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MX1N5807U4

Description
Rectifier Diode, 1 Phase, 1 Element, 6A, 50V V(RRM), Silicon, CERAMIC PACKAGE-3
CategoryDiscrete semiconductor    diode   
File Size269KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

MX1N5807U4 Overview

Rectifier Diode, 1 Phase, 1 Element, 6A, 50V V(RRM), Silicon, CERAMIC PACKAGE-3

MX1N5807U4 Parametric

Parameter NameAttribute value
package instructionR-CBCC-N3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-CBCC-N3
JESD-609 codee4
Maximum non-repetitive peak forward current125 A
Number of components1
Phase1
Number of terminals3
Maximum output current6 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Certification statusNot Qualified
Maximum repetitive peak reverse voltage50 V
surface mountYES
Terminal surfaceGOLD
Terminal formNO LEAD
Terminal locationBOTTOM
Base Number Matches1
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY POWER RECTIFIER
125 Amps Surge Rating
Ceramic Surface Mount (U4 Style)
DEVICES
LEVELS
1N5807U4
1N5809U4
1N5811U4
MX
MV
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Peak Repetitive
1N5807U4
1N5807U4M
Reverse Voltage
1N5809U4
1N5809U4M
1N5811U4
1N5811U4M
Average Forward Current, Te
C
= 75°
Peak Surge Forward Current @ t
p
= 8.3ms, half sine
T
C
= 25°C, T = 1/120s
Thermal Resistance, Junction to Case
Operating Case Temperature Range
Storage Temperature Range
Symbol
Value
50
100
150
6
125
6.5
-65°C to 175°C
-65°C to 175°C
Unit
V
RWM
V
I
F
I
FSM
R
θjc
T
C
T
stg
A
A
°C/W
°C
°C
U4
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
Forward Voltage
I
F
= 3A, T
A
= 25°C*
I
F
= 4A, T
A
= 25°C*
I
F
= 6A, T
A
= 25°C*
Reverse Current
V
R
= 50, T
A
= 25°C
V
R
= 100, T
A
= 25°C
V
R
= 150, T
A
= 25°C
Reverse Current
V
R
= 50, T
A
= 125°C
V
R
= 100, T
A
= 125°C
V
R
= 150, T
A
= 125°C
1N5807U4
1N5809U4
1N5811U4
1N5807U4
1N5809U4
1N5811U4
1N5807U4M
1N5809U4M
1N5811U4M
1N5807U4M
1N5809U4M
1N5811U4M
Symbol
Min.
Max.
.865
.875
.925
Unit
V
F
V
I
R
5
μA
U4M
I
R
525
μA
Reverse Recovery Time
I
F
= I
RM
= 1.0A
1N5807U4
i
(REC)
= 0.1A
1N5809U4
di/dt = 100A/us (min)
1N5811U4
1N5807U4M
1N5809U4M
1N5811U4M
Trr
525
μA
* Pulse test: Pulse width 300 µsec, Duty cycle 2%
Note:
T4-LDS-0147 Rev. 1 (091865)
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