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HER207G-TB

Description
2 A, 800 V, SILICON, RECTIFIER DIODE, DO-15
CategoryDiscrete semiconductor    diode   
File Size47KB,4 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
Download Datasheet Parametric View All

HER207G-TB Overview

2 A, 800 V, SILICON, RECTIFIER DIODE, DO-15

HER207G-TB Parametric

Parameter NameAttribute value
MakerWon-Top Electronics Co., Ltd.
Parts packaging codeDO-15
package instructionPLASTIC PACKAGE-2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationULTRA FAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-15
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current60 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage800 V
Maximum reverse recovery time0.075 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
WTE
POWER SEMICONDUCTORS
HER201G – HER208G
Pb
2.0A GLASS PASSIVATED ULTRAFAST DIODE
Features
!
!
!
!
!
Glass Passivated Die Construction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
A
B
A
Mechanical Data
!
!
!
!
!
!
!
Case: DO-15, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.40 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
DO-15
Dim
Min
Max
25.4
A
5.50
7.62
B
0.71
0.864
C
2.60
3.60
D
All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
HER
201G
50
35
HER
202G
100
70
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
A
= 55°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
@I
F
= 2.0A
@T
A
= 25°C
@T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
HER
203G
200
140
HER
204G
300
210
HER
205G
400
280
HER
206G
600
420
HER
207G
800
560
HER
208G
1000
700
Unit
V
V
A
2.0
I
FSM
V
FM
I
RM
t
rr
C
j
T
j
T
STG
50
60
1.0
60
1.3
5.0
100
75
40
-65 to +150
-65 to +150
1.7
A
V
µA
nS
pF
°C
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
HER201G – HER208G
1 of 4
© 2006 Won-Top Electronics
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