X5R Dielectric
C0G (NP0) Dielectric
Parameter/Test
Operating Temperature Range
Operating Temperature Range
Capacitance
Capacitance
Q
Dissipation Factor
Insulation Resistance
Insulation Resistance
Dielectric Strength
Appearance
Appearance
Parameter/Test
Specifications and Test Methods
Specifications and Test Methods
NP0
-55ºC to +85ºC
Limits
Specification
-55ºC to +125ºC
Within specified tolerance
Within specified tolerance
≤ 2.5% for ≥ 50V DC rating
<30 pF: Q≥ 400+20 x Cap Value
≤ 12.5% for 25V, 35V DC rating
≥30 pF: Q≥ 1000
≤ 12.5% Max. for 16V DC rating and lower
100,000MΩ or 1000MΩ - µF,
Contact Factory for DF by PN
whichever is less
10,000MΩ or 500MΩ - µF,
whichever is less
No breakdown or visual defects
X5R Specification Limits
Dielectric Strength
No breakdown or visual defects
No defects
No defects
Resistance to
to
Resistance
Flexure
Flexure
Stresses
Stresses
Capacitance
Capacitance
Variation
Variation
Dissipation
Q
Factor
±5% or ±.5
≤ ±12%
pF, whichever is greater
Meets Initial Values (As Above)
Meets Initial Values (As Above)
≥ Initial Value
0.3
≥ Initial Value x
x 0.3
≥ 95% of each terminal should be covered
with fresh solder
with fresh solder
≤ ±7.5%
Temperature Cycle Chamber
Freq.: 1.0 MHz ± 10%
± 10%
≤ 1000 pF
Freq.: 1.0 kHz
for cap
1.0 kHz ± 10% for cap
.2V
Voltage: 1.0Vrms ±
> 1000 pF
Voltage:
0.5Vrms
.2V
For Cap > 10 µF,
1.0Vrms ±
@ 120Hz
Charge device with rated voltage for
60 ± 5 secs @ room temp/humidity
Charge device with rated voltage for
for
Charge device with 250% of rated voltage
120 ± 5 secs @ room temp/humidity
1-5 seconds, w/charge and discharge current
Charge device
limited to 50 mA (max)
with 250% of rated voltage for
1-5 seconds, w/charge and discharge
rated
Note: Charge device with 150% of
current
limited to
for 500V
(max)
voltage
50 mA
devices.
Deflection: 2mm
Deflection: 2mm
Test Time: 30 seconds
Test Time: 30 seconds
Measuring Conditions
Temperature Cycle Chamber
Measuring Conditions
Insulation
Resistance
Resistance
Insulation
Solderability
Solderability
≥ 95% of each terminal should be covered
Resistance to
Resistance to
Solder Heat
Solder Heat
Capacitance
Variation
Variation
Appearance
Capacitance
Appearance
No defects, <25% leaching of either end terminal
No defects, <25% leaching of either end terminal
≤ ±2.5% or ±.25 pF, whichever is greater
Meets Initial Values (As Above)
Meets Initial Values (As Above)
Meets Initial Values (As Above)
No visual defects
Dip device in eutectic solder at 230 ± 5ºC
for 5.0 ± 0.5 seconds
for 5.0 ± 0.5 seconds
Dip device in eutectic solder at 230 ± 5ºC
Resistance
Insulation
Dielectric
Resistance
Dissipation
Insulation
Factor
Q
Meets Initial Values (As Above)
Meets Initial Values (As Above)
Dip device in eutectic
room temperature
for
24 ± 2
seconds. Store at
solder at 260ºC
for
60sec-
onds.
hours before measuring electrical
24 ± 2hours
Store at room temperature for
properties.
before measuring electrical properties.
Dip device in eutectic solder at 260ºC for 60
Strength
Dielectric
Appearance
Strength
Meets Initial Values (As Above)
Step 1: -55ºC ± 2º
Step
1: -55ºC ± 2º
Step
2: Room Temp
Step 2: Room Temp
Appearance
Thermal
Shock
Thermal
Shock
Capacitance
Q
Variation
Capacitance
Variation
30 ± 3 minutes
≤ 3 minutes
30 ± 3 minutes
30 ± 3 minutes
≤ 3 minutes
30 ± 3 minutes
≤ 3 minutes
≤ ±2.5%
No
±.25 pF,
defects
is greater
or
visual
whichever
Meets Initial Values (As Above)
Meets Initial Values (As Above)
≤ ±7.5%
Step 3: +125ºC ± 2º
Step 4: Room Temp
Insulation
Dielectric
Resistance
Strength
Dissipation
Insulation
Factor
Resistance
Meets Initial Values (As Above)
Step 3: +85ºC ± 2º
Meets Initial Values (As Above)
Meets Initial Values (As Above)
Repeat for 5 cycles
Step 4: Room Temp
and measure
3 minutes
≤
after
24 hours at room temperature
Repeat for 5 cycles and measure after
24 ± 2 hours at room temperature
Load Life
Load Life
Capacitance
Q
Variation
(C=Nominal Cap)
Dissipation
Insulation
Factor
Insulation
Dielectric
Resistance
Strength
Variation
Appearance
Appearance
Dielectric
Capacitance
Strength
≤ ±3.0% or ± .3 pF, whichever is greater
≥ 30 pF:
Q≥ 350
≤
≥10 pF, <30 pF:
±12.5%
+5C/2
Q≥ 275
<10 pF:
Q≥ 200 +10C
No visual defects
No visual defects
Meets Initial Values (As Above)
Charge device with twice rated voltage in
Charge device with 1.5X rated voltage in
test chamber set at 125ºC
1000
test chamber set at 85ºC ± 2ºC for
± 2ºC
hours
for 1000 hours (+48, -0).
(+48, -0).
Note: Contact factory for *optional
Remove from test chamber and stabilize at
specification part numbers that are tested at
room temperature for 24 hours
< 1.5X rated voltage.
before measuring.
Remove from test chamber and stabilize at room
temperature for 24 ± 2 hours
Resistance
≤ Initial Value x 2.0 (See Above)
≥ Initial Value x 0.3 (See Above)
Meets Initial Values (As Above)
No visual defects
≥ Initial Value x 0.3 (See Above)
Meets Initial Values (As Above)
No visual defects
Appearance
Dielectric
Capacitance
Strength
Variation
Appearance
≤ ±5.0% or ± .5 pF, whichever is greater
≥ 30 pF:
Q≥ 350
≤
≥10 pF, <30 pF:
±12.5%
+5C/2
Q≥ 275
<10 pF:
Q≥ 200 +10C
≤ Initial Value x 2.0 (See Above)
Load
Humidity
Load
Humidity
Capacitance
Q
Variation
Dissipation
Insulation
Factor
Resistance
Store in a test chamber set at 85ºC ± 2ºC/
85% ± 5%
chamber set at 85ºC ± 2ºC/
Store in a test
relative humidity for 1000 hours
85% ±
(+48, -0) with
humidity for 1000 hours
5% relative
rated voltage applied.
Remove from chamber and stabilize at
Remove
room temperature for
stabilize at room
from chamber and
24 ± 2 hours
before measuring.
temperature and humidity for
24 ± 2 hours before measuring.
(+48, -0) with rated voltage applied.
≥ Initial Value x 0.3 (See Above)
Insulation
Dielectric
Resistance
Strength
Dielectric
Strength
≥ Initial Value x
Values (As
Above)
Meets Initial
0.3 (See
Above)
Meets Initial Values (As Above)
042418
100917
27
27
5
Microcontroller MCU
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