
−7
R = 100
W,
C = 20 pF
R = 47
W,
C = 20 pF
77
85
V
f
C1
f
C2
MHz
MHz
1. T
A
= 25
°
C unless otherwise specified.
2. ESD applied to input and output pins with respect to GND, one at a time.
3. Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin A1, then clamping
voltage is measured at Pin C1.
4. Unused pins are left open.
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